Journal of Inorganic Materials

   

Spectroscopic Analysis of Ho:BaF₂ Crystals in the NIR to MIR Spectral Region

QIAN Xinyu1, WANG Wudi1, GUO Junyao1, REN Yongchun1, DONG Jianshu1, WANG Qingguo1, TANG Huili1, ZHANG Chenbo1, XU Xiaodong2, DONG Yongjun3, HUA Wei4, XU Jun1   

  1. 1. Institute for Advanced Study, School of Physical Science and Engineering, Key Laboratory of Advanced Micro-Structured Materials, Tongji University, Shanghai 200092, China;
    2. School of Physics and Electronic Engineering, Jiangsu Provincial Key Laboratory of Advanced Laser Materials and Devices, Jiangsu Normal University, Xuzhou 221116, China;
    3. Shanghai Xinfeirui Technology Co., Ltd., Shanghai 300444, China;
    4. Ningbo Leijing Technology Co., Ltd., Ningbo 315500, China
  • Received:2025-09-02 Revised:2025-10-08
  • About author:QIAN Xinyu (1998-), male, PhD candidate. E-mail: 894742295@qq.com
  • Supported by:
    National Key R&D Program of China (2022YFB3605701, 2023YFB3507401); National Natural Science Foundation of China (62275198, 52032009)

Abstract: Infrared lasers in the 1-3 μm region are increasingly important for applications in medical treatment, atmospheric monitoring, and high-power laser systems. Holmium ions (Ho³⁺) are particularly attractive because of their multiple emission channels covering near to mid infrared ranges. This work aims to systematically evaluate the structural and spectroscopic properties of Ho:BaF₂ crystals and determine the optimal doping concentrations for efficient multi-band laser operation. High-quality Ho:BaF₂ single crystals with concentrations of 0.5%-3.0% (in atomic) were grown using the temperature gradient technique (TGT). Structural characterization was performed by XRD and ICP-AES, while spectroscopic properties were analyzed via absorption, fluorescence, and lifetime measurements. Judd-Ofelt analysis was further applied to calculate radiative parameters. All samples exhibited pure cubic fluorite structures, with doping segregation ratios close to unity and uniform Ho³⁺ distribution. Spectroscopic evaluation revealed optimal doping concentrations of 2.0% (in atomic) for ~1.2 μm (⁵I₆→⁵I₈, Q=24.29×10⁻²¹ cm²·ms) and ~2.05 μm (⁵I₇→⁵I₈, Q=67.53×10⁻²¹ cm²·ms), and 1.0% (in atomic) for ~2.85 μm (⁵I₆→⁵I₇, Q=44.52×10⁻²¹ cm²·ms). The BaF₂ host, with its low phonon energy (~346 cm⁻¹) and anti-clustering characteristics, enabled enhanced emission performance, including a maximum emission cross-section of 3.81×10⁻²¹ cm² at ~2.05 μm. These results outperform traditional hosts such as YAG and CaF₂. Compared to oxide hosts, BaF₂ offers superior lifetime, reduced non-radiative losses, and greater resistance to concentration quenching. The findings indicate that Ho:BaF₂ supports higher effective doping levels, making it particularly promising for high-power and ultrafast laser applications. Ho:BaF₂ crystals demonstrate excellent potential as efficient, multi-wavelength infrared laser gain media.

Key words: BaF2 crystals, holmium doping, mid-infrared lasers, spectroscopic characteristics

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