Journal of Inorganic Materials ›› 2025, Vol. 40 ›› Issue (10): 1119-1128.DOI: 10.15541/jim20240538
• RESEARCH ARTICLE • Previous Articles Next Articles
CAO Luhan1,2(
), MENG Jia1(
), XUE Yudong3,4, SHENG Xiaochen1, CUI Yuanyuan5, LE Jun1, SONG Lixin1,2(
)
Received:2024-12-26
Revised:2025-03-15
Published:2025-10-20
Online:2025-04-02
Contact:
MENG Jia, professor. E-mail: jiameng@mail.sic.ac.cn;About author:CAO Luhan (2000-), female, Master candidate. E-mail: caoluhan22@mails.ucas.ac.cn
CLC Number:
CAO Luhan, MENG Jia, XUE Yudong, SHENG Xiaochen, CUI Yuanyuan, LE Jun, SONG Lixin. Effect of SiC Transition Layer on Bonding Properties of MoSi2-SABB Coating on SiC/SiC Ceramic Matrix Composites[J]. Journal of Inorganic Materials, 2025, 40(10): 1119-1128.
| Sample | Temperature, T/℃ | Density, ρ/(kg·m−3) | Elastic modulus/GPa | Poisson’s ratio | Thermal expansion coefficient, α/ (×10−6, K-1) | Thermal conductivity/ (W·m-1·K-1) | Specific heat capacity/ (J·kg-1·K-1) |
|---|---|---|---|---|---|---|---|
| MoSi2-SABB coating | 25 | 2192 | 33.370 | 0.208 | 3.30 | 1.130 | 716 |
| 100 | - | 33.805 | 0.208 | 3.30 | 1.206 | 789 | |
| 200 | - | 34.125 | 0.208 | 3.51 | 1.277 | 883 | |
| 300 | - | 34.499 | 0.208 | 3.66 | 1.368 | 975 | |
| 400 | - | 34.824 | 0.208 | 3.70 | 1.475 | 1068 | |
| 500 | - | 34.861 | 0.208 | 3.64 | 1.702 | 1159 | |
| 600 | - | 35.246 | 0.208 | 3.59 | 1.849 | 1252 | |
| CMCs | 25 | 2600 | 150 | 0.130 | 2.929 | 4.83 | 759 |
| 200 | - | 150 | 0.130 | 4.128 | / | 706 | |
| 400 | - | 150 | 0.130 | 3.880 | / | 299 | |
| 600 | - | 150 | 0.130 | 3.831 | / | 410 | |
| 800 | - | 150 | 0.130 | 4.124 | 4.68 | 805 | |
| 1000 | - | 150 | 0.130 | 4.157 | 4.57 | 963 | |
| SiC layer[ | 3200 | 340 | 0.142 | 4.0 | 39 | 700 |
Table 1 Thermophysical properties of the relevant materials
| Sample | Temperature, T/℃ | Density, ρ/(kg·m−3) | Elastic modulus/GPa | Poisson’s ratio | Thermal expansion coefficient, α/ (×10−6, K-1) | Thermal conductivity/ (W·m-1·K-1) | Specific heat capacity/ (J·kg-1·K-1) |
|---|---|---|---|---|---|---|---|
| MoSi2-SABB coating | 25 | 2192 | 33.370 | 0.208 | 3.30 | 1.130 | 716 |
| 100 | - | 33.805 | 0.208 | 3.30 | 1.206 | 789 | |
| 200 | - | 34.125 | 0.208 | 3.51 | 1.277 | 883 | |
| 300 | - | 34.499 | 0.208 | 3.66 | 1.368 | 975 | |
| 400 | - | 34.824 | 0.208 | 3.70 | 1.475 | 1068 | |
| 500 | - | 34.861 | 0.208 | 3.64 | 1.702 | 1159 | |
| 600 | - | 35.246 | 0.208 | 3.59 | 1.849 | 1252 | |
| CMCs | 25 | 2600 | 150 | 0.130 | 2.929 | 4.83 | 759 |
| 200 | - | 150 | 0.130 | 4.128 | / | 706 | |
| 400 | - | 150 | 0.130 | 3.880 | / | 299 | |
| 600 | - | 150 | 0.130 | 3.831 | / | 410 | |
| 800 | - | 150 | 0.130 | 4.124 | 4.68 | 805 | |
| 1000 | - | 150 | 0.130 | 4.157 | 4.57 | 963 | |
| SiC layer[ | 3200 | 340 | 0.142 | 4.0 | 39 | 700 |
Fig. 2 Surface morphologies and structures of CMCs substrates before and after preparation of the SiC transition layer, along with morphology of the MoSi2-SABB coating prepared on its surface (a-d) SEM images of (a) CMCs, (b) CMCs/MoSi2-SABB coating, (c) CMCs/SiC, and (d) CMCs/SiC/MoSi2-SABB coating; (e) Surface profile curves of CMCs and CMCs/SiC; (f) Surface 3D profile curves of CMCs/SiC
Fig. 3 Curves of temperature and residual stress at peaks and valleys of MoSi2-SABB coating interfaces in CMCs/MoSi2- SABB and CMCs/SiC/MoSi2-SABB models (a) Radial stress; (b) Axial stress
Fig. 4 Radial stress (a, b) and axial stress (c, d) of coating interface of CMCs/MoSi2-SABB (a, c) and CMCs/SiC/MoSi2-SABB (b, d) S11: radial stress; S22: axial stress. Colorful figures are available on website
Fig. 6 Macroscopic morphologies of MoSi2-SABB coatings on the surface of three SiC transition layers prepared by different CVD processes (a) 1# sample; (b) 2# sample; (c) 3# sample
| Wsep/(J·m-2) | 6H-SiC/ MoSi2 | 6H-SiC/ SiO2 | 3C-SiC/ MoSi2 | 3C-SiC/ SiO2 |
|---|---|---|---|---|
| Si termination | 3.64 | 6.67 | 2.91 | 4.79 |
| C termination | 4.80 | 1.60 | 7.41 | 0.49 |
Table 2 Adhesion strength of 6H-SiC, 3C-SiC and MoSi2, SiO2 interfaces
| Wsep/(J·m-2) | 6H-SiC/ MoSi2 | 6H-SiC/ SiO2 | 3C-SiC/ MoSi2 | 3C-SiC/ SiO2 |
|---|---|---|---|---|
| Si termination | 3.64 | 6.67 | 2.91 | 4.79 |
| C termination | 4.80 | 1.60 | 7.41 | 0.49 |
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