Research Progress on Controllable Synthesis of Blue-emitting ZnSeTe Quantum Dots and Quantum-dot Light-emitting Diode Devices

doi:10.15541/jim20260115

Abstract

Abstract:

Colloidal quantum dots (QDs) are promising emissive materials for optoelectronic devices owing to their tunable emission wavelength, high color purity, and solution processability. Quantum-dot light-emitting diodes (QLEDs), an important complementary technology to organic light-emitting diodes, have demonstrated considerable potential in display applications. However, the inherent toxicity of conventional Cd- and Pb-based QDs has driven the development of heavy-metal-free QDs systems. Currently, heavy-metal-free blue QLEDs still lag significantly behind their red and green counterparts in device efficiency and operational stability, representing a critical bottleneck to their practical application. To address this issue, ZnSeTe QDs have attracted significant research interest due to their tunable bandgap and excellent blue emission properties. In this work, a comprehensive review of ZnSeTe QDs is provided. Firstly, their nucleation and growth mechanisms, as well as typical synthesis methods are introduced, and the key factors affecting their optical properties are discussed. On this basis, various performance optimization strategies, including band engineering, surface etching, shell passivation, and ligand regulation, are systematically summarized. Furthermore, electroluminescence mechanisms of QLEDs and recent progress on the application of ZnSeTe QDs in blue-emitting devices are reviewed. Finally, the current challenges, such as low emission efficiency, limited device lifetime, and charge injection imbalance, are discussed, and potential future development directions are proposed.

Key words: blue quantum dot, quantum-dot light-emitting diode, ZnSeTe, core-shell engineering, ligand engineering, review

CLC Number:

TQ174

FEI Wenlong, WANG Yakun, LIAO Liangsheng. Research Progress on Controllable Synthesis of Blue-emitting ZnSeTe Quantum Dots and Quantum-dot Light-emitting Diode Devices[J]. Journal of Inorganic Materials, 2026, 41(7): 867-882.

Figures/Tables 8

Fig. 1 Synthesis of QDs[32,35] (a) Schematic illustration of QDs formation process[32]; (b) Schematic diagram of the mechanism for the classic LaMer model[32]; (c) Size distribution of crystal embryos following the Maxwell-Boltzmann distribution[32]; (d) Evolution of diffusion radius (Rdif) versus nanocrystal radius[32]; (e) Schematic illustration of ZnSeTe QDs synthesis[35]; (f) Absorption spectra of ZnSeTe QDs at different temperatures[35]; (g) Transmission electron microscope (TEM) image of ZnSeTe QDs[35]

Fig. 2 Band engineering optimization of QDs[28,41 -43] (a) Normalized photoluminescence (PL) spectra of ZnSeTe QDs synthesized at different Te/Se molar ratios (0-0.1)[41]; (b) Absorption and PL spectra of ZnSeTe/ZnSe/ZnS QDs with different compositions[42]; (c) Dependence of the calculated optical band gap of ZnSeTe QDs on composition and size[43]; (d) XRD patterns of ZnSeTe QDs synthesized at different Te/Se molar ratios (0-0.1)[41]; (e) Schematic illustration of shallow-level defect states; (f) Band structures and electronic energy level distributions of ZnSe/ZnSeTe/ZnSe/ZnS QDs without nearest-neighbor Te atom pairs (left) and with nearest-neighbor Te atom pairs (right)[43]; (g) Structural models and aberration-corrected TEM images of ZnSeTe and ZnSeTeS QDs[28]; (h) Electroluminescence (EL) spectra of QLED devices based on ZnSeTe and ZnSeTeS QDs with the C/S/S structure[28]

Fig. 3 Surface etching optimization of QDs[42,46 -49] (a) Schematic illustration of ZnTeSe etching by HF and ZnCl2[42]; (b) TEM images and PLQY of ZnTeSe/ZnSe with different HF etching dosages[46]; (c) Absorption and PL spectra of ZnTeSe/ZnSe/ZnS treated with different HF etching dosages[46]; (d) Schematic diagram of the HF-like species generation mechanism from benzoyl fluoride[47]; (e) Schematic illustration of ZnTeSe etching by ZnCl2[48]; (f) Schematic illustration of ZnTeSe etching by NH4F[49]

Fig. 4 Core-shell engineering of QDs[54-56] (a) TEM images and corresponding sizes of ZnSeTe/thin-, medium-, and thick-ZnSe/ZnS QDs[54]; (b) Normalized PL spectra of QDs as a function of the thickness of ZnSe inner shell[54]; (c) PL emission peak positions, PLQY and FWHM[54]; (d, e) Transient absorption spectra of (d) ZnSeTe/thin-ZnSe/ZnS and (e) ZnSeTe/thick-ZnSe/ZnS[55]; (f) Bleach recovery kinetic processes of ZnSeTe/thin-ZnSe/ZnS and ZnSeTe/thick-ZnSe/ZnS[55]; (g) PL emission peak of QDs varying with the thickness of ZnSe inner shell[54]; (h) Schematic illustration of ZnSe shell growth prepared by the stepwise injection method and one-pot continuous injection method[56]; (i) Schematic illustration of the quantum dot size and size distribution after the second monomer supply in the stepwise injection method[56]

Fig. 5 Surface ligand engineering of QDs[42,48,57,64,66 -67,72] (a) Ligand exchange mechanism of halogen anions[64]; (b) Schematic illustration of the ligand exchange process of ZnCl2 in the liquid phase, and the further solid phase ligand exchange process achieved by thin film washing treatment[42]; (c) PL spectra of the as-synthesized QDs and brominated QDs[66]; (d) DOS of ZnS shell on the surfaces of the as-synthesized QDs and brominated QDs[66]; (e) DOS of ZnS shell on the surfaces of the as-synthesized QDs and iodinated QDs[67]; (f) PLQY stability of the as-synthesized ZnSeTe/ZnSe/ZnS QDs and those treated with DDT under ambient conditions[48]; (g) Time-resolved photoluminescence (TRPL) spectra of the untreated ZnSeTe/ZnSe/ZnS QDs and those treated with POT2T[72]; (h) Schematic illustration of the ligand exchange process of DDTC[57]

Fig. 6 Device structure and operation mechanism of QLED devices[74] (a, b) Device architectures of QLEDs with (a) conventional and (b) inverted structures; (c) Schematic illustration of optical excitation; (d) Schematic illustration of charge injection; (e) Schematic illustration of energy transfer; (f) Schematic illustration of ionization; (g) Schematic illustration of the EL mechanism of QLEDs

Table 1 Performance comparison of blue QLEDs based on ZnSeTe QDs[28,37,42,47,49,54 -56,65,68,91 -93]

Material	PL/nm	Luminance/ (cd·m^-2)	EQE_max/%	T₅₀	Ref.
ZnSeTe	465	1500	4	-	[47]
ZnSeTe	460	3516	14.7	52.7 h@ 100 cd·m^-2	[65]
ZnSeTe	448	10240	10.9	-	[56]
ZnSeTe	450	2904	9.5	-	[37]
ZnSeTe	462	13677	17.2	-	[49]
ZnSeTe	457	12654	18.6	-	[54]
ZnSeTe	465	39739	17.1	8824 h@ 100 cd·m^-2	[91]
ZnSeTe	457	88900	20.2	15850 h@ 100 cd·m^-2	[42]
ZnSeTeS	460	36850	24.7	~30000 h@ 100 cd·m^-2	[28]
ZnSeTe	452	-	23.6	~50000 h@ 100 cd·m^-2	[68]
ZnSeTe	456	13670	17.5	5.1 h@ 1000 cd·m^-2	[92]
ZnSeTe	455	6017	20.8	130.7 h@ 100 cd·m^-2	[93]
ZnSeTe	452	N/A	18	49.1 h@ 100 cd·m^-2	[55]

Fig. 7 Performance optimization of QLED devices[28,42,91 -93,97] (a) Operational lifetimes of QLED devices based on ZnSeTe/ZnSe/ZnS and ZnSeTeS/ZnSe/ZnS QDs[28]; (b) EL spectra of ZnCl2-treated ZnSeTe/ZnSe/ZnS QLEDs[42]; (c) Luminance-current density curves of ZnSeTe/ZnSe/ZnS QLEDs with different shell thicknesses[91]; (d) PL spectra of CB functionalized ZnMgO nanoparticles at different CB addition amounts[91]; (e) Impedance spectra of ZnSeTe-based QLEDs using ZnMgO, ZnMgO-Cl and ZnMgO-Cl@Mg(OH)2 as ETL[92]; (f) Current density-voltage (J-V) curves of ITO/ZnO/Al, ITO/ZnO/SnO2/Al and ITO/ZnO/FD-SnO2/Al thin films[93]; (g) Theoretically optimized molecular configuration and reorganization energy of PF8Cz[97]; (h) EL spectra of green and blue QLEDs with PF8Cz as HTL and TFB as HTL[97]; (i) Schematic illustration of the energy band structures of ZnSeTe-based QLEDs with a PF8Cz HTL[28]

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