叠层量子点发光二极管的研究进展

doi:10.15541/jim20250397

无机材料学报 ›› 2026, Vol. 41 ›› Issue (8): 1036-1048.DOI: 10.15541/jim20250397

叠层量子点发光二极管的研究进展

钟鸿(), 张宇豪, 单青松(), 胡天鋆, 曾海波()

南京理工大学材料科学与工程学院, 新型显示材料与器件工信部重点实验室, 南京 210094

收稿日期:2025-10-11 修回日期:2025-11-13 出版日期:2026-08-20 网络出版日期:2025-12-11
通讯作者: 单青松, 副研究员. E-mail: shanqingsong@njust.edu.cn;
曾海波, 教授. E-mail: zeng.haibo@njust.edu.cn
作者简介:钟鸿(2001-), 男, 硕士研究生. E-mail: zhonghong@njust.edu.cn
基金资助:
国家重点研发计划(2024YFB3612400);国家重点研发计划(2024YFA1210002);国家自然科学基金(62574111);国家自然科学基金(62204120);国家自然科学基金(52533012);国家自然科学基金(U24A20286);国家自然科学基金(52131304);国家自然科学基金(62261160392);江苏省国际合作项目(BZ2024038);中央高校基本科研业务费专项资金(30925010415)

Research Progress on Tandem Quantum-dot Light-emitting Diodes

ZHONG Hong(), ZHANG Yuhao, SHAN Qingsong(), HU Tianjun, ZENG Haibo()

MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China

Received:2025-10-11 Revised:2025-11-13 Published:2026-08-20 Online:2025-12-11
Contact: SHAN Qingsong, associate professor. E-mail: shanqingsong@njust.edu.cn;
ZENG Haibo, professor. E-mail: zeng.haibo@njust.edu.cn
About author:ZHONG Hong (2001-), male, Master candidate. E-mail: zhonghong@njust.edu.cn
Supported by:
National Key Research and Development Program of China(2024YFB3612400);National Key Research and Development Program of China(2024YFA1210002);National Natural Science Foundation of China(62574111);National Natural Science Foundation of China(62204120);National Natural Science Foundation of China(52533012);National Natural Science Foundation of China(U24A20286);National Natural Science Foundation of China(52131304);National Natural Science Foundation of China(62261160392);International Cooperation Program of Jiangsu Province of China(BZ2024038);Fundamental Research Funds for the Central Universities(30925010415)

摘要/Abstract

摘要：

叠层量子点发光二极管(Tandem Quantum-dot Light-emitting Diode, TQLED)作为量子点发光二极管(Quantum-dot Light-emitting Diode, QLED)技术的重要延伸, 通过引入多发光单元与电荷产生层结构, 实现了外量子效率、亮度及寿命的显著提升, 成为新一代高性能显示器件的研究热点。尽管TQLED的研究已经取得了巨大进展, 其仍面临着电荷注入不平衡、溶液工艺兼容性差、材料环保性及器件长期工作下稳定性不足等问题。本文首先介绍了TQLED的基本结构与工作原理, 对比了其相对于普通单层QLED存在的优势, 并详细介绍了电荷产生层的工作原理及其在多发光单元协同工作中发挥的关键作用。随后, 围绕倒置、正置、多发光材料以及其他创新叠层器件结构, 系统分析了不同材料体系、加工工艺以及结构设计在提升器件性能方面的研究进展, 总结了TQLED在效率、亮度及稳定性等方面实现的突破。最后, 指出了当前TQLED面临的挑战, 并从材料创新、结构优化和工艺革新等方面提出了未来可能的发展路径与研究重点, 特别强调了开发环境友好型量子点材料、创新溶液加工工艺以及构建稳定的界面结构的重要性。本文旨在为TQLED的后续技术开发提供理论指导和技术参考, 推动其从实验室研究向产业化应用加速迈进。

关键词: 叠层, 量子点, 发光二极管, 电荷产生层, 综述

Abstract:

Tandem quantum-dot light-emitting diodes (TQLEDs), as an important extension of quantum-dot light-emitting diodes (QLEDs) technology, have achieved remarkable improvements in external quantum efficiency, brightness, and operational lifetime through the introduction of multiple emission units and charge generation layers. They have thus become a major research focus in the development of next-generation high-performance display devices. However, despite the substantial progress made in TQLED research, it still faces several critical challenges, such as imbalanced charge injection, poor compatibility with solution-processing techniques, insufficient environmental friendliness of materials, and inadequate stability of devices during long-term operation. This paper first introduces the basic structure and working principles of TQLED, compares its advantages over conventional single-layer QLED, and elaborates on the working principle of the charge generation layer as well as its key role in the collaborative operation of multiple emission units. Subsequently, focusing on inverted, conventional, multiple emission material-based, and other innovative tandem device structures, the paper conducts a systematic analysis of the research progress in improving device performance through different material systems, processing technologies, and structural designs. It also summarizes the breakthroughs achieved by TQLED in terms of efficiency, brightness, and stability. Finally, it identifies current challenges in TQLED and proposes potential future development pathways alongside research priorities from perspectives such as material innovation, structural optimization, and process refinement. Special emphasis is placed on the importance of developing environmentally friendly quantum dot materials, innovating solution-processing techniques, and constructing stable interface structures. These analyses aim to provide theoretical guidance and technical references for the subsequent technological development of TQLED, accelerating their transition from laboratory research to industrial application.

Key words: tandem, quantum dot, light-emitting diode, charge generation layer, review

中图分类号:

钟鸿, 张宇豪, 单青松, 胡天鋆, 曾海波. 叠层量子点发光二极管的研究进展[J]. 无机材料学报, 2026, 41(8): 1036-1048.

ZHONG Hong, ZHANG Yuhao, SHAN Qingsong, HU Tianjun, ZENG Haibo. Research Progress on Tandem Quantum-dot Light-emitting Diodes[J]. Journal of Inorganic Materials, 2026, 41(8): 1036-1048.

图/表 8

图1 普通单层QLED与双层TQLED工作原理及参数对比

Fig. 1 Comparison of working principles and parameters between conventional single-layer QLED and two-layer TQLED (a) Single emissive layer device; (b) Tandem device with two emissive layers; (c) Comparison of core parameters between two types of light-emitting devices. HTL: hole transport layer; ETL: electron transport layer

图2 CGL工作原理示意图

Fig. 2 Schematic diagram of CGL working principle

表1 电荷产生层常用材料

Table 1 Common materials for charge generation layer

Processing method	Material	Type
Vacuum deposition	FeCl₃:NPB	P type
	Li:Alq	N type
	HATCN, MoO₃	Electron acceptor
	IZO, Ag, Al	Ultra thin conductive layer
Solution method	PEDOT:PSS	P type
Solution method	ZnO, ZnMgO	N type

图3 倒置叠层器件结构及优化效果[54,58 -59,66,68]

Fig. 3 Structure and optimization effects of inverted tandem devices[54,58 -59,66,68] (a) Schematic diagram of energy level arrangement of inverted TQLED device[58]; (b) Wetting angle change before and after IPA addition[66]; (c) Photoluminescence (PL) decay curves of red quantum dots on different functional layer thin films[68]; (d) Energy level structure and electric field induced charge generation of semiconductor-metal-dielectric material CGL[54]; (e) Charge generation efficiency of CGL with and without microstructure[59]; (f) Electroluminescence photos of green and red tandem anti-counterfeiting devices under 8 V (left) and 13 V (right) driving voltages[59]

图4 正置叠层器件结构及优化效果[43,48,52,72]

Fig. 4 Structure and optimization effects of conventional tandem devices[43,48,52,72] (a) Conventional TQLED energy level structure[48]; (b) PL spectra of green quantum dots covered with ZnMgO/Al/HATCN/MoO3 before and after chlorobenzene rinsing[48]; (c) White TQLED working diagram[52]; (d) Color gamut diagram[72]; (e) Comparison of lifetime between tandem and single-layer devices[43]

图5 多发光材料叠层器件结构及优化效果[57,75 -76]

Fig. 5 Structure and optimization effects of multi luminescent materials tandem devices[57,75 -76] (a) Device structure, (b) electroluminescence (EL) spectra and (c) color gamut of cadmium-based/organic tandem device[57]; (d) Device structure, (e) simulated electric field before and after inserting MoO3 and (f) working lifetime and surface temperature comparison of perovskite/organic tandem device[75]; (g) Tandem device structure with optical microcavity and (h) EL spectra of organic, perovskite, and tandem devices[76]

图6 其他创新叠层器件结构及效果[78,80 -81]

Fig. 6 Structure and optimization effects of other innovative tandem devices[78,80 -81] (a) Device structure and (b) AC signal controlled output color of the AC-driven TQLED[78]; (c) Device structure and (d) full-color pixel working diagram of the light output control device[80]; (e) Flexible TQLED assembly processes and working diagram[81]

表2 近年来TQLED器件结构及性能

Table 2 Structure and performance of TQLED devices in recent years

Color	CGL	Effect	EQE/%	Lifetime/h	Ref.
Red	TCTA/MoO₃/IZO/ZnMgO	1. Energy level matching 2. Potential barrier reduction	49.01	>50000 (T₉₅^*@1000 cd/m²)	[83]
Green	PMA/Al:AlO_x	1. Achieved charge injection balance 2. Suppressed current leakage 3. Prevention of solvent damage to the lower layer	50.3	19000 (T₅₀@100 mA/cm²)	[54]
Blue	PMA/Al:AlO_x		24	-	[54]
White	PEDOT:PSS/ZnO/PEIE	1. Improved charge injection balance 2. Inhibition of quenching	28	-	[68]
Red	ZnMgO/PEDOT:PSS	1. Improved CGL acid resistance 2. Inhibition of quenching	35	12000 (T₅₀@1000 cd/m²)	[43]
Red	ZnMgO/Al/HATCN/MoO₃	-	34.4	-	[84]
Green	ZnMgO/Al/HATCN/MoO₃	1. Reduced solvent damage 2. Implementing a matching energy level arrangement 3. Improved balance of carrier injection	27.6	53808 (T₅₀@100 cd/m²)	[48]
Blue	ZnMgO/Al/HATCN/MoO₃		21.4	107 (T₅₀@100 cd/m²)	[48]
White	ZnO/PMA	1. Reduced solvent damage 2. Improved charge injection and transfer capability 3. High transmittance to reduce parasitic light absorption	27.3	-	[72]
Green	Bphen:Cs₂CO₃/Al/HATCN/ MoO₃/CBP	-	40	42080 (T₅₀@100 cd/m²)	[75]
White	Bphen:Yb/HATCN/TAPC	-	23.9	-	[74]
Red	-	1. Prevention of solvent damage to the lower layer 2. High-efficiency interconnection	60.7	≈30000 (T₉₅@1000 cd/m²)	[85]
Red	ITO	1. Improved balance of carrier injection 2. Optimized optical external coupling	51.2	≈31383 (T₉₅@1000 cd/m²)	[86]
Red	ZnMgO/PMA/AMA	1. Improved balance of carrier injection 2. Improved CGL acid resistance 3. Improved morphology of thin films	-	-	[87]

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叠层量子点发光二极管的研究进展

Research Progress on Tandem Quantum-dot Light-emitting Diodes

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