Journal of Inorganic Materials ›› 2024, Vol. 39 ›› Issue (6): 634-646.DOI: 10.15541/jim20230530
Special Issue: 【结构材料】高导热陶瓷(202409)
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WANG Weiming1(), WANG Weide1,2(
), SU Yi1, MA Qingsong1, YAO Dongxu3, ZENG Yuping3(
)
Received:
2023-11-14
Revised:
2024-01-15
Published:
2024-06-20
Online:
2024-01-22
Contact:
WANG Weide, associate professor. E-mail: nudtwwd@163.com;About author:
WANG Weiming (1995-), male, PhD candidate. E-mail: wangweiming1207@163.com
Supported by:
CLC Number:
WANG Weiming, WANG Weide, SU Yi, MA Qingsong, YAO Dongxu, ZENG Yuping. Research Progress of High Thermal Conductivity Silicon Nitride Ceramics Prepared by Non-oxide Sintering Additives[J]. Journal of Inorganic Materials, 2024, 39(6): 634-646.
Material | Thermal conductivity/ (W·m-1·K-1) | Fracture toughness/ (MPa·m1/2) | Bending strength/ MPa |
---|---|---|---|
Al2O3 | 18-24 | 3.5-4.0 | 300-400 |
AlN | 150-270 | 3.0-3.5 | 220-310 |
ZTA | 28 | 4.5 | 650 |
Si3N4 | 80-177 | 6.5-7.5 | 600-800 |
Table 1 Properties of ceramic substrate materials[2]
Material | Thermal conductivity/ (W·m-1·K-1) | Fracture toughness/ (MPa·m1/2) | Bending strength/ MPa |
---|---|---|---|
Al2O3 | 18-24 | 3.5-4.0 | 300-400 |
AlN | 150-270 | 3.0-3.5 | 220-310 |
ZTA | 28 | 4.5 | 650 |
Si3N4 | 80-177 | 6.5-7.5 | 600-800 |
Fig. 7 Depolymerization mechanism of F atom in silicate melts[22] (a) F atom breaks the network structure by replacing the bridging oxygen atoms; (b) Solute atom solution-diffusion-precipitation mechanism during liquid-phase sintering in samples YOMO and YFMF; (c) Free energy barriers overcome by solute atoms in melts Y-Si-O-N and Y-Si-O-N-F; (d) Mechanism of solute drag effect on grain boundary migration
Fig. 8 SEM morphologies of the polished surfaces of Si3N4 ceramics after gas pressure sintering (GPS) with different additives added[24] (a) MgO-doped for 2 h; (b) MgO-doped for 48 h; (c) MgSiN2-doped for 2 h; (d) MgSiN2-doped for 48 h
Fig. 14 STEM-EDS characterizations of Si3N4 ceramics with the addition of ZrO2 and ZrH2[47] (a, d) Bright-field TEM images for Si3N4 ceramics with the addition of (a) ZrO2 and (d) ZrH2; (b, e) Elements distribution for Si3N4 ceramics with the addition of (b) ZrO2 and (e) ZrH2; (c) EDS analysis of the marked points in (a, d) images; (f) HRTEM image presenting the grain boundary film marked by the red rectangle in (d) image
Fig. 15 SEM images on the fracture surfaces of nitrided samples (a, b) and post-sintered samples (c, d) without (a, c) and with (b, d) graphite powder bed addition[57]
Fig. 16 TEM images of PDA-coated powder and schematic of Si3N4-C core-shell structure[59-60] (a, e) Overall morphologies of PDA-coated (a) and PDA-free (e) powder; (b, f) Partial magnified images of (a, e), respectively; (c, g) O distributions of PDA-coated (c) and PDA-free (g) powder; (d, h) Si and N distributions of PDA-coated (d) and PDA-free (h) powder; (i) Schematic of Si3N4-C core-shell structure
Fig. 17 (a) Shrinkage behaviors and densification mechanism of Si3N4 ceramics during sintering, and (b) relationship between β phase ratio and relative density[62]
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