Journal of Inorganic Materials ›› 2026, Vol. 41 ›› Issue (6): 681-688.DOI: 10.15541/jim20250437
• PERSPECTIVE • Previous Articles Next Articles
FENG Hengyang1(
), WEI Tianran1(
), QIU Pengfei2, SHI Xun2(
)
Received:2025-10-31
Revised:2025-12-17
Published:2026-06-20
Online:2025-12-22
Contact:
WEI Tianran, professor. E-mail: tianran_wei@sjtu.edu.cn;About author:FENG Hengyang (2000-), male, PhD candidate. E-mail: dajingfhy@sjtu.edu.cn
Supported by:CLC Number:
FENG Hengyang, WEI Tianran, QIU Pengfei, SHI Xun. Ultra-large Macroscopic Plastic Deformation and Metalworking in Inorganic Semiconductors[J]. Journal of Inorganic Materials, 2026, 41(6): 681-688.
| Material | Band gap/eV | Elongation/% | |
|---|---|---|---|
| Ag2S | 1.0[ | 4.2[ | |
| Ag2S0.3Te0.7 | ~0.11[ | 107[ | |
| Ag2S0.4Te0.6 | ~0.11[ | 75[ | |
| Ag2S0.5Te0.5 | ~0.12[ | 52[ | |
| Ag2S0.5Se0.5 | 0.28[ | 25[ | |
| Ag2S1/3Se1/3Te1/3 | ~0.30[ | 97[ | |
| InSe | 1.2[ | 12[ | |
| GaSe | 2.1[ | 11[ | |
| MoS2 | 1.3[ | 9[ | |
| SnSe2 | 0.90[ | 6[ | |
| Defective Bi2Te3 | 0.15[ | 8[ | |
| CrSiTe3 | 0.4[ | 12[ | |
| Mg3Sb2 | 0.41[ | 7.4[ | |
| Mg3Bi2 | 0[ | 100[ | |
| AgCl | 3.2[ | 34[ | |
| AgBr | 2.7[ | 52[ | |
Table 1 Room-temperature elongation versus band gap of ductile inorganic semiconductors in the macroscopic bulk form[6,8,12 -13,15 -18,28,30 -38]
| Material | Band gap/eV | Elongation/% | |
|---|---|---|---|
| Ag2S | 1.0[ | 4.2[ | |
| Ag2S0.3Te0.7 | ~0.11[ | 107[ | |
| Ag2S0.4Te0.6 | ~0.11[ | 75[ | |
| Ag2S0.5Te0.5 | ~0.12[ | 52[ | |
| Ag2S0.5Se0.5 | 0.28[ | 25[ | |
| Ag2S1/3Se1/3Te1/3 | ~0.30[ | 97[ | |
| InSe | 1.2[ | 12[ | |
| GaSe | 2.1[ | 11[ | |
| MoS2 | 1.3[ | 9[ | |
| SnSe2 | 0.90[ | 6[ | |
| Defective Bi2Te3 | 0.15[ | 8[ | |
| CrSiTe3 | 0.4[ | 12[ | |
| Mg3Sb2 | 0.41[ | 7.4[ | |
| Mg3Bi2 | 0[ | 100[ | |
| AgCl | 3.2[ | 34[ | |
| AgBr | 2.7[ | 52[ | |
Fig. 1 Metal-like plastic processing of inorganic semiconductors[10,42,52,59] (a) Schematic diagram of processing, including rolling, extrusion and flatbed press[52]; (b, c) Iterative rolling and drawing of Ag2Te0.6S0.4[42]; (d) Room temperature twisted deformation of Ag2S0.7Te0.3[10]; (e) Warm rolling of Ag2Se film[52]; (f, g) Warm extrusion and flatbed processing of Cu2Se[52]; (h) Warm stamping of Bi0.85Sb0.15[59]
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