Research Progress of Photoelectric Resistive Switching Mechanism of Halide Perovskite

doi:10.15541/jim20230132

Abstract

Abstract:

As a reversible, non-volatile, and resistive state mutation information storage and processing device, the resistive switching (RS) memory is expected to solve the inherent physical limitations of the traditional memory and von Neumann bottleneck, and has received widespread attention. Taking advantage of rapid carrier migration characteristics and excellent photoelectric conversion performance, halide perovskite optoelectronic RS memory devices present excellent resistive switching performance. In recent years, researches on storage and computing applications of the halide perovskite RS memory developed unprecedentedly; whereas, the working mechanisms of halide perovskite RS memory still remain unclear. This review analyzes the working mechanism of halide perovskite RS memory, compares the regulation characteristics of conduction filaments (CFs) and energy level matching (ELM), summarizes the constraints of various mechanisms, reveals the repeated formation and dissolution of CFs under light illumination and electric field, as well as Schottky barrier between the perovskite transfer layer and other layer, dominates the On/Off ratio, threshold (Set/Reset) voltage and performance stability of halide perovskite optoelectronic RS memory, and prospects the applications of halide perovskite RS memory in artificial intelligence bionic synapses, in-memory computing, and machine vision.

Key words: conductive filament, energy level matching, halide perovskite, in-memory computing, machine vision, review

CLC Number:

TM546

GUO Huajun, AN Shuailing, MENG Jie, REN Shuxia, WANG Wenwen, LIANG Zishang, SONG Jiayu, CHEN Hengbin, SU Hang, ZHAO Jinjin. Research Progress of Photoelectric Resistive Switching Mechanism of Halide Perovskite[J]. Journal of Inorganic Materials, 2023, 38(9): 1005-1016.

Figures/Tables 6

Fig. 1 Schematic diagram of mechanisms and applications of halide perovskite RS devices

Fig. 2 CFs of 3D perovskite RS device[19,27,30⇓-32,37,41-42] (a) Illustration of Au/CsPbBr3/ITO RS device structure[27]; (b) I−V response of Al/CsPbClxBr3−x/ITO/PET RS device in semilogarithmic scale[41]; (c) Alignment of bromide vacancies and silver atoms in On state of ITO/Cs2AgBiBr6/Au RS device[42]; (d) Pb element oxidation and reduction peaks at cyclic voltammetry (CV) curve of Al@MAPbI3/Al; (e) Pb metallic filaments formation in Set process and dissolution in the Reset process[30]; (f) Perovskite thickness-dependent competition between metallic and iodine vacancy CFs of Ag/MAPbI3/FTO RS device[37]; (g) Hybrid filaments formation and dissolution of Ag/CsPbBr3 QDs:GO/ITO device[19]; (h) Intensity of Cu element on switched and unswitched Cu/MA3Bi2I9/ITO devices[31]; (i) Band diagram of Ag/PMMA/CsPbI3/Pt device and thermally activated Ag ions hopping in CsPbI3[32]; (j) Schematic diagram of ITO/Cs2AgBiBr6/Au RS device; (k) Atomic force microscope images of CFs in Off (left) and On (right) states of Fig 2(j); (l) Element distributions of Br and Ag in Off and On states in Fig 2(j)[42]. ITO: Indium-tin oxide; PET: Polyethylene terephthalate; MA: Methylammonium; QDs: Quantum dots; GO: Graphene oxide; PMMA: Poly(methylmethacrylate)

Fig. 3 CFs of 2D halide perovskite RS device[44-45] (a) CFs mechanism of FTO/[(TZ-H)2(PbBr4)]n/Ag device; (b) I-V curve with conduction mechanism in semilogarithmic scale under positive-voltage sweep at 30 ℃ with inset showing schematic illustration of FTO/[(TZ-H)2(PbBr4)]n/Ag device structure; (c) I-V curves of FTO/[(TZ-H)2(PbBr4)]n/Ag device at different temperatures[45]; (d) Ternary resistive switching I-V curves of Al/MA2PbI2 (SCN)2/ITO device; (e) I-V curve with conduction mechanism in semilogarithmic scale with inset showing schematic illustration of Al/MA2PbI2 (SCN)2/ITO device structure; (f) CFs mechanism of Al/MA2PbI2 (SCN)2/ITO device[44]. Colorful figures are available on website

Fig. 4 CFs of perovskite RS device under light illumination[51-52] (a) CFs formation and dissolution of ITO/Ag/MAPbI3 quantum wires/Al device under light illumination[51]; (b) Dynamic bending fatigue I-V curves of mica/AgNWs@AZO/PEDOT:PSS/CsPbBr3 device under light illumination; (c) Three-dimensional tomography images of PEDOT: PSS/CsPbBr3 nanocrystal overlaid by Kelvin-probe force microscopy (KPFM) signals under (c1) dark condition and (c2) light illumination, and statistical variations of (c3) height and (c4) surface potential from Figs. (c1, c2); (d) Hybrid filaments formation and dissolution of mica/AgNWs@AZO/PEDOT:PSS/CsPbBr3 device under light illumination[52]. PEDOT: Poly(3,4-ethylenedioxythiophene); PSS: Poly(styrenesulfonate). Colorful figures are available on website

Fig. 5 Energy level matching of perovskite RS device[60⇓⇓⇓-64] (a) Energy level matching and the formation and dissolution of corresponding CFs of Ag/PMMA@CsPbI3/FTO device[60]; (b) Depletion width varied in p-type perovskite CsSnI3 layer due to Sn vacancies under an electric field[61]; (c) Schottky barrier formed at MAPbI3/TiO2 interface and resulting asymmetry I-V curve of Au/MAPbI3/TiO2/FTO device[62]; (d) RS loops of Al/Cs0.05(FAxMA1−x)0.95PbIyBr3−y/TiO2/FTO structure under dark condition and light illumination; (e) Depletion region at Cs0.05(FAxMA1−x)0.95PbIyBr3−y/TiO2 interface in low resistance state (LRS) and high resistance state (HRS) under illumination[63]; (f) Light-induced RS behaviours of Ni/ZnO/CsPbBr3/FTO device[64]. Colorful figures are available on website

Fig. 6 Application of perovskite-based RS devices[24,30,79,83,86,92-93] (a) CsPbBr3 quantum dots based phototransistor emulating human visual systems[92]; (b) MAPbI3 based synaptic transistor emulating a biological synapse[79]; (c) AgBiI4 used in artificial sensory neuron system emulating biological tactile sensing system[93]; (d) Schematic illustration of Ag/SrTiO3/CsPbBr3/Au device structure; (e) Photodetector, photomemory, memory mode and breakdown of Ag/SrTiO3/CsPbBr3/Au device[83]; (f, g) Schematic illustration of woven fibrous crosspoint RS devices with the architecture of Al@MAPbI3/Al[30]; (h) Al/CH3NH3SnCl3/polyvinyl alcohol/ITO/PET devices achieving logic “OR” and “AND” gate[86]; (i) Physical unclonable functions (memPUFs) of PrPyr[PbI3] RS devices[24]. PrPyr[PbI3]: Propyl pyridinium lead iodide

References 98

[1]	WANG S Y, LIU L, GAN L R, et al. Two-dimensional ferroelectric channel transistors integrating ultra-fast memory and neural computing. Nature Communications, 2021, 12: 53. DOI PMID
[2]	ZHANG B, CHEN W L, ZENG J M, et al. 90% yield production of polymer nano-memristor for in-memory computing. Nature Communications, 2021, 12(1): 1984. DOI PMID
[3]	DUBOST V, CREN T, VAJU C, et al. Resistive switching at the nanoscale in the mott insulator compound GaTa₄Se₈. Nano Letters, 2013, 13(8): 3648. DOI PMID
[4]	GAO S, SONG C, CHEN C, et al. Dynamic processes of resistive switching in metallic filament-based organic memory devices. The Journal of Physical Chemistry C, 2012, 116(33): 17955. DOI URL
[5]	YOO E J, KIM J H, SONG J H, et al. Resistive switching characteristics of the Cr/ZnO/Cr structure. Journal of Nanoscience and Nanotechnology, 2013, 13(9): 6395. PMID
[6]	REN S X, LI Z H, LIU X M, et al. Oxygen migration induced effective magnetic and resistive switching boosted by graphene quantum dots. Journal of Alloys and Compounds, 2021, 863: 158339. DOI URL
[7]	REN S X, LI Z H, TANG L H, et al. Conduction response in highly flexible nonvolatile memory devices. Advanced Electronic Materials, 2020, 6(5): 2000151. DOI URL
[8]	KANG K J, HU W, TANG X S. Halide perovskites for resistive switching memory. The Journal of Physical Chemistry Letters, 2021, 12(48): 11673. DOI URL
[9]	CHUA L O. Memristor-the missing circuit element. IEEE Transactions on Circuit Theory, 1971, 18(5): 507. DOI URL
[10]	STRUKOV D B, SNIDER G S, STEWART D R, et al. The missing memristor found. Nature, 2008, 453(7191): 80. DOI
[11]	CHUA L. If it’s pinched it’s a memristor. Semiconductor Science and Technology, 2014, 29(10): 104001. DOI URL
[12]	ZHANG C, LI Y, MA C L, et al. Recent progress of organic-inorganic hybrid perovskites in RRAM, artificial synapse, and logic operation. Small Science, 2022, 2(2): 2100086. DOI URL
[13]	REN S X, YANG Z, AN S L, et al. High-efficiency photoelectric regulation of resistive switching memory in perovskite quantum dots. Acta Physico-Chimica Sinica, 2023, 3(9): 2301033.
[14]	YOO E J, LYU M, YUN J H, et al. Resistive switching behavior in organic-inorganic hybrid CH₃NH₃PbI_3-_xCl_x perovskite for resistive random access memory devices. Advanced Materials, 2015, 27(40): 6170. DOI URL
[15]	LIU Q, GAO S, XU L, et al. Nanostructured perovskites for nonvolatile memory devices. Chemical Society Reviews, 2022, 51(9): 3341. DOI URL
[16]	LAI H J, ZHOU Y, ZHOU H B, et al. Photoinduced multi-bit nonvolatile memory based on a van der Waals heterostructure with a 2D-perovskite floating gate. Advanced Materials, 2022, 34(19): 2110278. DOI URL
[17]	MA F M, ZHU Y B, XU Z W, et al. Optoelectronic perovskite synapses for neuromorphic computing. Advanced Functional Materials, 2020, 30(11): 1908901. DOI URL
[18]	DI J Y, DU J H, LIN Z H, et al. Recent advances in resistive random access memory based on lead halide perovskite. InfoMat, 2021, 3(3): 293. DOI URL
[19]	LIU X M, REN S X, LI Z H, et al. Flexible transparent high-efficiency photoelectric perovskite resistive switching memory. Advanced Functional Materials, 2022, 32(38): 2202951. DOI URL
[20]	PARK H L, LEE T W. Organic and perovskite memristors for neuromorphic computing. Organic Electronics, 2021, 98: 106301. DOI URL
[21]	XUE Z Y, XU Y C, JIN C X, et al. Halide perovskite photoelectric artificial synapses: materials, devices, and applications. Nanoscale, 2023, 15(10): 4653. DOI URL
[22]	FANG Y T, ZHAI S B, CHU L, et al. Advances in halide perovskite memristor from lead-based to lead-free materials. ACS Applied Materials & Interfaces, 2021, 13(15): 17141.
[23]	THIEN G S H, AB RAHMAN M, YAP B K, et al. Recent advances in halide perovskite resistive switching memory devices: a transformation from lead-based to lead-free perovskites. ACS Omega, 2022, 7(44): 39472. DOI PMID
[24]	JOHN R A, SHAH N, VISHWANATH S K, et al. Halide perovskite memristors as flexible and reconfigurable physical unclonable functions. Nature Communications, 2021, 12: 3681. DOI PMID
[25]	HAO D D, LIU D P, ZHANG J Y, et al. Lead-free perovskites-based photonic synaptic devices with logic functions. Advanced Materials Technologies, 2021, 6(12): 2100678. DOI URL
[26]	LI M, XIONG Z Y, SHAO S S, et al. Multimodal optoelectronic neuromorphic electronics based on lead-free perovskite-mixed carbon nanotubes. Carbon, 2021, 176: 592. DOI URL
[27]	ABBAS G, HASSAN M, KHAN Q, et al. A low power- consumption and transient nonvolatile memory based on highly dense all-inorganic perovskite films. Advanced Electronic Materials, 2022, 8(9): 2101412. DOI URL
[28]	LIU B L, LAI J N, WU D F, et al. High-performance resistive random access memories based on two-dimensional HAPbI₄ organic-inorganic hybrid perovskite. The Journal of Physical Chemistry Letters, 2022, 13(33): 7653. DOI URL
[29]	LIN Q Q, HU W, ZANG Z G, et al. Transient resistive switching memory of CsPbBr₃ thin films. Advanced Electronic Materials, 2018, 4(4): 1700596. DOI URL
[30]	SHU P, CAO X F, DU Y Q, et al. Resistive switching performance of fibrous crosspoint memories based on an organic-inorganic halide perovskite. Journal of Materials Chemistry C, 2020, 8(37): 12865. DOI URL
[31]	PODDAR S, ZHANG Y T, ZHU Y Y, et al. Optically tunable ultra-fast resistive switching in lead-free methyl-ammonium bismuth iodide perovskite films. Nanoscale, 2021, 13(12): 6184. DOI PMID
[32]	HAN J S, LE Q V, CHOI J, et al. Air-stable cesium lead iodide perovskite for ultra-low operating voltage resistive switching. Advanced Functional Materials, 2018, 28(5): 1705783. DOI URL
[33]	ZHENG Y D, LUO F F, RUAN L X, et al. A facile fabrication of lead-free Cs₂NaBiI₆ double perovskite films for memory device application. Journal of Alloys and Compounds, 2022, 909: 164613. DOI URL
[34]	LIU Z H, CHENG P P, LI Y F, et al. Multilevel halide perovskite memristors based on optical & electrical resistive switching effects. Materials Chemistry and Physics, 2022, 288: 126393. DOI URL
[35]	LI Y F, CHENG P P, ZHOU L Y, et al. Light-induced nonvolatile resistive switching in Cs_0.15FA_0.85PbI_3-_xBr_x perovskite-based memristors. Solid-State Electronics, 2021, 186: 108166. DOI URL
[36]	CAO X F, HAN Y Z, ZHOU J K, et al. Enhanced switching ratio and long-term stability of flexible RRAM by anchoring polyvinylammonium on perovskite grains. ACS Applied Materials & Interfaces, 2019, 11(39): 35914.
[37]	SUN Y M, TAI M Q, SONG C, et al. Competition between metallic and vacancy defect conductive filaments in a CH₃NH₃PbI₃-based memory device. The Journal of Physical Chemistry C, 2018, 122(11): 6431. DOI URL
[38]	PARAMANIK S, MAITI A, CHATTERJEE S, et al. Large resistive switching and artificial synaptic behaviors in layered Cs₃Sb₂I₉ lead-free perovskite memory devices. Advanced Electronic Materials, 2022, 8(1): 2100237. DOI URL
[39]	GEORGE T, MURUGAN A V. Improved performance of the Al₂O₃-protected HfO₂-TiO₂ base layer with a self-assembled CH₃NH₃PbI₃ heterostructure for extremely low operating voltage and stable filament formation in nonvolatile resistive switching memory. ACS Applied Materials & Interfaces, 2022, 14(45): 51066.
[40]	PARK Y, LEE J S. Metal halide perovskite-based memristors for emerging memory applications. The Journal of Physical Chemistry Letters, 2022, 13(24): 5638. DOI URL
[41]	PAUL T, SARKAR P K, MAITI S, et al. Multilevel programming and light-assisted resistive switching in a halide-tunable all- inorganic perovskite cube for flexible memory devices. ACS Applied Electronic Materials, 2020, 2(11): 3667. DOI URL
[42]	CHENG X F, QIAN W H, WANG J, et al. Environmentally robust memristor enabled by lead-free double perovskite for high- performance information storage. Small, 2019, 15(49): 1905731. DOI URL
[43]	SUN Y M, SONG C, YIN J, et al. Guiding the growth of a conductive filament by nanoindentation to improve resistive switching. ACS Applied Materials & Interfaces, 2017, 9(39): 34064.
[44]	CHENG X F, HOU X, ZHOU J, et al. Pseudohalide-induced 2D (CH₃NH₃)₂PbI₂(SCN)₂ perovskite for ternary resistive memory with high performance. Small, 2018, 14(12): 1703667. DOI URL
[45]	SONG K Y, CHEN B J, LIN X L, et al. Thermal enhanced resistive switching performance of <100>-oriented perovskite [(TZ-H)₂(PbBr₄)]_n with high working temperature: a triazolium/(PbBr₄)_n²ⁿ^- interfacial interaction insight. Advanced Electronic Materials, 2022, 8(11): 2200537. DOI URL
[46]	WANG Z P, LIN Q Q, CHMIEL F P, et al. Efficient ambient- air-stable solar cells with 2D-3D heterostructured butylammonium- caesium-formamidinium lead halide perovskites. Nature Energy, 2017, 2(9): 17135. DOI URL
[47]	LIU Y C, YE H C, ZHANG Y X, et al. Surface-tension-controlled crystallization for high-quality 2D perovskite single crystals for ultrahigh photodetection. Matter, 2019, 1(2): 465. DOI URL
[48]	DI J Y, LIN Z H, SU J, et al. Two-dimensional (C₆H₅C₂H₄NH₃)₂PbI₄ perovskite single crystal resistive switching memory devices. IEEE Electron Device Letters, 2021, 42(3): 327. DOI URL
[49]	BHARATHI M, BALRAJ B, SIVAKUMAR C, et al. Effect of Ag doping on bipolar switching operation in molybdenum trioxide (MoO₃) nanostructures for non-volatile memory. Journal of Alloys and Compounds, 2021, 862: 158035. DOI URL
[50]	LEE S M, KIM H, KIM D H, et al. Tailored 2D/3D halide perovskite heterointerface for substantially enhanced endurance in conducting bridge resistive switching memory. ACS Applied Materials & Interfaces, 2020, 12(14): 17039.
[51]	PODDAR S, ZHANG Y T, GU L L, et al. Down-scalable and ultra- fast memristors with ultra-high density three-dimensional arrays of perovskite quantum wires. Nano Letters, 2021, 21(12): 5036. DOI URL
[52]	ZHANG G L, XU Y Q, YANG S, et al. Robust mica perovskite photoelectric resistive switching memory. Nano Energy, 2023, 106: 108074. DOI URL
[53]	ZHAO X N, WANG Z Q, LI W T, et al. Photoassisted electroforming method for reliable low-power organic-inorganic perovskite memristors. Advanced Functional Materials, 2020, 30(17): 1910151. DOI URL
[54]	KATO Y, ONO L K, LEE M V, et al. Silver iodide formation in methyl ammonium lead iodide perovskite solar cells with silver top electrodes. Advanced Materials Interfaces, 2015, 2(13): 1500195. DOI URL
[55]	HAM S, CHOI S, CHO H, et al. Photonic organolead halide perovskite artificial synapse capable of accelerated learning at low power inspired by dopamine-facilitated synaptic activity. Advanced Functional Materials, 2019, 29(5): 1806646. DOI URL
[56]	LIU Z H, CHENG P P, KANG R Y, et al. Photo-enhanced resistive switching effect in high-performance MAPbI₃ memristors. Advanced Materials Interfaces, 2023, 10(2): 2201513. DOI URL
[57]	ROGDAKIS K, LOIZOS M, VISKADOUROS G, et al. Memristive perovskite solar cells towards parallel solar energy harvesting and processing-in-memory computing. Materials Advances, 2022, 3(18): 7002. DOI URL
[58]	SIDDIK A, HALDAR P K, DAS U, et al. Organic-inorganic FAPbBr₃ perovskite based flexible optoelectronic memory device for light-induced multi level resistive switching application. Materials Chemistry and Physics, 2023, 297: 127292. DOI URL
[59]	ZHENG Y C, YU D F, LIAN H J, et al. Controllable extrinsic ion transport in two-dimensional perovskite films for reproducible, low-voltage resistive switching. Science China Materials, 2023, 66: 2383. DOI
[60]	XU J, WU Y H, LI Z Z, et al. Resistive switching in nonperovskite-phase CsPBI₃ film-based memory devices. ACS Applied Materials & Interfaces, 2020, 12(8): 9409.
[61]	HAN J S, LE Q V, CHOI J, et al. Lead-free all-inorganic cesium tin iodide perovskite for filamentary and interface-type resistive switching toward environment-friendly and temperature-tolerant nonvolatile memories. ACS Applied Materials & Interfaces, 2019, 11(8): 8155.
[62]	LEE S, WOLFE S, TORRES J, et al. Asymmetric bipolar resistive switching of halide perovskite film in contact with TiO₂ layer. ACS Applied Materials & Interfaces, 2021, 13(23): 27209.
[63]	WANG S X, DONG X Q, XIONG Y X, et al. CsFAMAPbIBr photoelectric memristor based on ion-migration induced memristive behavior. Advanced Electronic Materials, 2021, 7(5): 2100014. DOI URL
[64]	WU Y, WEI Y, HUANG Y, et al. Capping CsPbBr₃ with ZnO to improve performance and stability of perovskite memristors. Nano Research, 2017, 10(5): 1584. DOI URL
[65]	SEO J Y, CHOI J, KIM H S, et al. Wafer-scale reliable switching memory based on 2-dimensional layered organic-inorganic halide perovskite. Nanoscale, 2017, 9(40): 15278. DOI URL
[66]	MA H L, WANG W, XU H Y, et al. Interface state-induced negative differential resistance observed in hybrid perovskite resistive switching memory. ACS Applied Materials & Interfaces, 2018, 10(25): 21755.
[67]	SAWA A. Resistive switching in transition metal oxides. Materials Today, 2008, 11(6): 28.
[68]	KIM H, CHOI M J, SUH J M, et al. Quasi-2D halide perovskites for resistive switching devices with ON/OFF ratios above 10⁹. NPG Asia Materials, 2020, 12(1): 21. DOI
[69]	DAS U, SARKAR P K, DAS D, et al. Influence of nanoscale charge trapping layer on the memory and synaptic characteristics of a novel rubidium lead chloride quantum dot based memristor. Advanced Electronic Materials, 2022, 8(5): 2101015. DOI URL
[70]	JOHN R A, YANTARA N, NG Y F, et al. Ionotronic halide perovskite drift-diffusive synapses for low-power neuromorphic computation. Advanced Materials, 2018, 30(51): 1805454. DOI URL
[71]	QIAN W H, CHENG X F, ZHAO Y Y, et al. Independent memcapacitive switching triggered by bromide ion migration for quaternary information storage. Advanced Materials, 2019, 31(37): 1806424. DOI URL
[72]	ZHOU F C, LIU Y H, SHEN X P, et al. Low-voltage, optoelectronic CH₃NH₃PbI_3-_xCl_x memory with integrated sensing and logic operations. Advanced Functional Materials, 2018, 28(15): 1800080. DOI URL
[73]	GUAN X W, HU W J, HAQUE M A, et al. Light-responsive ion-redistribution-induced resistive switching in hybrid perovskite Schottky junctions. Advanced Functional Materials, 2018, 28(3): 1704665. DOI URL
[74]	LI M Z, GUO L C, DING G L, et al. Inorganic perovskite quantum dot-based strain sensors for data storage and in-sensor computing. ACS Applied Materials & Interfaces, 2021, 13(26): 30861.
[75]	HUANG X, LI Q Y, SHI W, et al. Dual-mode learning of ambipolar synaptic phototransistor based on 2D perovskite/organic heterojunction for flexible color recognizable visual system. Small, 2021, 17(36): 2102820. DOI URL
[76]	HAO J, KIM Y H, HABISREUTINGER S N, et al. Low-energy room-temperature optical switching in mixed-dimensionality nanoscale perovskite heterojunctions. Science Advances, 2021, 7(18): eabf1959.
[77]	YANG X Y, XIONG Z Y, CHEN Y J, et al. A self-powered artificial retina perception system for image preprocessing based on photovoltaic devices and memristive arrays. Nano Energy, 2020, 78: 105246. DOI URL
[78]	YANG J Q, WANG R P, WANG Z P, et al. Leaky integrate-and-fire neurons based on perovskite memristor for spiking neural networks. Nano Energy, 2020, 74: 104828. DOI URL
[79]	YIN L, HUANG W, XIAO R L, et al. Optically stimulated synaptic devices based on the hybrid structure of silicon nanomembrane and perovskite. Nano Letters, 2020, 20(5): 3378. DOI PMID
[80]	YEN M C, LEE C J, LIU K H, et al. All-inorganic perovskite quantum dot light-emitting memories. Nature Communications, 2021, 12: 4460. DOI
[81]	ERCAN E, LIN Y C, HSU L C, et al. Multilevel photonic transistor memory devices based on 1D electrospun semiconducting polymer/perovskite composite nanofibers. Advanced Materials Technologies, 2021, 6(8): 2100080. DOI URL
[82]	VASILOPOULOU M, KIM B S, KIM H P, et al. Perovskite flash memory with a single-layer nanofloating gate. Nano Letters, 2020, 20(7): 5081. DOI PMID
[83]	GUAN X W, WAN T, HU L, et al. A solution-processed all-perovskite memory with dual-band light response and tri-mode operation. Advanced Functional Materials, 2022, 32(16): 2110975. DOI URL
[84]	PEI J X, WU X H, LIU W J, et al. Photoelectric logic and in situ memory transistors with stepped floating gates of perovskite quantum dots. ACS Nano, 2022, 16(2): 2442. DOI URL
[85]	LIU Q, YUE W J, LI Y, et al. Multifunctional optoelectronic random access memory device based on surface-plasma-treated inorganic halide perovskite. Advanced Electronic Materials, 2021, 7(7): 2100366. DOI URL
[86]	SUN Y M, WEN D Z. Logic function and random number generator build based on perovskite resistive switching memory and performance conversion via flexible bending. ACS Applied Electronic Materials, 2020, 2(2): 618. DOI URL
[87]	CHEN Q L, ZHANG Y, LIU S Z, et al. Switchable perovskite photovoltaic sensors for bioinspired adaptive machine vision. Advanced Intelligent Systems, 2020, 2(9): 2000122. DOI URL
[88]	YAN X B, HE H D, LIU G J, et al. A robust memristor based on epitaxial vertically aligned nanostructured BaTiO₃-CeO₂ films on silicon. Advanced Materials, 2022, 34(23): 2110343. DOI URL
[89]	PEI Y F, LI Z Q, LI B, et al. A multifunctional and efficient artificial visual perception nervous system with Sb₂Se₃/CdS- core/shell (SC) nanorod arrays optoelectronic memristor. Advanced Functional Materials, 2022, 32(29): 2203454. DOI URL
[90]	PARK Y, KIM M K, LEE J S. 2D layered metal-halide perovskite/oxide semiconductor-based broadband optoelectronic synaptic transistors with long-term visual memory. Journal of Materials Chemistry C, 2021, 9(4): 1429. DOI URL
[91]	KIM S J, LEE T H, YANG J M, et al. Vertically aligned two- dimensional halide perovskites for reliably operable artificial synapses. Materials Today, 2022, 52: 19. DOI URL
[92]	ZHU Q B, LI B, YANG D D, et al. A flexible ultrasensitive optoelectronic sensor array for neuromorphic vision systems. Nature Communications, 2021, 12(1): 1798. DOI
[93]	YE H B, LIU Z Y, HAN H D, et al. Lead-free AgBiI₄ perovskite artificial synapses for a tactile sensory neuron system with information preprocessing function. Materials Advances, 2022, 3(19): 7248. DOI URL
[94]	YAN X B, PEI Y F, CHEN H W, et al. Self-assembled networked PbS distribution quantum dots for resistive switching and artificial synapse performance boost of memristors. Advanced Materials, 2019, 31(7): 1805284. DOI URL
[95]	PEI Y F, YAN L, WU Z H, et al. Artificial visual perception nervous system based on low-dimensional material photoelectric memristors. ACS Nano, 2021, 15(11): 17319. DOI PMID
[96]	YAN X B, YAN H W, LIU G J, et al. Silicon-based epitaxial ferroelectric memristor for high temperature operation in self-assembled vertically aligned BaTiO₃-CeO₂ films. Nano Research, 2022, 15(10): 9654. DOI
[97]	YANG Y, OUYANG J Y, MA L P, et al. Electrical switching and bistability in organic/polymeric thin films and memory devices. Advanced Functional Materials, 2006, 16(8): 1001. DOI URL
[98]	YAN K, PENG M, YU X, et al. High-performance perovskite memristor based on methyl ammonium lead halides. Journal of Materials Chemistry C, 2016, 4(7): 1375. DOI URL