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无机材料学报

无机材料学报

• 研究论文 •    

工作气压对AlScN薄膜结构和电学性能的影响

隋金洋1, 周大雨1, 赵文瑾1, 童祎2, 王新朋2   

  1. 1.大连理工大学 材料科学与工程学院,大连 116024;
    2.苏州实验室,苏州 215123
  • 收稿日期:2025-08-22 修回日期:2025-10-04
  • 通讯作者: 周大雨, 教授. E-mail: zhoudayu@dlut.edu.cn
  • 作者简介:隋金洋(1998-), 女, 博士. E-mail: 2020sjy@mail.dlut.edu.cn
  • 基金资助:
    国家自然科学基金(52472120); 中央高校基本科研业务费资助项目(DUT24LAB117); 苏州实验室科研项目 (SK-1202-2024-012)

Effects of Working Pressure on the Structure and Electrical Properties of AlScN Thin Films

SUI Jinyang1, ZHOU Dayu1, ZHAO Wenjin1, TONG Yi2, WANG Xinpeng2   

  1. 1. School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024, China;
    2. Suzhou Laboratory, Suzhou 215123, China
  • Received:2025-08-22 Revised:2025-10-04
  • Contact: ZHOU Dayu, professor. E-mail: zhoudayu@dlut.edu.cn
  • About author:SUI Jinyang (1998–), female, PhD candidate. E-mail: 2020sjy@mail.dlut.edu.cn
  • Supported by:
    National Natural Science Foundation of China (52472120); Fundamental Research Funds for the Central Universities of China (DUT24LAB117); Suzhou Laboratory Project (SK-1202-2024-012)

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摘要： 自2019年Al1-xScxN薄膜的铁电性能被实验报道以来,纤锌矿结构铁电材料在全球范围内受到广泛关注。然而,其铁电性能对制备工艺的强烈依赖性仍然是一个重大挑战,限制了其在实际器件应用中的集成。本研究旨在系统研究溅射工作气压对Al1-xScxN薄膜微观结构及相应铁电特性的影响。核心目标在于确定优异铁电性能的最佳工作气压窗口,并揭示其背后结构与性能的关联机制。本研究在纯氮气气氛下,采用反应磁控溅射技术在硅衬底上制备Al0.71Sc0.29N薄膜,工作气压范围为0.27~1.33 Pa。通过X射线衍射、扫描电子显微镜和铁电测试仪等表征手段,系统分析了薄膜的晶体结构、表面形貌与铁电性能间的关联。结果表明,工作气压显著影响Al0.71Sc0.29N薄膜的结晶质量,在0.52 Pa条件下制备的薄膜具有最佳结晶质量和最优异铁电性能。随着工作气压增加,薄膜表面开始出现棱锥状结构并逐渐增多,且静态漏电流逐渐减小。本研究证实工作气压是调控Al1-xScxN薄膜结构与铁电性能的决定性因素之一。工作气压诱导的薄膜形貌变化及漏电流抑制,为设计高性能新型矿铁电器件提供了重要参考。

关键词: AlScN薄膜, 工作气压, 微观结构, 铁电性能

Abstract: Since the ferroelectric properties of Al1-xScxN thin films were experimentally confirmed in 2019, wurtzite-structured ferroelectric materials have received widespread attention worldwide. However, the strong dependence of their ferroelectric performance on deposition parameters remains a significant challenge, limiting their reliable integration into practical device applications. This study aims to systematically investigate the influence of sputtering working pressure on the microstructural evolution and resultant ferroelectric properties of Al1-xScxN thin films. The primary goal is to identify the optimal pressure window that yields superior ferroelectric performance and to understand the underlying structure-property relationships. Al0.71Sc0.29N thin films were deposited on silicon substrates using reactive magnetron sputtering in a pure nitrogen atmosphere, varied the working pressure from 0.27 Pa to 1.33 Pa. The correlation between the crystal structure, surface morphology, and ferroelectric properties of the thin film was systematically analyzed through characterization methods such as X-ray diffraction, scanning electron microscopy, and a ferroelectric testing instrument. The results showed that the working pressure significantly affected the crystallization quality of Al0.71Sc0.29N thin films, and the thin films prepared under 0.52 Pa had the best crystallization quality and excellent ferroelectric properties. As the working pressure increases, pyramid-like structures begin to appear on the surface of the film and gradually increase, and the static leakage current gradually decreases. This work conclusively demonstrates that sputtering working pressure is one of the decisive factors in tuning the microstructure and ferroelectricity of Al1-xScxN films. The correlation between working pressure-induced morphological changes and leakage current suppression offers valuable insights for engineering high-performance wurtzite ferroelectric devices.

Key words: AlScN films, working pressure, micro-structure, ferroelectric properties

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