Journal of Inorganic Materials ›› 2022, Vol. 37 ›› Issue (2): 209-214.DOI: 10.15541/jim20200738

Special Issue: 【能源环境】热电材料

• RESEARCH ARTICLE • Previous Articles     Next Articles

Thermal and Electrcial Transport Properities of Ge Doped MnTe Thermoelectrics

LOU Xunuo, DENG Houquan, LI Shuang, ZHANG Qingtang, XIONG Wenjie, TANG Guodong   

  1. School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
  • Received:2020-12-24 Revised:2021-02-02 Published:2022-02-20 Online:2021-03-12
  • Contact: TANG Guodong, professor. E-mail:
  • About author:LOU Xunuo(1996-), male, Master candidate. E-mail:
  • Supported by:
    National Natural Science Foundation of China (52071182); “Qinglan Project” of the Young and Middle-aged Academic Leader of Jiangsu Province

Abstract: MnTe is a promising candidate for the p-type lead-free thermoelectric material in middle temperature application. However, its thermoelectric performance isn’t qualified for some conventional n-type materials to form efficient thermoelectric devices. In this study, Mn1.06-xGexTe (x=0, 0.01, 0.02, 0.03, 0.04) polycrystalline block samples with different Ge doping contents were efficiently synthesized by vacuum melting quenching and spark plasma sintering. The as-obtained Mn1.06-xGexTe bulk was dense and consisted of homogeneous composition. Tiny extensive Mn can effectively restrict the formation of the second phase of MnTe2 and improve the thermoelectric properties of the matrix phase. Electrical conductivity of the materials increasing to 7×103 S∙cm-1 results from the enhanced carrier concentration 7.328×1018 cm-3 at 873 K, which contributed to a power factor of 620 μW∙m-1∙K-2 by 4% Ge doping. Meanwhile, Mn1.06-xGexTe showed the reduced thermal conductivity of 0.62 W∙m-1∙K-1 by enhanced phonons scattering intensified with point defects, realizing the effective regulation of both electrical- and thermal-transport properties. Mn1.02Ge0.04Te achieved a thermoelectric performance of 0.86 at 873 K, which evolved by 43% compared with the pristine sample.

Key words: MnTe thermoelectric material, Ge doping, carrier concentration, lattice thermal conductivity

CLC Number: