Progress of High Strength and High Thermal Conductivity Si3N4 Ceramics for Power Module Packaging

doi:10.15541/jim20230037

Abstract

Abstract:

With the rise of the third-generation wide-bandgap semiconductors represented by SiC and GaN, power electronic devices are developing rapidly towards high output power and high power density, putting forward higher performance requirements on ceramic substrate materials used for power module packaging. The conventional Al₂O₃ and AlN ceramics are inadequate for the new generation of power module packaging applications due to low thermal conductivity or poor mechanical properties. In comparison, the newly developed Si₃N₄ ceramics have become the most potential insulating heat dissipation substrate materials due to its excellent mechanical properties and high thermal conductivity. In recent years, researchers have made a series of breakthroughs in the preparation of high strength and high thermal conductivity Si₃N₄ ceramics by screening effective sintering additive systems and optimizing the sintering processes. Meanwhile, as the advancement of the engineering application of coppered Si₃N₄ ceramic substrate, the evaluation of its mechanical, thermal, and electrical properties has become a research hotspot. Starting from the factors affecting thermal conductivity of Si₃N₄ ceramics, this article reviews the domestic and international research work focused on sintering aids selection and sintering processes improvement to enhance the thermal conductivity of Si₃N₄ ceramics. In addition, the latest progress in the dielectric breakdown strength of Si₃N₄ceramic substrates and the evaluation of properties after being coppered are also systematically summarized and introduced. Based on above progresses and faced challengies, the future development direction of high strength and high thermal conductivity Si₃N₄ ceramic substrates is prospected.

Key words: silicon nitride, thermal conductivity, mechanical property, sintering additives, sintering processes, review

CLC Number:

TQ174

FU Shi, YANG Zengchao, LI Jiangtao. Progress of High Strength and High Thermal Conductivity Si₃N₄ Ceramics for Power Module Packaging[J]. Journal of Inorganic Materials, 2023, 38(10): 1117-1132.

Figures/Tables 22

Fig. 1 Schematic diagram of power module and metallized ceramic substrate[7]

Table 1 Properties of Al2O3, AlN and Si3N4 ceramic substrate materials[8]

Material	Al₂O₃	AlN	Si₃N₄
Density/(g·cm^-3)	3.9	3.3	3.2
Elasticity modulus/GPa	370	310	320
Bending strength/MPa	300-400	220-310	600-750
Fracture toughness/(MPa·m^1/2)	3.5-4.0	3.0-3.5	6.5-7.5
Thermal expansion coefficient/ (×10^-6, K^-1)	7-8	4.6	2.7-3.4
Thermal conductivity/ (W·m^-1·K^-1)	18-24	67-150	27-54
Dielectric strength/(kV·mm^-1)	10-18	14-16	12-18
Resistivity/(Ω·m)	>10¹²	>10¹²	>10¹²
Relative permittivity	9-10	6.0-8.5	7-9

Fig. 2 Appearance of (a) Si3N4 coppered substrate after 1000 thermal cycles of -40 to 250 ℃, (b) AlN coppered substrate after 7 cycles of -40 to 250 ℃, and (c) side view of the delaminated Cu plate indicated by white circle in (b) [9]

Fig. 3 Microstructure factors affecting the thermal conductivity of Si3N4 ceramics

Fig. 4 Effect of grain size on the thermal conductivity of β-Si3N4 with various grain-boundary film thicknesses[35] Grain-boundary film thickness δ=1, 10 and 50 nm. Calculations were performed using the aspect ratio at 5 and the volume fraction of grain boundary phase at 6%. ‘Para’ and ‘perp’ indicate thermal conductivity parallel and perpendicular to the hot-press direction, respectively

Fig. 5 Thermal conductivity and lattice oxygen content of β-Si3N4 changed by adjusting the ratio of Y2O3/SiO2[18]

Fig. 6 Relationships between ionic radii of rare-earth oxide additives and (a) thermal conductivity, (b) thermal diffusivity and (c) lattice oxygen content of β-Si3N4[43]

Fig. 7 Bright-field (BF) TEM images of Si3N4 samples[46] (a) Containing lattice defects (indicated by black arrows); (b) No lattice defects included

Fig. 8 Developments of high thermal conductivity Si3N4 ceramics with different sintering additives systems and sintering methods GPS: Gas pressure sintering, HIP: Hot isostatic pressing, HP: Hot pressed, SRBSN: Sintering of reaction-bonded Si3N4, M-SRBSN: Modified sintering of reaction-bonded Si3N4, SPS: Spark plasma sintering, PLS: pressless sintering, PSRBSN: Pressure-sintered reaction-bonded Si3N4. Numbers in the chart represent relevant references

Fig. 9 Change of (a) average grain size, (b) bending strength, (c) fracture toughness, and (d) thermal conductivity of Si3N4 ceramics with radius of rare earth ion[79] REM: Before annealing; REMH: After annealing

Fig. 10 Elemental distributions of the polished surface of Si3N4 with Gd2O3-MgSiN2 additives after sintering at 1900 ℃ for 12 h[80]

Fig. 11 Schematic diagram of the mechanism of sintering additive ZrH2 in the sintering of Si3N4 ceramics[76]

Fig. 12 Effect of carbon addition on the microstructure of Si3N4 ceramics[67] (a, b) Low-magnification images of (a) SN and (b) SNC; (c, d) High- magnification images of (c) SN and (d) SNC. SN: Carbon free; SNC: Containing carbon

Fig. 13 Kinetic analysis of β-Si3N4 grain growth in Si3N4 samples with Y2O3-MgO and YF3-MgF2 additives[88]

Fig. 14 Relationships between thermal conductivity of Si3N4 ceramics prepared by different sintering processes and (a) sintering time, (b) lattice oxygen content and (c) flexural strength[16,93,94]

Fig. 15 Schematic diagram of the four different embedding conditions[95]

Fig. 16 Effect of different pre-sintering temperature on the microstructure of Si3N4 after two-step sintering((a) 1500 ℃, (b) 1525 ℃, (c) 1550 ℃ and (d) 1600 ℃), (e) relative density of Si3N4 samples after pre-sintering and two-step sintering, and (f) thermal conductivity and flexural strength of Si3N4 samples after two-step sintering[97]

Fig. 17 Thermal conductivity, bending strength and fracture toughness of Si3N4 ceramics prepared by different sintering methods and additives Numbers in the chart represent relevant references

Fig. 18 Effect of substrate thickness on the dielectric breakdown strength (DBS) of Si3N4 ceramics sintered for (a) 1, (b) 3, (c) 6, (d) 12, (e) 24, and (f) 48 h[117]

Fig. 19 Schematic images of the connecting path for the interface between β-Si3N4 grain and grain boundary phases/ intergranular glassy films (IGFs) in the substrates which have (a) smaller and (b) larger ratio of grain size to substrate thickness[117]

Table 2 Mechanical and thermal properties of Si3N4 ceramic substrates and AlN ceramic substrates for thermal cycle testing[118]

Ceramic substrate (Material code)	Flexural strength/MPa	Fracture toughness/(MPa·m^1/2)	Thermal conductivity/(W·m^-1·K^-1)
Si₃N₄ (SN-1)	669±29	10.5±0.2	140
Si₃N₄(SN-2)	909±303	5.2±0.2	21
Si₃N₄ (SN-3)	977±79	5.5±0.1	-
Si₃N₄ (SN-4)	604±25	8.0±0.4	90
AlN	461±62	3.2±0.2	180

Fig. 20 Images of the SN-1 coppered substrate after different thermal cycles ((a) 10 cycles, (b) 100 cycles, (c) 200 cycles, and (d) 1000 cycles), (e) plots of residual to initial strength ratio vs. thermal cycle number of the coppered substrates, and (f) relationship between residual to initial strength ratio and fracture toughness of the Si3N4 coppered substrates after 10 cycles[118]

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Progress of High Strength and High Thermal Conductivity Si₃N₄ Ceramics for Power Module Packaging

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