Journal of Inorganic Materials

• Research Paper • Previous Articles     Next Articles

Physical Properties, Bulk Growth, and Applications of SiC Single Crystal

WANG Shi-Zhong, XU Liang-Ying, SHU Bi-Yun, XIAO Bing, ZHUANG Ji-Yong, SHI Er-We   

  1. Shanghai Institute of Ceramics; Chinese Academy of Sciences Shanghai 200050 China
  • Received:1998-09-03 Revised:1998-09-15 Published:1999-08-20 Online:1999-08-20

Abstract: This article reviewed on the physical properties, the crystal structure, the growth methods, and the applications of the SiC single crystal The preparation of the SiC single crystal by sublimation method was introduced in detail The defects of SiC single crystal caused in the PVT process were discussed

Key words: silicon carbide, crystal, growth, physical property, semiconductor device

CLC Number: