基于金属-半导体-金属鳍式隧穿二极管的高频整流桥电路

doi:10.15541/jim20250076

无机材料学报 ›› 2026, Vol. 41 ›› Issue (2): 253-261.DOI: 10.15541/jim20250076 CSTR: 32189.14.jim20250076

基于金属-半导体-金属鳍式隧穿二极管的高频整流桥电路

邓恒杨¹(), 秦翠洁¹, 郝胜兰¹, 冯光迪¹^,², 朱秋香¹(), 田博博¹^,²(), 褚君浩¹, 段纯刚¹^,³

1.华东师范大学电子科学系, 极化材料与器件教育部重点实验室, 上海类脑智能材料与器件研发中心, 上海 200241
2.华东师范大学重庆研究院精密光学重庆市重点实验室, 重庆 401120
3.山西大学山西省极端光学协同创新中心, 太原 030006

收稿日期:2025-02-22 修回日期:2025-03-14 出版日期:2026-02-20 网络出版日期:2025-05-09
通讯作者: 朱秋香, 副教授. E-mail: qxzhu@clpm.ecnu.edu.cn;
田博博, 教授. E-mail: bbtian@ee.ecnu.edu.cn
作者简介:邓恒杨(1999-), 男, 硕士研究生. E-mail: 51254700083@stu.ecnu.edu.cn

A Rectifier Bridge Circuit Based on Metal-semiconductor-metal Fin Tunneling Diode for High-frequency Application

DENG Hengyang¹(), QIN Cuijie¹, HAO Shenglan¹, FENG Guangdi¹^,², ZHU Qiuxiang¹(), TIAN Bobo¹^,²(), CHU Junhao¹, DUAN Chungang¹^,³

1. Shanghai Center of Brain-inspired Intelligent Materials and Devices, Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal University, Shanghai 200241, China
2. Chongqing Key Laboratory of Precision Optics, Chongqing Institute of East China Normal University, Chongqing 401120, China
3. Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, China

Received:2025-02-22 Revised:2025-03-14 Published:2026-02-20 Online:2025-05-09
Contact: ZHU Qiuxiang, associate professor. E-mail: qxzhu@clpm.ecnu.edu.cn;
TIAN Bobo, professor. E-mail: bbtian@ee.ecnu.edu.cn
About author:DENG Hengyang (1999-), male, Master candidate. E-mail: 51254700083@stu.ecnu.edu.cn
Supported by:
National Key Research and Development Program of China(2024YFA1410700);National Key Research and Development Program of China(2021YFA1200700);National Natural Science Foundation of China(62474065);National Natural Science Foundation of China(T2222025);National Natural Science Foundation of China(62174053);Natural Science Foundation of Chongqing(CSTB2024NSCQ-JQX0005);Shanghai Science and Technology Innovation Action Plan(24QA2702300);Shanghai Science and Technology Innovation Action Plan(24YF2710400);National Postdoctoral Program(GZB20240225);Fundamental Research Funds for the Central Universities

摘要/Abstract

摘要：

隧穿二极管在太赫兹(THz)和可见光频谱的未来整流领域中具有显著的应用前景, 这得益于其拥有飞秒级的隧穿渡越时间。本研究制备了隧穿距离分别为10和5 nm的TiN/ZnO/Pt鳍式隧道二极管(Fin tunneling diodes, FTDs), 它们展现出优异的特性, 其中包括超高的不对称性(10 nm器件为1.6×10⁴, 5 nm器件为1.6×10³)、零偏压下的高响应度(10 nm器件为25.3 V^-1, 5 nm器件为28.3 V^-1), 均超越了传统肖特基二极管的热电压限制, 并且两个器件的开启电压(V_on)都极低, 约为100 mV, 这使得它们成为能量转换应用的理想选择。基于技术计算机辅助设计(Technology computer-aided design, TCAD)模拟, 所观测到的电子传输不对称性可归因于在不同偏置条件下福勒-诺德海姆隧穿(Fowler-Nordheim tunneling, FNT)和陷阱辅助隧穿(Trap-assisted tunneling, TAT)之间的转变, 这在相应的能带排列图中得以阐明。此外, 通过对FTDs进行集成, 设计了一种具有全波整流特性的整流桥电路, 其在太赫兹波段(0.1 THz)的整流性能通过SPICE电路仿真得到了验证。本研究为太赫兹能量转换和探测应用提供了一种高效的解决方案。

关键词: 鳍式隧穿二极管, TCAD仿真, 整流桥, SPICE仿真

Abstract:

Tunneling diodes hold significant promise for future rectification in the terahertz (THz) and visible light spectra, thanks to their femtosecond-scale transit-time tunneling capabilities. In this work, TiN/ZnO/Pt fin tunneling diodes (FTDs) with tunneling distances of 10 and 5 nm are fabricated, which demonstrate remarkable characteristics, including ultrahigh asymmetry (1.6×10⁴ for 10 nm device and 1.6×10³ for 5 nm device), high responsivity (25.3 V^-1 for 10 nm device and 28.3 V^-1 for 5 nm device) at zero bias, surpassing the thermal voltage limit of conventional Schottky diodes, and low turn-on voltage (V_on) of approximately 100 mV for both devices, making them ideal for power conversion applications. Using technology computer-aided design (TCAD) simulations, the observed asymmetry in electronic transport is attributed to the transition between Fowler-Nordheim tunneling (FNT) and trap-assisted tunneling (TAT) under different biasing conditions, as illustrated by the corresponding energy band profiles. Furthermore, by integrating the FTDs, a rectifier bridge circuit is designed and exhibits full-wave rectification behavior, validated through SPICE simulations for THz-band operations. This advancement offers a highly efficient solution for THz-band energy conversion and effective detection applications.

Key words: fin tunneling diode, TCAD simulation, rectifier bridge, SPICE simulation

中图分类号:

TQ174

邓恒杨, 秦翠洁, 郝胜兰, 冯光迪, 朱秋香, 田博博, 褚君浩, 段纯刚. 基于金属-半导体-金属鳍式隧穿二极管的高频整流桥电路[J]. 无机材料学报, 2026, 41(2): 253-261.

DENG Hengyang, QIN Cuijie, HAO Shenglan, FENG Guangdi, ZHU Qiuxiang, TIAN Bobo, CHU Junhao, DUAN Chungang. A Rectifier Bridge Circuit Based on Metal-semiconductor-metal Fin Tunneling Diode for High-frequency Application[J]. Journal of Inorganic Materials, 2026, 41(2): 253-261.

图/表 11

Fig. 1 Schematic diagram of line array constituted by TiN/ZnO/Pt FTDs fabricated on a Si/SiO2 substrate, along with cross-sectional view of a single device Upper right inset shows an optical image of an individual device from the top view (scale: 100 μm)

Fig. 2 Fabrication process of the rectifier bridge (a) Deposit TiN bottom circuit; (b) ALD (Atomic layer deposition) deposit Al2O3; (c) Etch holes; (d) Deposit Pt top circuit; (e) Etch Al2O3 and few Pt; (f) Deposit ZnO

Fig. 3 Energy band alignments and electrical characteristics (a) Energy band alignments of ZnO and electrodes (Pt and TiN) after contact; (b) I-V and J-V characteristics of the TiN/ZnO/Pt FTD device across various bias voltage ranges, where the bias is applied to the bottom electrode (TiN) and the top electrode (Pt) remains grounded

Fig. 4 Energy band alignments and fitting of tunneling mechanism of the FTD (a) Energy band alignments of the FTD and (b) ln(I/V2) vs. V-1 plots with FNT fitting under positive voltage; (c) Energy band alignments of the FTD and (d) lnI vs. V-1 plots with TAT fitting under negative voltage

Fig. 5 Rectification performance of FTD (10 nm) and FTD (5 nm) (a) I-V characteristics from experiments of FTD (10 nm) and FTD (5 nm); (b) I-V characteristics of FTD (10 nm) and FTD (5 nm) on a linear scale with Von values being obtained by linear extrapolation; (c) Asymmetry and nonlinearity and (d) responsivity and resistivity of the TiN/ZnO/Pt FTD (10 nm) and FTD (5 nm)

Table 1 Comparison of rectification performance among different tunneling diodes

Structure	f_Asy	V_on/V	f_Res (@0 V)/V^-1	Resistivity/(Ω·cm)
Nb/Nb₂O₃/Pt^[19]	1500	0.15	10	8.3×10⁸ (120×120π μm²)
Ni/NiO/ZnO/Cr^[17]	16	0.25	<5	9.5×10⁵ (20×20 μm²)
Ti/TiO₂/Gr^[6]	320	~0.8	12	2.9×10⁴ (140 μm²)
Ti/ZnO/Pt^[1]	<2	—	0.125	1.125×10⁶ (0.09 mm²)
Co/Co₃O₄/TiO₂/Ti^[25]	2	—	2.2	5.8 (0.17 μm²)
Pt/Al₂O₃/Al^[10]	107	1.4	<5	8.3×10¹² (100 μm²)
Pt/ZnO/Al₂O₃/Al^[27]	227	~0.5	13	3000-5000 (10×10 μm²)
Cr/TiO₂/ZnO/Cr^[38]	5.6	—	0.28	1300 (10⁴ μm²)
FTD (10 nm) (This work)	1.6×10⁴	0.1	25.3	8.8×10⁴ (0.02×500 μm²)
FTD (5 nm) (This work)	1.6×10³	0.1	28.3	8.8×10⁴ (0.02×500 μm²)

Fig. 6 Fitting of tunneling mechanism for FTD (5 nm) (a) ln(I/V2) vs. V-1 plots with FNT fitting under positive voltage; (b) lnI vs. V-1 plots with TAT fitting under negative voltage

Fig. 7 I-V curves obtained from TCAD simulations for TiN/ZnO/Pt FTDs with tunneling distances of 10 and 5 nm, analyzed using the FNT model under positive bias and the TAT model under negative bias

Fig. 8 Scheme and experiment for full-wave rectifier bridge (a) Test scheme for full-wave rectifier bridge; (b) Circuit scheme for full-wave rectifier bridge; (c) Structure schematic of full-wave rectifier bridge; (d) Layout diagram of full wave rectifier circuit (left) and corresponding rectification result (right); (e-g) Normalized full-wave rectification results of full-wave rectifier based on the TiN/ZnO/Pt FTDs with Vpp=1.5 V at frequencies of 1 (e), 2 (f) and 5 Hz (g), respectively

Table 2 Parameters of the ideal physical model of FTD

Parameter	Description	Unit	Value
TOX	Thickness of tunneling layer	Å	100
IF	Forward Fowler-Nordheim current coefficient	A/V²	5×10^-16
IR	Reverse Fowler-Nordheim current coefficient	A/V²	1×10^-16
EF	Forward critical electric field	V/cm	2×10⁶
ER	Reverse critical electric field	V/cm	2×10⁸
L	Diode length	m	2×10^-8
W	Diode width	m	5×10^-4

Fig. 9 SPICE simulations for the full-wave rectifier bridge based FTDs with a frequency of 100 GHz and Vpp=2 V

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基于金属-半导体-金属鳍式隧穿二极管的高频整流桥电路

A Rectifier Bridge Circuit Based on Metal-semiconductor-metal Fin Tunneling Diode for High-frequency Application

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