Abstract: The effects of deposition temperature and system pressure on the morphology of deposited silicon carbide (SiC) were studied with CH_3SiCl_3 as source materials,
hydrogen as carry gas and argon as dilute gas. All sorts of morphologies were accounted by using the principle of the nuclei-growth of crystals and the theory
of thermodynamics of SiC deposition. The results show that reducing system pressure and increasing deposition temperature are propitious to decrease the maximum energy
for forming SiC nucleus in vapor, and promote forming nucleus. The change of the morphology of SiC deposition can be determined by the change of deposition thermodynamics
of SiC with deposition conditions.

Key words: silicon carbide, morphology, deposition thermodynamics, deposition condition