Recent Progress on Preparation of 3C-SiC Single Crystal

doi:10.15541/jim20250081

Abstract

Abstract:

Silicon carbide (SiC), as a representative wide bandgap semiconductor material, has increasingly demonstrated its significance in high-power, high-frequency and high-temperature electronic device applications. In recent years, SiC semiconductors have become primary material for power devices in electric drive modules and charging modules of new energy vehicles. Compared to Si-based insulated gate bipolar transistors (IGBTs), a kind of minority carrier device, SiC materials enable high-voltage resistance through majority carrier devices (such as Schottky barrier diodes and metal-oxide-semiconductor field-effect transistors (MOSFETs)) with high-frequency device structures, which conversely allows SiC to simultaneously achieve key characteristics of low on-resistance and high frequency. It is easy to deduce that, SiC will also play an indispensable role in emerging fields such as electric aircrafts, electric vertical take-off and landing (eVTOL) vehicles for low-altitude transportation, augmented reality (AR), photovoltaic inverters, and rail transportation. Among various SiC polytypes, 3C-SiC stands out due to its unique cubic crystal structure, higher thermal conductivity (500 W/(m·K)) and channel mobility (approximately 300 cm²/(V·s)), showcasing significant application potential and research value. This paper provides an overview of the crystal structure, fundamental physical properties, application advantages, and major growth methods of 3C-SiC, including chemical vapor deposition (CVD), continuous-feed physical vapor transport (CF-PVT), sublimation epitaxy (SE), and top-seeded solution growth (TSSG). Research progress and the latest achievements in 3C-SiC crystal growth using above techniques are reviewed, focusing on the thermodynamic characteristics and growth mechanisms of vapor-phase and liquid-phase methods. The microscopic processes of crystal growth are analyzed and summarized, and the future development directions and application prospects for 3C-SiC crystals are discussed.

Key words: wide bandgap semiconductor, 3C-SiC single crystal, crystal growth, micro-mechanism, review

CLC Number:

TQ174

XU Jintao, GAO Pan, HE Weiyi, JIANG Shengnan, PAN Xiuhong, TANG Meibo, CHEN Kun, LIU Xuechao. Recent Progress on Preparation of 3C-SiC Single Crystal[J]. Journal of Inorganic Materials, 2026, 41(1): 1-11.

Figures/Tables 13

References 87

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Property	Si	3C-SiC	4H-SiC	6H-SiC	Ref.
Stacking sequence	—	ABC	ABCB	ABCACB	[2]
Crystal structure	Diamond structure	Zinc blende structure	Wurtzite structure	Wurtzite structure	[7]
Bandgap/eV	1.12	2.36	3.26	3.02	[2]
Lattice constant, a/nm	0.54310	0.43596	0.30798	0.30805	[2]
Lattice constant, c/nm	0.54310	0.43596	1.00820	1.51151	[2]
Density/(g·cm^-3)	2.329	3.166	3.211	3.211	[2]
Melting point, T_m/K	1685	3103	3103	3103	[8]
Electrical resistivity (n-type)/(Ω·cm)	0.4-1.6	≤0.0006	0.015-0.025	0.015-0.025	[9-10]
Electron mobility/(cm²·V^-1·s^-1)	1450	1000	800 (//C axis) 1000 (⊥C axis)	450 (//C axis) 200 (⊥C axis)	[2]
Hole mobility/(cm²·V^-1·s^-1)	500	100	120	100	[2]
Electron saturated drift velocity/ (cm·s^-1)	1×10⁷	2×10⁷	2.2×10⁷	1.9×10⁷	[2]
Hole saturated drift velocity/(cm·s^-1)	—	1.3×10⁷	1.3×10⁷	1.3×10⁷	[2]
Relative dielectric constant	11.9	9.72 (//C axis) 9.72 (⊥C axis)	10.32 (//C axis) 9.76 (⊥C axis)	10.03 (//C axis) 9.66 (⊥C axis)	[2]
Thermal conductivity/(W·cm^-1·K^-1)	1.56	3.3-4.9	3.3-4.9	3.3-4.9	[2]
Coefficient of thermal expansion, α/ (×10^-6, K^-1)	2.59	3.8	4.7 (//C axis) 4.3 (⊥C axis)	4.7 (//C axis) 4.3 (⊥C axis)	[8]
Young modulus/GPa	130-188	310-550	390-690	390-690	[2]
Poisson’s ratio	0.064-0.28	0.24	0.21	0.21	[2]

Property	Si	3C-SiC	4H-SiC	6H-SiC	Ref.
Stacking sequence	—	ABC	ABCB	ABCACB	[2]
Crystal structure	Diamond structure	Zinc blende structure	Wurtzite structure	Wurtzite structure	[7]
Bandgap/eV	1.12	2.36	3.26	3.02	[2]
Lattice constant, a/nm	0.54310	0.43596	0.30798	0.30805	[2]
Lattice constant, c/nm	0.54310	0.43596	1.00820	1.51151	[2]
Density/(g·cm^-3)	2.329	3.166	3.211	3.211	[2]
Melting point, T_m/K	1685	3103	3103	3103	[8]
Electrical resistivity (n-type)/(Ω·cm)	0.4-1.6	≤0.0006	0.015-0.025	0.015-0.025	[9-10]
Electron mobility/(cm²·V^-1·s^-1)	1450	1000	800 (//C axis) 1000 (⊥C axis)	450 (//C axis) 200 (⊥C axis)	[2]
Hole mobility/(cm²·V^-1·s^-1)	500	100	120	100	[2]
Electron saturated drift velocity/ (cm·s^-1)	1×10⁷	2×10⁷	2.2×10⁷	1.9×10⁷	[2]
Hole saturated drift velocity/(cm·s^-1)	—	1.3×10⁷	1.3×10⁷	1.3×10⁷	[2]
Relative dielectric constant	11.9	9.72 (//C axis) 9.72 (⊥C axis)	10.32 (//C axis) 9.76 (⊥C axis)	10.03 (//C axis) 9.66 (⊥C axis)	[2]
Thermal conductivity/(W·cm^-1·K^-1)	1.56	3.3-4.9	3.3-4.9	3.3-4.9	[2]
Coefficient of thermal expansion, α/ (×10^-6, K^-1)	2.59	3.8	4.7 (//C axis) 4.3 (⊥C axis)	4.7 (//C axis) 4.3 (⊥C axis)	[8]
Young modulus/GPa	130-188	310-550	390-690	390-690	[2]
Poisson’s ratio	0.064-0.28	0.24	0.21	0.21	[2]

Method	Year	Institution	Size	Thickness	Growth rate/ (μm·h^-1)	Innovation point	Quality	Ref.
CVD	1983	Kyoto University	~5 cm²	34 μm	2.5	Two-step growing process	No other crystal type	[41]
	2002-2004	HOYA Company	10 cm²	200 μm	40	Wavy Si substrate	Eliminate planar defects APBs	[43-46]
	2009-2010	CNR-IMM	φ6 inch	7 μm	6.5	Si(111) surfaces are used	Surface and interface are flat with SF as low as 104 cm^-1	[47-48]
	2017-2023	Wuhan University	1.5 cm²	10 μm	30	LCVD	The twin defect density is low and the crystal quality is excellent	[37, 49-51]
CF-PVT	2005-2006	Ecole Polytechnique de Grebnol	φ3 cm	400 μm	68	3C-SiC crystal without BPD	A lot of twins, layer fault	[60-61]
SE	2013-2015	Linköping University	0.49 cm²	1 mm	600	Grow on 4H-SiC	FWHM ranges from 26 to 56 arcsec	[65-67]
SE	2019	FAU University of Erlangen-Nuremberg	φ2 inch	320-520 μm	190-320	Grow directly on the 3C-SiC seed	FWHM ranges from 138 to 140 arcsec	[19, 69]
TSSG	2010	French National Institute of Scientific Research	—	500 μm	23	Grow directly on the 3C-SiC seed	SFs and dislocation densities up to 108 cm^-2	[78-79]
TSSG	2024	Institute of Physics, Chinese Academy of Sciences	φ2-4 inch	4-10 mm	50-113	Using 4H-SiC as the seed, N₂ is blown in	FWHM is 30 arcsec and surface defect density is 92.2 cm^-1	[81]

Method	Year	Institution	Size	Thickness	Growth rate/ (μm·h^-1)	Innovation point	Quality	Ref.
CVD	1983	Kyoto University	~5 cm²	34 μm	2.5	Two-step growing process	No other crystal type	[41]
	2002-2004	HOYA Company	10 cm²	200 μm	40	Wavy Si substrate	Eliminate planar defects APBs	[43-46]
	2009-2010	CNR-IMM	φ6 inch	7 μm	6.5	Si(111) surfaces are used	Surface and interface are flat with SF as low as 104 cm^-1	[47-48]
	2017-2023	Wuhan University	1.5 cm²	10 μm	30	LCVD	The twin defect density is low and the crystal quality is excellent	[37, 49-51]
CF-PVT	2005-2006	Ecole Polytechnique de Grebnol	φ3 cm	400 μm	68	3C-SiC crystal without BPD	A lot of twins, layer fault	[60-61]
SE	2013-2015	Linköping University	0.49 cm²	1 mm	600	Grow on 4H-SiC	FWHM ranges from 26 to 56 arcsec	[65-67]
SE	2019	FAU University of Erlangen-Nuremberg	φ2 inch	320-520 μm	190-320	Grow directly on the 3C-SiC seed	FWHM ranges from 138 to 140 arcsec	[19, 69]
TSSG	2010	French National Institute of Scientific Research	—	500 μm	23	Grow directly on the 3C-SiC seed	SFs and dislocation densities up to 108 cm^-2	[78-79]
TSSG	2024	Institute of Physics, Chinese Academy of Sciences	φ2-4 inch	4-10 mm	50-113	Using 4H-SiC as the seed, N₂ is blown in	FWHM is 30 arcsec and surface defect density is 92.2 cm^-1	[81]