Preparation and Performance Optimization of Boron-Gallium Co-doped Zinc Oxide Transparent Electrodes

doi:10.15541/jim20250273

Abstract

Abstract: Silicon carbide (SiC) photoconductive semiconductor switches (PCSS) are optoelectronic devices that utilize ultrafast pulsed lasers to modulate semiconductor resistivity for switching operations, demonstrating broad application prospects in pulsed power systems, Dielectric Wall Accelerator and ultrafast electronics. Transparent conductive oxide films exhibit significant potential for optoelectronic transparent electrodes due to their excellent optical transparency and electrical conductivity. In this study, boron-gallium co-doped zinc oxide (BGZO) thin films were prepared by magnetron sputtering, and the effects of annealing temperature (300-600 ℃) on their structural and electrical properties were systematically investigated. XRD and Hall effect measurements revealed that films annealed at 400 ℃ exhibited optimal crystallinity and electrical performance, achieving a visible-light transmittance of 93% and a resistivity as low as 2.78 × 10⁻² Ω·cm. As a practical demonstration, the optimized BGZO films were integrated as transparent electrodes into SiC PCSS devices. Comparative experiments showed that under 532 nm, 170 mJ pulsed laser excitation, the BGZO-based devices exhibited more stable operation than conventional Ni-based electrodes, with reduced filamentary current damage at the SiC-electrode interface and improved electric field uniformity at the electrode edges. This study provides an optimized fabrication strategy for high-performance transparent conductive films and confirms their advantages in photoconductive switch applications.

Key words: boron-gallium co-doped zinc oxide, transparent electrodes, silicon carbide, photoconductive switch

CLC Number:

TQ174

JIANG Shengnan, ZHENG Zhong, HE Weiyi, LIU Tao, PAN Xiuhong, CHEN Kun, GUO Hui, GAO Pan, LIU Chunjun, LIU Xuechao. Preparation and Performance Optimization of Boron-Gallium Co-doped Zinc Oxide Transparent Electrodes[J]. Journal of Inorganic Materials, DOI: 10.15541/jim20250273.

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