Anisotropic Calculation of Mechanical Property of GaAs Crystal

doi:10.15541/jim20200507

Abstract

Abstract:

Gallium arsenide possesses excellent photoelectric property which have been widely used in electron and semiconductor industries. To promote the cleavage manufacturing technology of gallium arsenide, the anisotropy of mechanical property of gallium arsenide is calculated in this work. The structural parameters, such as angle between the crystal planes, the spacing between planes and density of atoms, were calculated. The change rule of elastic modulus, Poisson’s ratio, shear modulus, hardness and fracture toughness of monocrystalline gallium arsenide on crystal {100} plane with crystal orientation was analyzed by generalized Hooke’s law and indentation tests. The results show that difference of structural parameters between planes is the main reason for the anisotropy of mechanical properties of GaAs. With variation of crystal orientation, the elastic modulus and Poisson’s ratio on the {100} crystal plane appear periodic changes, while shear modulus is identically equal to 59.4 GPa. Anisotropy of GaAs {100} crystal plane hardness changes slightly while fracture toughness changes greatly with a minimum value of 0.304 MPa·m^1/2 in <110> crystal direction which is sensitive to the crack propagation.

Key words: gallium arsenide, mechanical property, anisotropy, indentation test

CLC Number:

O733

DONG Kangjia, JIANG Chen, REN Shaobin, LANG Xiaohu, GAO Rui, YE Hui. Anisotropic Calculation of Mechanical Property of GaAs Crystal[J]. Journal of Inorganic Materials, 2021, 36(6): 645-651.

Figures/Tables 10

Fig. 1 Structure and main crystal plane of GaAs (a) GaAs crystal structure; (b) GaAs (100) plane; (c) GaAs (110) plane; (d) GaAs (111) plane

Fig. 2 Atomic distribution structure of each crystal plane of GaAs (a) GaAs (100) plane; (b) GaAs (110) plane; (c) GaAs (111) plane

Fig. 3 Vector diagram

Table 1 GaAs material parameters[10]

Mechanical parameters of GaAs	S₁₁/ (×10^-12, Pa^-1)	S₁₂/ (×10^-12, Pa^-1)	S₄₄/ (×10^-12, Pa^-1)
Value	11.7	3.7	16.8

Fig. 4 Elastic modulus of gallium arsenide (a) Single lattice elastic modulus of GaAs; (b) Elastic modulus of GaAs (100) plane

Fig. 5 Poisson’s ratio of gallium arsenide (a) Lattice Poisson’s ratio of GaAs; (b) Poisson’s ratio of GaAs (100) plane

Fig. 6 Shear modulus of gallium arsenide (a) Shear modulus of GaAs spatial lattice; (b) Shear modulus of GaAs (100) plane

Fig. 7 Indentation morphologies of gallium arsenide

Fig. 8 Vickers hardness and fracture toughness of gallium arsenide

Table 2 Vickers hardness and fracture toughness[7,8,9,10]

Data source	Hardness/GPa	K_IC/(MPa·m^1/2)	Comments
Chen, et al^[7]	5.27-5.45	0.482-0.579	<110> and <100> crystal direction measured by different loads
Xu, et al^[8]	6-10	-	Measured by different loads
Ponraj, et al^[9]	8.2-10.4	-	Measured by different loads
Hjort, et al^[10]	7	0.44	Average value
This work	5.69-6.21	0.30-0.60	Measured by single loads and different crystal orientations

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