Journal of Inorganic Materials ›› 2026, Vol. 41 ›› Issue (5): 673-680.DOI: 10.15541/jim20250442

• RESEARCH LETTER • Previous Articles    

Anomalous Fluorescence Thermal Quenching in a Red-emitting RbZnF3:Eu3+ Phosphor under Violet Excitation

DONG Langping1(), LI Shixuan1, YANG Shaoxing1, HOU Jingshan1, LIN Yandan4, ZHOU Pengcheng5, SUN Xuejiao3, SUN Yiyang3(), CHEN Daqin2, FANG Yongzheng1()   

  1. 1 Faculty of Materials Technology, Shanghai Institute of Technology, Shanghai 201418, China
    2 College of Physics and Energy, Fujian Normal University, Fuzhou 350117, China
    3 State Key Laboratory of High Performance Ceramics, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201899, China
    4 College of Intelligent Robotics and Advanced Manufacturing, Fudan University, Shanghai 200438, China
    5 Shanghai Aviation Electric Co., Ltd., Shanghai 201101, China
  • Received:2025-11-01 Revised:2025-12-06 Published:2025-12-19 Online:2025-12-19
  • Contact: SUN Yiyang, professor. E-mail: yysun@mail.sic.ac.cn;
    FANG Yongzheng, professor. E-mail: fyz1003@sina.com
  • About author:DONG Langping (1993-), female, associate professor. E-mail: lpdong@sit.edu.cn
  • Supported by:
    National Key Research and Development Program of China(2021YFB3500501);National Key Research and Development Program of China(2021YFB3500502);National Key Research and Development Program of China(2021YFB3500503);National Key Research and Development Program of China(2021YFB3500500);National Natural Science Foundation of China (NSFC)(52302188);Shanghai Sailing Program(23YF1446100);Shanghai Rising-Star Program(21QC1401100);Talent Introduction Program of Shanghai Institute of Technology(YJ2022-1)

Abstract:

Thermal quenching is a key challenge in the application of fluorescent materials in solid state lighting devices. Herein, we report a perovskite phosphor RbZnF3:Eu3+ exhibiting anti-thermal quenching behavior. Under violet excitation, this phosphor yields bright red emission. As the temperature rises, the luminescence intensity first increases up to 175 ℃ (i.e., anti-thermal quenching) and then decreases. When the temperature is above 200 ℃, the luminescence intensity falls below the value at room temperature. Comprehensive characterizations demonstrate that the observed anti-thermal quenching behavior is mainly due to the existence of defect levels. First-principles calculations show that Rb vacancy and F vacancy could be responsible for the observed defect levels. Finally, this study has fabricated a white light-emitting diode (LED) using the RbZnF3:Eu3+ phosphor which verifies its potential application.

Key words: phosphor, thermal quenching, perovskite, light-emitting diode, defect engineering

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