0.9BaTiO3-0.1Bi(Mg1/2Ti1/2)O3 Ferroelectric Thin Films: Preparation and Energy Storage

doi:10.15541/jim20230488

Abstract

Abstract:

Dielectric thin film, one of the materials of which storage energy in the form of electrostatic field via dielectric polarization, can be widely used in electric equipment, due to their high power density and high charge/ discharge efficiency. Currently, the dielectric energy storage films perform lower energy density and weak temperature stability. In this work, 0.9BaTiO₃-0.1Bi(Mg_1/2Ti_1/2) O₃(0.9BT-0.1BMT) ferroelectric thin films were prepared via a Sol-Gel method on Pt/Ti/SiO₂/Si substrates and annealed in the range of 700-900 ℃ to realize high energy storage density and wide-temperature stability by introducing BMT. The effect of annealing temperature on phase composition and microstructure was investigated. The results show that denseness of thin films reduce obviously when the annealing temperature is over 750 ℃ and their grain size increases gradually with the increase of treatment temperature. Additionally, the thin films annealed at 750 ℃ display optimized comprehensive feature: room-temperature dielectric constant of ~399, loss tangent of ~5.79% at 1 kHz, and ∆C/C_{25 ℃} ratio only within ±13.9%. Meanwhile, relaxor value, γ≈1.96 calculated according to Currie-Weiss law consolidates that the thin films possess obvious relaxor characteristics. Results of energy storage shows that the max value of W_recis ~ 51.9 J/cm³, and the τ_0.9 is below 15 μs at pulse charge measure. Moreover, results of temperature stability measurement show W_rec>20 J/cm³, η>65% (1600 kV/cm) and τ_0.9<7.2 μs from room temperature to 200 ℃, demonstrating that the film still exists high and stable energy storage under high temperature. Therefore, the ferroelectric thin film 0.9BT-0.1BMT prepared in this work has a promising applications in energy storage under high temperature environment.

Key words: BaTiO₃, ferroelectric thin film, annealing temperature, energy storage, wide-temperature stability, relaxor ferroelectric

CLC Number:

TQ174

LIU Song, ZHANG Faqiang, LUO Jin, LIU Zhifu. 0.9BaTiO₃-0.1Bi(Mg_1/2Ti_1/2)O₃ Ferroelectric Thin Films: Preparation and Energy Storage[J]. Journal of Inorganic Materials, 2024, 39(3): 291-298.

Figures/Tables 7

Fig. 1 XRD patterns of 0.9BT-0.1BMT thin films annealed at different temperatures

Fig. 2 SEM images of thin films annealed at different temperatures (a) 700 ℃; (b) 750 ℃; (c) 800 ℃; (d) 850 ℃; (e) 900 ℃; (f) Cross-section structure of thin films annealed at 750 ℃

Fig. 3 Dielectric properties of 0.9BT-0.1BMT thin films annealed at 750 ℃ and tested at different frequencies (a-c) Temperature-dependent (a) dielectric constant, (b) loss tangent and (c) capacitance of 0.9BT-0.1BMT thin films annealed at 750 ℃; (d) Function of ln(1/εr−1/εm) versus ln(T−Tm) measured under 1 kHz with symbols standing for experiment data and solid line indicating fitting to the modified Curie-Weiss law

Fig. 4 Electrical performance of 0.9BT-0.1BMT thin films tested at room temperature (a) P-E loops; (b) Pmax and Pr measured at different electric fields; (c) Wrec and η measured at different electric fields; (d) Leakage current of thin films at 400 kV/cm

Fig. 5 Property comparison for materials prepared in this work with other materials (a) Energy storage performance [26⇓⇓⇓⇓⇓⇓-33]; (b) Meet ∆C/C25℃≤±15% temperature range[10-11,26]

Fig. 6 Effects of (a-c) frequency, (d-f) temperature and (g-i) switching cycles on P-E loops, Pmax, Pr, and energy storage performance of 0.9BT-0.1BMT thin films

Fig. 7 Discharge characteristics of 0.9BT-0.1BMT film capacitors (a) Curves of overdamped discharge current; (b) Time dependence of Wdis at various electric fields; (c) Values of Wdis and τ0.9 at different electric fields; (d) Overdamped discharge current curves at 1388 kV/cm with different temperatures; (e) Time dependence of Wdis at different temperatures; (f) Values of Wdis and τ0.9 at different temperatures; Colorful figures are available on website

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0.9BaTiO₃-0.1Bi(Mg_1/2Ti_1/2)O₃ Ferroelectric Thin Films: Preparation and Energy Storage

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