Perspective of MXetronics

doi:10.15541/jim20230323

Abstract

Abstract:

Atomic-thin transition metal carbonitrides (MXenes), as an emerging class of two-dimensional (2D) materials, become a highly active research topic. Since the discovery of graphene nearly 20 years ago, many 2D materials (graphene, transition metal dichalcogenides, and black phosphorus) have been extensively studied in the field of micro-nano electronics. However, research on MXenes-based micro-nano electronics has just begun. MXenes exhibit rich elemental compositions and unique physicochemical properties, such as hydrophilicity, tunable work function, adjustable functional groups, fast ion and electron transport, superconductivity, surface plasmons, photo- thermo-electricity, and electromagnetic absorption, and some MXenes even possess high conductivity. These characteristics make MXenes hold great potential for device applications at the microscale or even nanoscale. In recent years, the Alshareef research group has been dedicated to bringing MXenes into the field of micro-nano electronics and has defined the emerging academic field of MXene electronics, known as MXetronics, in 2019. This perspective briefly summarizes and evaluates representative research progress in this field, including the challenges in synthesis, processing, property investigation, and device applications at the microelectronic level. Furthermore, we will propose several key research directions and unexplored subfields in this area.

Key words: MXenes, nano-electronics, thin film, nanofabrication, synthesis, transistor, perspective

CLC Number:

O646

XU Xiangming, Husam N ALSHAREEF. Perspective of MXetronics[J]. Journal of Inorganic Materials, 2024, 39(2): 171-178.

Figures/Tables 6

Fig. 1 Schematic diagram of MXetronics[2] From properties, synthesis, and processing of MXenes to their applications in macro & micro & nano electronics

Fig. 2 Structure and physical properties of MXenes (a) Lattice structure of representative MXene Ti3C2Tx showing fast electron and ion transport; (b) Breakdown current of Ti3C2Tx compared with the other metals and semiconductors[4]; (c) Semiconductive MXene Sc2CTx with different surface groups (-F, -OH, =O)[5]; (d) Low-temperature properties of Nb2CTx MXene with different surface groups, Nb2CS2 and Nb2CSe2 showing the superconductive transition[6]; (e) Calculated work function of various MXenes with different surface groups[7]; (f) EELS mappings showing MXene with different light response phenomena, which is surface plasmonic effect, including inter-band transition mode, transversal and longitudinal surface plasmons modes[8]

Fig. 3 Three methods to synthesize MXenes (a) Aqueous acid etching[15]; (b) Molten salt etching[13]; (c) Direct CVD growth[14]

Fig. 4 Normal printing and high-resolution processing of MXenes (a) Various printing technologies to be used for MXene low-resolution patterning, usually above hundreds micrometer scale[16]; (b) MXene thin film processing and high-resolution patterning techniques[1]

Fig. 5 MXene-based micro or nanoelectronic devices and their integration (a) Ti3C2Tx MXene as source/drain/gate contact in 2D nano-electronics[28]; (b) Ti3C2Tx MXene-gate for high-performance GaN high-electron-mobility transistors (HEMTs)[24]; (c) HEMTs MXene-derived MOF as the patternable ionic gate in MoS2 electron-double layer transistor[21]; (d) Partially oxidized Ti3C2Tx as floating gat in flash memory transistor[29]; (e) Ti3C2Tx MXene as the channel in electron-double layer transistor for synaptic devices[30]; (f) Ti3C2Tx MXene-Si Schottky diode array as image sensor[31]

Fig. 6 Perspective of MXetronics

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