Research on the Growth Defects of KTiOAsO4 Crystal

Journal of Inorganic Materials

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Research on the Growth Defects of KTiOAsO₄ Crystal

MOU Qi-Shan¹; LIU Xi-Ling¹; MA Chang-Qin²; WANG Xu-Ning²; LU Qing-Ming ²

1.Department of Math and Physics; Shandong Institute of Education; 250013; National Crystal Materials Laboratory; Shandong Universityl Jinan 250100; China;2. Institute of Chemistry; Shandong University, Jinan 250100, China

Received:1999-08-23 Revised:1999-09-13 Published:2000-08-20 Online:2000-08-20

Abstract

Abstract: It is significant to research the growth defects of KTiOAsO₄ crystal in order to improve its physical properties and applications. The growth defects of KTA were studied by the methods of optical micrography and synchrotron radiation topography. The result indicates that two kinds of etchant produce a marked effect to show the defects of KTA crystal, and the main defects in KTA crystal are ferroelectric domain, growth striation, sector boundary, dislocation and inclusion. The forming cause of the defects was also discussed.

Key words: KTiOAsO₄ crystal, synchrotron radiation topography, defect, ferroelectric domain

CLC Number:

O782

MOU Qi-Shan,LIU Xi-Ling,MA Chang-Qin,WANG Xu-Ning,LU Qing-Ming. Research on the Growth Defects of KTiOAsO₄ Crystal[J]. Journal of Inorganic Materials.

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Research on the Growth Defects of KTiOAsO₄ Crystal

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