Porous SiC Ceramic Matrix Composite Reinforced by SiC Nanowires with High Strength and Low Thermal Conductivity

doi:10.15541/jim20210230

Abstract

Abstract:

Porous design of SiC composites with lightweight, high strength and low thermal conductivity can be obtained by constructing porous silicon carbide nanowires (SiCNWs) network and controlling chemical vapor infiltration (CVI) process. The SiCNWs network with an optimized volume fraction (15.6%) and uniform pore structure was prepared by mixing SiCNWs and polyvinyl alcohol (PVA) firstly. SiCNWs reinforced porous SiC ceramic matrix composite (SiCNWs/SiC) with a small uniform pore can be obtained by controlling the CVI parameters. The morphology of the grown SiC matrix, from the spherical particles to the hexagonal pyramid particles, can be influenced by the CVI parameters, such as temperature and reactive gas concentration. The strength of the SiCNWs/SiC ceramic matrix composites reaches (194.3±21.3) MPa with a porosity of 38.9% and thermal conductivity of (1.9± 0.1) W/(m·K), which shows the toughening effect and low thermal conductivity design.

Key words: SiC ceramic matrix composite, silicon carbide nanowire, CVI parameter, porosity, thermal conductivity

CLC Number:

TQ174

RUAN Jing, YANG Jinshan, YAN Jingyi, YOU Xiao, WANG Mengmeng, HU Jianbao, ZHANG Xiangyu, DING Yusheng, DONG Shaoming. Porous SiC Ceramic Matrix Composite Reinforced by SiC Nanowires with High Strength and Low Thermal Conductivity[J]. Journal of Inorganic Materials, 2022, 37(4): 459-466.

Figures/Tables 8

Fig. 1 Surface morphologies of the SiCNWs/PVA film (a), SiCNWs network without PyC and SiC deposition (b), surface morphologies of sample without (c) and with (d) PyC interphase after short time CVI process, and without (e) and with (f) PyC interphase after a long time CVI process

Fig. 2 Growth morphology of SiC matrix CVI deposited at temperatures of (a) 950 ℃, (b) 1030 ℃, and (c) 1100 ℃

Fig. 3 SEM images of the prepared SiCNWs/SiC ceramic matrix composites (a) External surface view of the sample under 8 h CVI process at 1030 ℃; (b) Fracture surface view and (c) corresponding enlarged region of the sample under 8 h CVI process at 1030 ℃; (d) External surface view of the sample under 8 h CVI process at 1100 ℃; (e) Fracture surface view and (f) corresponding enlarged region of the sample under 8 h CVI process at 1100 ℃

Fig. 4 Cumulative pore volume distribution with different pore size

Fig. 5 Changes of strength and thermal conductivity with porosity of porous SiCNWs/SiC ceramic matrix composite

Table 1 Strength and thermal conductivity of different materials

Materials	Porosity/%	Strength /MPa	Thermal conductivity/(W·m^-1·K^-1)	Ref.
Porous SiC-SiO₂ ceramic	~72	~2.7	0.066	[37]
Sc-doped porous SiC ceramic	~61%	10.5	7.700	[38]
Porous Al₂O₃-SiC	~38	28.0	-	[39]
Porous ZrB₂-SiC ceramics	~59%	~78.0	-	[40]
Porous SiC ceramic	~40%	~10.7	0.580	[41]
Porous SiCNWs/SiC ceramic matrix composite	~39%	~194.3	1.900	This work
Porous SiCNWs/SiC ceramic matrix composite	~62%	~49.0	1.600	This work

Fig. 6 Biaxial bending strength of the SiCNWs/SiC ceramic matrix composite with or without PyC interphase

Fig. 7 Fracture morphologies of the SiCNWs/SiC ceramic matrix composite (a) Without interphase; (b) With PyC interphase

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