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无机材料学报

无机材料学报

• 研究论文 • 上一篇    下一篇

溶胶-凝胶法制备SiO2-TiO2复合薄膜的抗刻蚀能力研究

翟继卫a; 张良莹ab; 姚熹ab   

  1. a同济大学功能材料研究所; 上海 200092; b西安交通大学电子材料研究所, 西安 710049
  • 收稿日期:1998-03-02 修回日期:1998-03-26 出版日期:1999-02-20 网络出版日期:1999-02-20

The Etched Capacity for Sol-Gel Derived Silica-Titania Composited Films

ZHAI Ji-Weia; ZHANG Liang-Yingab; YAO Xiab   

  1. aFunctional materials Research laboratory Tongji University Shanghai 200092 China; bElectronic materials research laboratory Xi an jiaotong university Xi an 710049 China
  • Received:1998-03-02 Revised:1998-03-26 Published:1999-02-20 Online:1999-02-20

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摘要： 采用Sol－Gel工艺制备SiO2－TiO2复合薄膜，研究在不同温度下薄膜对HF缓冲溶液的刻蚀能力．薄膜经800℃热处理的刻蚀速率是200℃热处理的1／1000倍，利用这种差异，在薄膜上用激光进行致密化处理，从而形成所需的图形．由XRD和FT－IR光谱分析对造成这种刻蚀能力差异的原因进行了解释、讨论．显微Raman光谱揭示出薄膜经激光处理后，其致密化区域具有不同的晶化特征．说明激光光束的能量分布对其扫描区域的析晶分布有一定的对应关系．

关键词: 薄膜, 结构, 激光写入, 化学腐蚀, 微区Raman光谱

Abstract: Titania-silica thin films were prepared by a Sol-gel method. The etched ability of the thin films in dilute HF solution was studied. The
film heat-treated at 800℃, reduced etch rate by a factor of almost 1000 compared with that of the film heat-treated at 200℃.
The large difference between the etch rates of densified and undensified films can be used to produce channel waveguide structures by laser scanning on the films. The difference
of the etch rates can be explained by XRD and FT-IR spectrum, and micro Raman spectrum reveals that the crystallization in the region of
laser scanning has a normal distribution.

Key words: film, structure, laser scanning, chemical etch, micro Raman spectrum

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