Journal of Inorganic Materials ›› 2024, Vol. 39 ›› Issue (5): 554-560.DOI: 10.15541/jim20230524

Special Issue: 【信息功能】大尺寸功能晶体(202409)

• RESEARCH LETTER • Previous Articles     Next Articles

Growth and Characterization of Large-size InSe Crystal from Non-stoichiometric Solution via a Zone Melting Method

JIN Min1(), MA Yupeng2, WEI Tianran2, LIN Siqi1, BAI Xudong3, SHI Xun4, LIU Xuechao4()   

  1. 1. School of Materials Science, Shanghai Dianji University, Shanghai 201306, China
    2. School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
    3. Wuzhen Laboratory, Tongxiang 314500, China
    4. Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
  • Received:2023-11-09 Published:2024-05-20 Online:2024-03-08
  • Contact: LIU Xuechao, professor. E-mail: xcliu@mail.sic.ac.cn
  • About author:JIN Min (1982-), male, professor. E-mail: jmaish@aliyun.com
  • Supported by:
    National Natural Science Foundation of China(52272006);National Natural Science Foundation of China(52371193);National Natural Science Foundation of China(52001231);Shanghai Academic/Technology Research Leader(23XD1421200);Oriental Scholars of Shanghai Universities(TP2022122);Space Application System of China Manned Space Program, Shanghai Rising-star Program(23QA1403900);Open Research Fund of Key Laboratory of Polar Materials and Devices, Ministry of Education

Abstract:

Indium selenide (InSe) is a III-VI group semiconductor with interesting physical properties and has wide potential applications in the fields of photovoltaics, optics, thermoelectrics, and so on. However, the production of large-size InSe crystal is difficult due to the inconsistent melting of In and Se elements and peritectic reactions between InSe, In6Se7 and In4Se3 phases. In this work, a zone melting method, which has advantages of low cost and solid-liquid interface optimization, is employed for InSe crystal preparation. Because the initial mole ratio of In to Se is of great importance to InSe crystal growth, the non-stoichiometric In0.52Se0.48 solution was precisely used for growth based on the peritectic reaction of In-Se system, resulting in a InSe crystal productivity ratio at about 83%. An ingot with dimensions ϕ27 mm×130 mm is obtained with a typical slab-like InSe crystal in the size of ϕ27 mm×50 mm. The successfully peeled cleavage plane exhibits the good single-crystalline character as only (00l) peaks are detected in the X-ray diffraction pattern. This crystal has a hexagonal structure, and its elements are distributed uniformly in the matrix with transmittance of ~55.1% at 1800 nm wavelength, band gap energy of about 1.22 eV, a maximum electrical conductivity (σ) of about 1.55×102 S·m-1 along the (001) direction, and a lowest thermal conductivity (κ) of about 0.48 W·m-1·K-1 perpendicular to the (001) direction at 800 K. These results imply that the zone melting method is indeed an effective approach for fabricating large-size InSe crystal, which could be applied for various fields. Above measured electrical and thermal behaviors are expected to provide a significant reference for InSe crystal application in the future.

Key words: InSe crystal, zone melting method, non-stoichiometric, electrical conductivity, thermal conductivity

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