无机材料学报 ›› 2026, Vol. 41 ›› Issue (6): 764-774.DOI: 10.15541/jim20250381
收稿日期:2025-09-28
修回日期:2025-11-20
出版日期:2026-06-20
网络出版日期:2025-12-11
通讯作者:
万 青, 研究员. E-mail: qing-wan@ylab.ac.cn作者简介:胡钰晴(1995-), 女, 博士. E-mail: yuqing-hu@ylab.ac.cn
基金资助:
HU Yuqing1,2(
), ZHU Yixin1,2, LE Xianhao1, WAN Qing1(
)
Received:2025-09-28
Revised:2025-11-20
Published:2026-06-20
Online:2025-12-11
Contact:
WAN Qing, professor. E-mail: qing-wan@ylab.ac.cnAbout author:HU Yuqing (1995-), female, PhD. E-mail: yuqing-hu@ylab.ac.cn
Supported by:摘要:
钽酸锂(LiTaO3, LT)作为一种重要的多功能铁电材料, 以其优异的热释电系数、稳定的物理化学特性及宽波段光谱响应, 在红外探测器、热成像传感器等领域发挥着关键作用。近年来, 随着微电子机械系统(MEMS)与集成光子学技术的迅速发展, 传感器与探测系统正朝着小型化、集成化与高性能化的方向不断演进。在此背景下, 作为热释电器件核心敏感单元材料, 传统块体晶体逐步转向高质量LT单晶薄膜, 以实现更优的热学管理与电学性能。本文系统综述了LT单晶的关键减薄技术发展脉络, 涵盖从传统的机械研磨减薄、化学机械抛光(CMP), 到新兴的离子切片与智能剥离(Smart-Cut)等先进工艺, 重点分析了各技术路径的原理、可实现的薄膜厚度、晶体质量及其优缺点。在此基础上, 本文进一步探讨了减薄后的LT薄膜在热释电探测器中的应用优势与性能表现。最后, 梳理了当前LT单晶薄膜制备与集成所面临的技术挑战, 并展望了未来技术的发展方向, 旨在为新一代高性能、微型化热释电器件的研发提供参考。
中图分类号:
胡钰晴, 朱一新, 乐先浩, 万青. 钽酸锂晶圆减薄技术及其热释电红外探测器应用进展[J]. 无机材料学报, 2026, 41(6): 764-774.
HU Yuqing, ZHU Yixin, LE Xianhao, WAN Qing. Lithium Tantalate Wafer: Advances in Thinning Technology and Application in Pyroelectric Infrared Detectors[J]. Journal of Inorganic Materials, 2026, 41(6): 764-774.
| Type | Material | p/(µC·m-2·K-1) | Tc/℃ | Fv/(m2·C-1) |
|---|---|---|---|---|
| Single crystal | LiTaO3 | 230 | 630 | 0.170 |
| LiNbO3 | 83 | 1210 | 0.103 | |
| Triglycine sulfate (TGS) | 550 | 50 | 0.43 | |
| Deuterated triglycine sulfate (DTGS) | 264 | 61 | 0.48 | |
| Pb(Zr0.55Ti0.45)O3 | 330 | 340 | 0.02 | |
| 0.41Pb(In1/2Nb1/2)O3-0.17Pb[(Mg1/3Nb2/3)xTi1−x]O3-0.42PbTiO3 (001) | 570 | 253 | 0.05 | |
| Ceramic | 0.75Pb(Mg1/3Nb2/3)O3-0.25PbTiO3 | 746 | 130 | 0.016 |
| BaTiO3 | 200 | 120 | 0.005 | |
| Sr0.5Ba0.5Nb2O6 | 205 | 90 | 0.018 | |
| 0.8(Bi0.5Na0.5)TiO3-0.2BaTiO3 | 242 | 209 | 0.027 |
表1 LiTaO3与常见热释电材料性能对比[1-2,4 -5]
Table 1 Comparison of performance between LiTaO3 and common pyroelectric materials[1-2,4 -5]
| Type | Material | p/(µC·m-2·K-1) | Tc/℃ | Fv/(m2·C-1) |
|---|---|---|---|---|
| Single crystal | LiTaO3 | 230 | 630 | 0.170 |
| LiNbO3 | 83 | 1210 | 0.103 | |
| Triglycine sulfate (TGS) | 550 | 50 | 0.43 | |
| Deuterated triglycine sulfate (DTGS) | 264 | 61 | 0.48 | |
| Pb(Zr0.55Ti0.45)O3 | 330 | 340 | 0.02 | |
| 0.41Pb(In1/2Nb1/2)O3-0.17Pb[(Mg1/3Nb2/3)xTi1−x]O3-0.42PbTiO3 (001) | 570 | 253 | 0.05 | |
| Ceramic | 0.75Pb(Mg1/3Nb2/3)O3-0.25PbTiO3 | 746 | 130 | 0.016 |
| BaTiO3 | 200 | 120 | 0.005 | |
| Sr0.5Ba0.5Nb2O6 | 205 | 90 | 0.018 | |
| 0.8(Bi0.5Na0.5)TiO3-0.2BaTiO3 | 242 | 209 | 0.027 |
| Technology | Process principle | Technical feature | Mainstream wafer size | Achievable thickness |
|---|---|---|---|---|
| Mechanical thinning | Material removal from a bulk substrate via grinding and polishing | Low cost, high efficiency, straightforward process | 4-12 inch | Tens to hundreds of micrometers |
| Smart-Cut | Transfer of a single-crystal layer via steps like ion implantation, bonding, and exfoliation | Enabling ultra-thin single- crystal transfer with low crystal defect density and high quality | 4/6 inch (mature), advancing toward 8 inch | Sub-micrometer to nanometer scale |
表2 机械减薄与智能剥离技术对比[21-23]
Table 2 Comparison between mechanical thinning and Smart-Cut techniques[21-23]
| Technology | Process principle | Technical feature | Mainstream wafer size | Achievable thickness |
|---|---|---|---|---|
| Mechanical thinning | Material removal from a bulk substrate via grinding and polishing | Low cost, high efficiency, straightforward process | 4-12 inch | Tens to hundreds of micrometers |
| Smart-Cut | Transfer of a single-crystal layer via steps like ion implantation, bonding, and exfoliation | Enabling ultra-thin single- crystal transfer with low crystal defect density and high quality | 4/6 inch (mature), advancing toward 8 inch | Sub-micrometer to nanometer scale |
图3 热释电效应的工作机理图[52]
Fig. 3 Working mechanism diagrams of pyroelectric effect[52] (a) Spontaneous polarization of pyroelectric materials induced by internal electric dipoles; (b) Decreased spontaneous polarization with dT/dt>0 which drives the migration of electrons in the external circuit; (c) Internal electric field with dT/dt=0 caused by spontaneous polarization in pyroelectric material and the induced external electric field in two electrodes, reaching equilibrium; (d) dT/dt<0, enhancing the spontaneous polarization and breaking the electrical balance again, and then causing reverse electrons migration
| Thickness/μm | RV/(V·W-1) | D*/(cm·Hz1/2·W-1) | NEP/(W·Hz-1/2) | Operating frequency/Hz | Ref. |
|---|---|---|---|---|---|
| 500 | 1.80×103 | 9.97×106 | 5.02×10-8 | 10 | [ |
| 3.33×102 | 9.92×106 | 5.01×10-8 | 70 | ||
| 75 | 2.2×103 | 2.3×107 | / | 5.3 | [ |
| 1.12×103 | 3.2×107 | / | 26.3 | ||
| 12 | 1.54×104 | 3.8×107 | / | 12.3 | [ |
| 1.02×104 | 8.34×107 | / | 53.8 | ||
| 9 | 8×105 | 2×109 | / | / | [ |
| 0.770 | 2.9×103 | 2.8×107 | / | 10 | [ |
| 6.3×103 | 2.49×108 | / | 200 |
表3 基于不同厚度LiTaO3单晶的探测器性能[15,29,41,58 -59]
Table 3 Performance of detectors based on LiTaO3 single crystals with different thicknesses[15,29,41,58 -59]
| Thickness/μm | RV/(V·W-1) | D*/(cm·Hz1/2·W-1) | NEP/(W·Hz-1/2) | Operating frequency/Hz | Ref. |
|---|---|---|---|---|---|
| 500 | 1.80×103 | 9.97×106 | 5.02×10-8 | 10 | [ |
| 3.33×102 | 9.92×106 | 5.01×10-8 | 70 | ||
| 75 | 2.2×103 | 2.3×107 | / | 5.3 | [ |
| 1.12×103 | 3.2×107 | / | 26.3 | ||
| 12 | 1.54×104 | 3.8×107 | / | 12.3 | [ |
| 1.02×104 | 8.34×107 | / | 53.8 | ||
| 9 | 8×105 | 2×109 | / | / | [ |
| 0.770 | 2.9×103 | 2.8×107 | / | 10 | [ |
| 6.3×103 | 2.49×108 | / | 200 |
图4 不同类型的热释电探测器结构[1]
Fig. 4 Different types of pyroelectric detector structures[1] (a) Schematic diagram of a single-element pyroelectric detector; (b) Image of a pyroelectric detector using a 2mm×2mm LT element; (c) Pyroelectric detector consisting of two compensated active elements and sensitive element; (d) Linear array using LT element and compensation element
图5 基于LT单晶的热释电探测器应用[67-68]
Fig. 5 Application of pyroelectric detector based on LT single crystal[67-68] (a-c) Device basing on LT crystal slice[67]: (a) three dimension device structures, (b) simulation result of the temperature changing, and (c) response voltage and NEP parameters at different chopper frequencies; (d-f) Device basing on LT thin film[67]: (d) three dimension device structures, (e) simulation result of the temperature changing, and (f) response voltage and NEP parameters at different chopper frequencies; (g) Schematic of the experimental setup[68]; (h) Linear response of detector under terahertz high-energy pulses (the empty blue circle and red square represent the test results of standard detector and sensitivity-reduced detector, respectively)[68]
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