工作气压对AlScN薄膜结构和电学性能的影响

doi:10.15541/jim20250344

无机材料学报 ›› 2026, Vol. 41 ›› Issue (4): 486-492.DOI: 10.15541/jim20250344 CSTR: 32189.14.10.15541/jim20250344

工作气压对AlScN薄膜结构和电学性能的影响

隋金洋¹(), 周大雨¹(), 赵文瑾¹, 童祎², 王新朋²

¹ 大连理工大学材料科学与工程学院, 大连 116024
² 苏州实验室, 苏州 215123

收稿日期:2025-08-22 修回日期:2025-10-04 出版日期:2026-04-20 网络出版日期:2025-10-31
通讯作者: 周大雨, 教授. E-mail: zhoudayu@dlut.edu.cn
作者简介:隋金洋(1998-), 女, 博士研究生. E-mail: 2020sjy@mail.dlut.edu.cn
基金资助:
国家自然科学基金(52472120);中央高校基本科研业务费资助项目(DUT24LAB117);苏州实验室科研项目(SK-1202-2024-012)

Effects of Working Pressure on the Structure and Electrical Properties of AlScN Thin Films

SUI Jinyang¹(), ZHOU Dayu¹(), ZHAO Wenjin¹, TONG Yi², WANG Xinpeng²

¹ School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024, China
² Suzhou Laboratory, Suzhou 215123, China

Received:2025-08-22 Revised:2025-10-04 Published:2026-04-20 Online:2025-10-31
Contact: ZHOU Dayu, professor. E-mail: zhoudayu@dlut.edu.cn
About author:SUI Jinyang (1998-), female, PhD candidate. E-mail: 2020sjy@mail.dlut.edu.cn
Supported by:
National Natural Science Foundation of China(52472120);Fundamental Research Funds for the Central Universities of China(DUT24LAB117);Suzhou Laboratory Project(SK-1202-2024-012)

摘要/Abstract

摘要：

自2019年Al_1-_xSc_xN薄膜的铁电性能被实验报道以来, 纤锌矿结构铁电材料在全球范围内受到广泛关注。然而, 其铁电性能对制备工艺的强烈依赖性仍然是一个重大挑战, 限制了其在实际器件应用中的集成。本研究旨在系统探究溅射工作气压对Al_1-_xSc_xN薄膜微观结构及相应铁电特性的影响。核心目标在于确定优异铁电性能的最佳工作气压窗口, 并揭示其背后结构与性能的关联机制。本研究在纯氮气气氛下, 采用反应磁控溅射技术在硅衬底上制备Al_0.71Sc_0.29N薄膜, 工作气压范围为0.27~1.33 Pa。通过X射线衍射、扫描电子显微镜和铁电测试仪等表征手段, 系统分析了薄膜的晶体结构、表面形貌与铁电性能之间的关联机制。结果表明, 工作气压显著影响Al_0.71Sc_0.29N薄膜的结晶质量, 在0.52 Pa条件下制备的薄膜具有最佳结晶质量和最优铁电性能。随着工作气压增加, 薄膜表面开始出现棱锥状结构并逐渐增多, 静态漏电流逐渐减小。本研究证实工作气压是调控Al_1-_xSc_xN薄膜结构与铁电性能的决定性因素之一。工作气压诱导的薄膜形貌变化及漏电流抑制, 为设计高性能纤锌矿铁电器件提供了重要参考。

关键词: AlScN薄膜, 工作气压, 微观结构, 铁电性能

Abstract:

Since ferroelectric properties of Al_1-_xSc_xN thin films were experimentally confirmed in 2019, wurtzite-structured ferroelectric materials have received worldwide attention. However, the strong dependence of their ferroelectric performance on deposition parameters still remains a significant challenge, limiting their reliable integration into practical device applications. This study aims to systematically investigate the influence of sputtering working pressure on microstructural evolution and resultant ferroelectric properties of Al_1-_xSc_xN thin films. The primary goal is to identify the optimal pressure window that yields superior ferroelectric performance and to understand the underlying structure-property relationships. Al_0.71Sc_0.29N thin films were deposited on silicon substrates using reactive magnetron sputtering in a pure nitrogen atmosphere, and experienced the working pressure varied from 0.27 Pa to 1.33 Pa. The correlation between crystal structure, surface morphology, and ferroelectric properties of the thin film was analyzed. The results showed that the working pressure significantly affected crystallization quality of Al_0.71Sc_0.29N thin films, among which prepared under 0.52 Pa had the best crystallization quality and excellent ferroelectric properties. As the working pressure increased, the pyramid-like structures began to appear on surface of the film and gradually increased, while the static leakage current also gradually decreased. This work conclusively demonstrates that sputtering working pressure is one of the decisive factors in tuning microstructure and ferroelectricity of Al_1-_xSc_xN films. The correlation between working pressure-induced morphological changes and leakage current suppression offers valuable insights for engineering high-performance wurtzite ferroelectric devices.

Key words: AlScN film, working pressure, micro structure, ferroelectric property

中图分类号:

TQ174

隋金洋, 周大雨, 赵文瑾, 童祎, 王新朋. 工作气压对AlScN薄膜结构和电学性能的影响[J]. 无机材料学报, 2026, 41(4): 486-492.

SUI Jinyang, ZHOU Dayu, ZHAO Wenjin, TONG Yi, WANG Xinpeng. Effects of Working Pressure on the Structure and Electrical Properties of AlScN Thin Films[J]. Journal of Inorganic Materials, 2026, 41(4): 486-492.

图/表 7

图1 不同工作气压下制备的Al0.71Sc0.29N薄膜的XPS谱图

Fig. 1 XPS spectra of Al0.71Sc0.29N films deposited at different working pressures (a-c) Al2p; (d-f) Sc2p and N1s

表1 不同工作气压制备的Al0.71Sc0.29N薄膜中各元素的原子百分比

Table 1 Atomic percentages of elements for Al0.71Sc0.29N films prepared at different working pressures

Working pressure/Pa	Al/%	Sc/%	N/%	O/%
0.27	29.64	13.33	43.12	13.39
0.52	31.58	12.59	40.79	15.05
0.93	30.42	12.60	34.56	22.42

图2 不同工作气压下制备的Al0.71Sc0.29N薄膜的XRD图谱、薄膜沉积速率和晶格参数

Fig. 2 XRD patterns, deposition rates and lattice parameters of Al0.71Sc0.29N films deposited at different working pressures (a) XRD patterns; (b) Deposition rate, intensity and full width at half maximum (FWHM) of the (0002) diffraction peak; (c) GIXRD patterns; (d) Calculated lattice parameters c, a and c/a

图3 Al0.71Sc0.29N薄膜的表面形貌

Fig. 3 Surface morphologies of Al0.71Sc0.29N films (a) Samples deposited at different working pressures (×100 k); (b) Sample deposited at 0.93 Pa (×200 k)

图4 不同工作气压下Al0.71Sc0.29N薄膜的P-E曲线和I-E曲线

Fig. 4 P-E and I-E curves for Al0.71Sc0.29N films deposited at different working pressures

图5 不同工作气压下Al0.71Sc0.29N薄膜I-t拟合示例(a)、矫顽场强和剩余极化强度(b)

Fig. 5 I-t curve fitting (a), coercive electric field and remanent polarization (b) of Al0.71Sc0.29N films deposited at different working pressures Colorful figures are available on website

图6 不同工作气压下Al0.71Sc0.29N薄膜的静态J-E曲线(a)和不同场强下的电流密度(b)

Fig. 6 Static J-E curves (a) and current density at different electric fields (b) of Al0.71Sc0.29N films deposited at different working pressures

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工作气压对AlScN薄膜结构和电学性能的影响

Effects of Working Pressure on the Structure and Electrical Properties of AlScN Thin Films

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