A Rectifier Bridge Circuit Based on Metal-semiconductor-metal Fin Tunneling Diode for High-frequency Application

doi:10.15541/jim20250076

Abstract

Abstract: Tunneling diodes hold significant promise for future rectification in the terahertz and visible light spectra thanks to their femtosecond-scale transit-time tunneling capabilities. In this work, we present TiN/ZnO/Pt fin tunneling diodes (FTDs) with tunneling distances of 10 nm and 5 nm that demonstrate remarkable characteristics, including ultrahigh asymmetry (1.6×10⁴ for 10 nm device and 1.6×10³ for 5 nm device), high responsivity (25.3 V^-1 for 10 nm device and 28.3 V^-1 for 5 nm device) at zero bias, surpassing the thermal voltage limit of conventional Schottky diode and low turn-on voltage (V_on) of approximately 100 mV for both devices, making them ideal for power conversion applications. Using technology computer-aided design (TCAD) simulations, the observed asymmetry in electronic transport is attributed to the transition between Fowler-Nordheim tunneling (FNT) and trap-assisted tunneling (TAT) under different biasing conditions, as illustrated by the corresponding energy band profiles. Furthermore, by integrating the FTDs, we design a rectifier bridge circuit that exhibits full-wave rectification behavior, validated through Spice simulations for THz-band operations. This advancement offers a highly efficient solution for THz-band energy conversion and effective detection applications.

Key words: fin tunneling diode, TCAD, rectifier bridge, spice simulations

CLC Number:

TQ174

DENG Hengyang, QIN Cuijie, HAO Shenglan, FENG Guangdi, ZHU Qiuxiang, TIAN Bobo, CHU Junhao, DUAN Chungang. A Rectifier Bridge Circuit Based on Metal-semiconductor-metal Fin Tunneling Diode for High-frequency Application[J]. Journal of Inorganic Materials, DOI: 10.15541/jim20250076.

References

[1] KHAN A A, JAYASWAL G, GAHAFFAR F A, et al. Metal-insulator-metal diodes with sub-nanometre surface roughness for energy-harvesting applications. Microelectron. Eng., 2017, 181: 34.
[2] DRAGOMAN M, ALDRIGO M.Graphene rectenna for efficient energy harvesting at terahertz frequencies.Appl. Phys. Lett., 2016, 109(11): 113105
[3] OLLER D, OSGOOD R, XU J, et al. Optical rectification in a reconfigurable resistive switching filament. Appl. Phys. Lett., 2019, 115(4): 043101.
[4] WEERAKKODY A, BELKADI A, MODDEL G.Nonstoichiometric nanolayered Ni/NiO/Al₂O₃/CrAu metal-insulator-metal infrared rectenna.ACS Appl. Nano Mater., 2021, 4(3): 2470.
[5] BELKADI A, WEERAKKODY A, MODDEL G.Demonstration of resonant tunneling effects in metal-double-insulator-metal (MI(2)M) diodes.Nat. Commun., 2021, 12: 2925.
[6] SHAYGAN M, WANG Z, ELSAYED M S,et al. High performance metal-insulator-graphene diodes for radio frequency power detection application. Nanoscale, 2017, 9(33): 11944.
[7] SANCHEZ A, DAVIS C F, LIU K C,et al. The MOM tunneling diode: Theoretical estimate of its performance at microwave and infrared frequencies. J. Appl. Phys., 1978, 49(10): 5270.
[8] NISHIDA Y, NISHIGAMI N, DIEBOLD S,et al. Terahertz coherent receiver using a single resonant tunnelling diode. Sci. Rep., 2019, 9: 18125.
[9] MITROVIC I Z, ALMALKI S, TEKIN S B,et al. Oxides for rectenna technology. Materials (Basel), 2021, 14(18): 5218.
[10] ALSHEHRI A H, MISTRY K, NGUYEN V H,et al. Quantum-tunneling metal-insulator-metal diodes made by rapid atmospheric pressure chemical vapor deposition. Adv. Funct. Mater., 2018, 29(7): 1805533.
[11] ANDERSON E C, BOUGHER T L, COLA B A.High performance multiwall carbon nanotube-insulator-metal tunnel diode arrays for optical rectification.Adv. Electron. Mater., 2018, 4(3): 1700446.
[12] ALSHEHRI A H, SHAHIN A, MISTRY K,et al. Metal-insulator-insulator-metal diodes with responsivities greater than 30 A·W^-1 based on nitrogen-doped TiO_x and AlO_x insulator layers. Adv. Electron. Mater., 2021, 7(11): 2100467.
[13] ALIMARDANI N, CONLEY J F.Enhancing metal-insulator-insulator-metal tunnel diodesvia defect enhanced direct tunneling. Appl. Phys. Lett., 2014, 105(8): 082902.
[14] SHRIWASTAVA S, TRIPATHI C C.Metal-insulator-metal diodes: a potential high frequency rectifier for rectenna application.J. Electron. Mater., 2019, 48(5): 2635.
[15] ZHANG X, GRAJAL J, VAZQUEZ-ROY J L,et al. Two-dimensional MoS₂-enabled flexible rectenna for Wi-Fi-band wireless energy harvesting. Nature, 2019, 566(7744): 368.
[16] HOLDEN K E K, QI Y, CONLEY J F. Precision defect engineering of metal/insulator/metal diodes using atomic layer deposition to localize Ni impurities in Al₂O₃ tunnel barriers.J. Appl. Phys., 2021, 129(14): 144502.
[17] SINGH A, RATNADURAI R, KUMAR R,et al. Fabrication and current-voltage characteristics of NiO_x/ZnO based MIIM tunnel diode. Appl. Surf. Sci., 2015, 334: 197.
[18] RATNADURAI R, KRISHNAN S, STEFANAKOS E, et al.Nanomanufacturability of Thin Film MIM Diodes. In: AIP Conference Proceedings. vol. 1313: American Institute of Physics; 2010: 403-405.
[19] PERIASAMY P, BERRY J J, DAMERON A A,et al. Fabrication and characterization of MIM diodes based on Nb/Nb₂O₅ via a rapid screening technique. Adv. Mater., 2011, 23(27): 3080.
[20] PERIASAMY P, GUTHREY H L, ABDULAGATOV A I,et al. Metal-insulator-metal diodes: role of the insulator layer on the rectification performance. Adv. Mater., 2013, 25(9): 1301.
[21] MISTRY K, YAVUZ M, MUSSELMAN K P.Simulated electron affinity tuning in metal-insulator-metal (MIM) diodes.J. Appl. Phys., 2017, 121(18): 184504.
[22] OZYIGIT D, ULLAH F, GULSARAN A,et al. Manufacturing of quantum-tunneling MIM nanodiodes via rapid atmospheric CVD in terahertz band. Sci. Rep., 2023, 13: 20733.
[23] WARD D R, HUSER F, PAULY F,et al. Optical rectification and field enhancement in a plasmonic nanogap. Nat. Nanotechnol., 2010, 5(10): 732.
[24] LIU Z, ABE S, SHIMIZU M,et al. Enhanced current density and asymmetry of metal-insulator-metal diodes based on self-assembly of Pt nanoparticles. Appl. Phys. Lett., 2023, 122(9): 093502
[25] HERNER S B, WEERAKKODY A D, BELKADI A,et al. High performance MIIM diode based on cobalt oxide/titanium oxide. Appl. Phys. Lett., 2017, 110(22): 223901.
[26] MITROVIC I Z, WEERAKKODY A D, SEDGHI N,et al. Controlled modification of resonant tunneling in metal-insulator-insulator-metal structures. Appl. Phys. Lett., 2018, 112(1): 012902.
[27] ALSHEHRI A H, ASGARIMOGHADDAM H, DELUMEAU L V,et al. Combinatorial optimization of metal-insulator-insulator-metal (MIIM) diodes with thickness-gradient films via spatial atomic layer deposition. Adv. Electron. Mater., 2024, 10(11): 2400093.
[28] FENG G, ZHU Q, LIU X,et al. A ferroelectric fin diode for robust non-volatile memory. Nat. Commun., 2024, 15: 513.
[29] LIU X, FENG G, FENG X, et al. Ultrahigh rectification ratio in an asymmetric metal/semiconductor/metal nanoscale tunneling junction: implications for high-frequency rectifiers. ACS Appl. Nano Mater., 2023, 6(4): 2491.
[30] LIU H, ZHANG L, LEBEGUE S,et al. Morphology-electronic effects in ultra-model nanocatalysts under the CO oxidation reaction: the case of ZnO ultrathin films grown on Pt(111). Nanoscale, 2024, 16(43): 20216.
[31] CHEN T, YU K, HU H,et al. Engineering electron transport layer with ionic liquid for high-performance quantum dot light-emitting diodes. ACS Appl. Nano Mater., 2025, 8(9): 4573.
[32] SHINDE P, HASE Y, DOIPHODE V,et al. Morphology-dependent ZnO/MoS₂ heterostructures for enhanced photoelectrochemical water splitting. ACS Appl. Energy Mater., 2025, 8(2): 935.
[33] ALIMARDANI N, KING S W, FRENCH B L, et al. Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes. J. Appl. Phys., 2014, 116(2): 024508.
[34] CONG X, ZHENG Y, HUANG F,et al. Efficiently band-tailored type-III van der Waals heterostructure for tunnel diodes and optoelectronic devices. Nano Research, 2022, 15(9): 8442.
[35] LEE G-H, YU Y-J, LEE C,et al. Electron tunneling through atomically flat and ultrathin hexagonal boron nitride. Appl. Phys. Lett., 2011, 99(24): 243114
[36] MA Q, ANDERSEN T I, NAIR N L,et al. Tuning ultrafast electron thermalization pathways in a van der Waals heterostructure. Nat. Phys., 2016, 12(5): 455.
[37] VU Q A, LEE J H, NGUYEN V L, et al. Tuning carrier tunneling in van der waals heterostructures for ultrahigh detectivity. Nano Lett., 2017, 17(1): 453.
[38] TEKIN S B, ALMALKI S, FINCH H,et al. Electron affinity of metal oxide thin films of TiO₂, ZnO, and NiO and their applicability in 28.3 THz rectenna devices. J. Appl. Phys., 2023, 134(8): 084503.
[39] FOWLER R H, NORDHEIM L.Electron emission in intense electric fields.Proc. Roy. Soc. A, 1928, 119(791): 173.
[40] YU S, GUAN X, WONG H S P. Conduction mechanism of TiN/HfOx/Pt resistive switching memory: a trap-assisted-tunneling model.Appl. Phys. Lett., 2011, 99(6): 063507
[41] CHANG W J, HOUNG M P, WANG Y H.Electrical properties and modeling of ultrathin impurity-doped silicon dioxides.J. Appl. Phys., 2001, 90(10): 5171.
[42] TSIARAPAS C, GIRGINOUDI D, DIMITRIADIS E I,et al. Investigation on deep level defects in polycrystalline ZnO thin films. J. Vac. Sci. Tech. B, 2017, 35(3): 031203.