3C-SiC晶体制备研究进展

doi:10.15541/jim20250081

摘要/Abstract

摘要： 碳化硅(SiC)作为一种典型的宽禁带半导体材料,在大功率、高频、高温电子器件应用中的重要性日益凸显。近年来,SiC半导体已成为新能源汽车中电驱动模块和充电模块的主要功率器件材料,相比Si基的绝缘栅极双极型晶体管(Insulated Gate Bipolar Transistors, IGBTs)少数载流子器件,SiC材料能够以高频器件结构的多数载流子器件(肖特基势垒二极管和MOSFET)实现高耐压,从而同时具有高耐压、低导通电阻、高频的特性。未来,SiC在交通新能源电动航空器及低空经济中的电动垂直起降航空器(Electric Vertical Take-off and Landing, eVTOL)、AR、光伏逆变与轨道交通等领域也将扮演不可或缺的角色。在众多SiC晶型中,3C-SiC具有独特的立方结构,并且有更高的热导率(500 W/(m·K))与沟道迁移率(约300 cm²/(V·s)),展现了显著的应用潜力和研究价值。本文概述了3C-SiC晶体结构特点、基本物理特性、应用优势以及主要生长方法,包括化学气相沉积法(CVD)、持续供料物理气相传输法(CF-PVT)、升华外延法(SE)和顶部籽晶溶液法(TSSG),并综述了以上几种技术方法制备3C-SiC晶体的研究进展与最新成果,重点分析讨论了气相和液相生长方法的热力学特性与生长机理,并对微观层面的晶体生长过程进行了分析总结,展望了3C-SiC晶体未来发展和应用方向。

关键词: 宽禁带半导体, 3C-SiC晶体, 晶体生长, 微观机理, 综述

Abstract: Silicon carbide (SiC), as a representative wide bandgap semiconductor material, has increasingly demonstrated its significance in high-power, high-frequency, and high-temperature electronic device applications. In recent years, SiC semiconductors have become the primary material for power devices in electric drive modules and charging modules of new energy vehicles. Compared to Si-based Insulated Gate Bipolar Transistors (IGBTs), which are minority carrier devices, SiC materials enable high-voltage resistance through majority carrier devices (such as Schottky Barrier Diodes and MOSFETs) with high-frequency device structures. This allows SiC to simultaneously achieve the three key characteristics of high voltage resistance, low on-resistance, and high frequency. In the future, SiC will also play an indispensable role in emerging fields such as electric aircraft and electric vertical take-off and landing (eVTOL) vehicles in low-altitude transportation, augmented reality (AR), photovoltaic inverters, and rail transportation. Among the various SiC polytypes, 3C-SiC stands out due to its unique cubic crystal structure, higher thermal conductivity (500 W/(m·K)), and channel mobility (approximately 300 cm²/(V·s)), showcasing significant application potential and research value. This paper provides an overview of the crystal structure, fundamental physical properties, application advantages, and major growth methods of 3C-SiC, including Chemical Vapor Deposition (CVD), Continuous-Feed Physical Vapor Transport (CF-PVT), Sublimation Epitaxy (SE), and Top-Seeded Solution Growth (TSSG). The research progress and latest achievements in 3C-SiC crystal growth using these techniques are reviewed, with a focus on the thermodynamic characteristics and growth mechanisms of vapor-phase and liquid-phase methods. The microscopic processes of crystal growth are analyzed and summarized, and future development directions and application prospects for 3C-SiC crystals are discussed.

Key words: wide bandgap semiconductor, 3C-SiC single crystal, crystal growth, micro-mechanism, review

中图分类号:

TQ174

徐锦涛, 高攀, 何唯一, 蒋圣楠, 潘秀红, 汤美波, 陈锟, 刘学超. 3C-SiC晶体制备研究进展[J]. 无机材料学报, DOI: 10.15541/jim20250081.

XU Jintao, GAO Pan, HE Weiyi, JIANG Shengnan, PAN Xiuhong, TANG Meibo, CHEN Kun, LIU Xuechao. Recent Progress in Preparation of Single Crystal 3C-SiC[J]. Journal of Inorganic Materials, DOI: 10.15541/jim20250081.

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