Journal of Inorganic Materials ›› 2023, Vol. 38 ›› Issue (9): 1005-1016.DOI: 10.15541/jim20230132

Special Issue: 【能源环境】钙钛矿(202310) 【信息功能】神经形态材料与器件(202310)

• REVIEW • Previous Articles     Next Articles

Research Progress of Photoelectric Resistive Switching Mechanism of Halide Perovskite

GUO Huajun1,2(), AN Shuailing2,3, MENG Jie2,3, REN Shuxia3, WANG Wenwen2, LIANG Zishang1,2, SONG Jiayu2,3, CHEN Hengbin2,3, SU Hang2,3, ZHAO Jinjin2()   

  1. 1. School of Mechanical Engineering, Shijiazhuang Tiedao University, Shijiazhuang 050043, China
    2. Hebei Key Laboratory of Inorganic Nano-materials, College of Chemistry and Materials Science, Hebei Normal University, Shijiazhuang 050024, China
    3. School of Materials Science and Engineering, Shijiazhuang Tiedao University, Shijiazhuang 050043, China
  • Received:2023-03-16 Revised:2023-05-23 Published:2023-09-20 Online:2023-06-16
  • Contact: ZHAO Jinjin, professor. E-mail:
  • About author:GUO Huajun (1983-), male, PhD candidate. E-mail:
  • Supported by:
    National Natural Science Foundation of China(U2130128);National Natural Science Foundation of China(11772207);Natural Science Foundation of Hebei Education Department(ZD2020192);Hebei Administration for Market Supervision Science and Technology Project List(2023ZC03);Central Government Guiding Local Science and Technology Development Project(216Z4302G);Innovation Capability Improvement Plan Project of Hebei Province(22567604H);Basic Research Cooperation Special Foundation of Beijing-Tianjin-Hebei Region(H2022205047);Basic Research Cooperation Special Foundation of Beijing-Tianjin-Hebei Region(22JCZXJC00060);Basic Research Cooperation Special Foundation of Beijing-Tianjin-Hebei Region(E3B33911DF);Ph.D Scientific Research Start-up Fund of Hebei Normal University(L2023B18)


As a reversible, non-volatile, and resistive state mutation information storage and processing device, the resistive switching (RS) memory is expected to solve the inherent physical limitations of the traditional memory and von Neumann bottleneck, and has received widespread attention. Taking advantage of rapid carrier migration characteristics and excellent photoelectric conversion performance, halide perovskite optoelectronic RS memory devices present excellent resistive switching performance. In recent years, researches on storage and computing applications of the halide perovskite RS memory developed unprecedentedly; whereas, the working mechanisms of halide perovskite RS memory still remain unclear. This review analyzes the working mechanism of halide perovskite RS memory, compares the regulation characteristics of conduction filaments (CFs) and energy level matching (ELM), summarizes the constraints of various mechanisms, reveals the repeated formation and dissolution of CFs under light illumination and electric field, as well as Schottky barrier between the perovskite transfer layer and other layer, dominates the On/Off ratio, threshold (Set/Reset) voltage and performance stability of halide perovskite optoelectronic RS memory, and prospects the applications of halide perovskite RS memory in artificial intelligence bionic synapses, in-memory computing, and machine vision.

Key words: conductive filament, energy level matching, halide perovskite, in-memory computing, machine vision, review

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