Fabrication of 8-inch N-type 4H-SiC Single Crystal Substrate with Low Dislocation Density

doi:10.15541/jim20230325

Journal of Inorganic Materials ›› 2023, Vol. 38 ›› Issue (11): 1371-1372.DOI: 10.15541/jim20230325

• SCI-TECH DEVELOPMENT • Previous Articles

Fabrication of 8-inch N-type 4H-SiC Single Crystal Substrate with Low Dislocation Density

XIONG Xixi¹(), YANG Xianglong¹(), CHEN Xiufang¹(), LI Xiaomeng¹, XIE Xuejian¹, HU Guojie¹, PENG Yan¹, YU Guojian², HU Xiaobo¹, WANG Yaohao², XU Xiangang¹

1. Institute of Novel Semiconductors, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
2. Guangzhou Summit Crystal Semiconductor Co., Ltd., Guangzhou 511458, China

Received:2023-07-18 Revised:2023-08-04 Published:2023-08-21 Online:2023-08-21
Contact: YANG Xianglong, associate professor. E-mail: yangxl2016@sdu.edu.cn;
CHEN Xiufang, professor. E-mail: cxf@sdu.edu.cn
About author:XIONG Xixi (1994-), male, PhD candidate. E-mail: xiongxixi@summitcrystal.com
Supported by:
National Natural Science Foundation of China(52022052);National Natural Science Foundation of China(62004118);Shandong Province Key R&D Program(2022ZLGX02)

Abstract

Abstract:

Silicon carbide (SiC) has wide application in electric vehicles, rail transit, high voltage power transmission and transformation, photovoltaic, and 5G communication owing to its excellent physical and chemical properties. 8-inch SiC substrate has great potential in reducing unit cost of devices and increasing capacity supply, and has become an important technology development direction of the industry. Recently, Shandong University and Guangzhou Summit Crystal Semiconductor Co., Ltd. have made a major breakthrough in the control of dislocation defects in 8-inch SiC substrates. The 8-inch n-type 4H-SiC single crystal substrate with low dislocation density has been fabricated by physical vapor transport (PVT) method, of which the threading screw dislocation (TSD) density is 0.55 cm^-2, and the basal plane dislocation (BPD) density is 202 cm^-2.

Key words: 4H-SiC, 8-inch, low dislocation density, single crystal substrate

CLC Number:

TQ174

XIONG Xixi, YANG Xianglong, CHEN Xiufang, LI Xiaomeng, XIE Xuejian, HU Guojie, PENG Yan, YU Guojian, HU Xiaobo, WANG Yaohao, XU Xiangang. Fabrication of 8-inch N-type 4H-SiC Single Crystal Substrate with Low Dislocation Density[J]. Journal of Inorganic Materials, 2023, 38(11): 1371-1372.

Figures/Tables 2

References 10

[1]	SIERGIEJ R R, CLARKE R C, SRIRAM S, et al. Advances in SiC materials and devices: an industrial point of view. Materials Science and Engineering: B, 1999, 61: 9.
[2]	CASADY J B, JOHNSON R W. Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: a review. Solid State Electron, 1996, 39(10): 1409. DOI URL
[3]	CHENG L, PALMOUR J W, AGARWAL A K, et al. Strategic overview of high-voltage SiC power device development aiming at global energy savings. Materials Science Forum, 2014, 778: 1089.
[4]	MORVAN E, KERLAIN A, DUA C, et al. Influence of material properties on wide-bandgap microwave power device characteristics. Materials Science Forum, 2003, 433: 731.
[5]	MAKAROV Y N, LITVIN D, VASILIEV A, et al. Sublimation growth of 4 and 6 inch 4H-SiC low defect bulk crystals in Ta (TaC) crucibles. Materials Science Forum, 2016, 858: 101. DOI URL
[6]	CHOI J W, KIM J G, JANG B K, et al. Modified hot-zone design for large diameter 4H-SiC single crystal growth. Materials Science Forum, 2019, 963: 18. DOI URL
[7]	PENG Y, CHEN X F, PENG J, et al. Study on the growth of high quality semi-insulating ϕ150 mm 4H-SiC single crystal. Journal of Synthetic Crystals, 2016, 45(5): 1145.
[8]	YANG X L, CHEN X F, XIE X J, et al. Growth of 8 inch conductivity type 4H-SiC single crystals. Journal of Synthetic Crystals, 2022, 51(9): 1745.
[9]	LOU Y F, GONG T C, ZHANG W, et al. Fabrication and characterizations of 8-inch n type 4H-SiC single crystal substrate. Journal of Synthetic Crystals, 2022, 51(12): 2131.
[10]	YANG G, LIU X S, LI J J. et al. Dislocations in 4H silicon carbide single crystals. Journal of Synthetic Crystals, 2022, 51(9): 1673.

[1]	WANG Mengmeng, TIAN Li, ZHANG Junmin, LI Qinggang, YANG Jinshan, DONG Shaoming. Highly Efficient EMI Shielding via 3D-printed CNT/SiC-SiO₂ Architectures [J]. Journal of Inorganic Materials, 2026, 41(6): 831-838.
[2]	HONG Enliu, TU Xinchen, LI Ziqing, FANG Xiaosheng. Two-dimensional Perovskite Single Crystal Nanosheets: Floating Growth and Optoelectronic Performance [J]. Journal of Inorganic Materials, 2026, 41(6): 787-794.
[3]	LI Hantao, SHEN Qiang, LUO Guoqiang, WANG Xuefei, GAO Ming, CHEN Chen. Research Progress on Structure and Performance Regulation of Silicon-based Anode Materials via Mechanical Ball Milling [J]. Journal of Inorganic Materials, 2026, 41(5): 561-572.
[4]	QIAN Xinyu, WANG Wudi, GUO Junyao, REN Yongchun, DONG Jianshu, WANG Qingguo, TANG Huili, ZHANG Chenbo, XU Xiaodong, DONG Yongjun, HUA Wei, XU Jun. Spectroscopic Analysis of Ho:BaF₂ Crystals in the NIR to MIR Spectral Region [J]. Journal of Inorganic Materials, 2026, 41(5): 595-603.
[5]	ZHU Kaihuang, YANG Shijie, LI Xinge, SONG Guanqing, SHI Gansheng, WANG Yan, REN Xiaomeng, LU Yao, XU Xinhong, SUN Jing. Graphene Oxide Modified UiO-66 Based Metal Organic Framework Gel: Preparation and Efficient Toluene Adsorption Performance [J]. Journal of Inorganic Materials, 2026, 41(4): 519-526.
[6]	JIANG Shengnan, ZHENG Zhong, HE Weiyi, LIU Tao, PAN Xiuhong, CHEN Kun, GUO Hui, GAO Pan, LIU Chunjun, LIU Xuechao. Preparation and Performance Optimization of Boron-gallium Co-doped Zinc Oxide Transparent Electrodes [J]. Journal of Inorganic Materials, 2026, 41(4): 479-485.
[7]	XU Hao, GU Haitao, WU Honghui, YUE Xiaofei, LIN Siqi, JIN Min. Crystal Growth and Properties of Bi-doped InSe [J]. Journal of Inorganic Materials, 2026, 41(4): 493-499.
[8]	ZHANG Mengjie, LI Zhibo, HUANG Ruinan, LÜ Xiangfei, WANG Wei. Cordierite/Aluminum Borate Whiskers/Co_0.8Fe_xCe_0.2-_xCr₂O₄ Catalysts: Preparation and Filtration Catalytic Performance for Carbon Soot [J]. Journal of Inorganic Materials, 2026, 41(4): 509-518.
[9]	SUI Jinyang, ZHOU Dayu, ZHAO Wenjin, TONG Yi, WANG Xinpeng. Effects of Working Pressure on the Structure and Electrical Properties of AlScN Thin Films [J]. Journal of Inorganic Materials, 2026, 41(4): 486-492.
[10]	CHENG Aopeng, WANG Yuewen, XU Wentao, LIU Quanwei, ZHANG Haitao, ZHOU Youfu. Fabrication of Graphene-reinforced Alumina Ceramic Composites via Adsorption-precipitation Self-assembly Combined with Spark Plasma Sintering [J]. Journal of Inorganic Materials, 2026, 41(4): 536-544.
[11]	LI Xuan, YE Kuicai, FENG Jiayin, QIU Jiajun, QIAN Wenhao, XING Min. Surface Modification of Titanium-based Dental Implants for Soft Tissue Sealing: A Review [J]. Journal of Inorganic Materials, 2026, 41(4): 432-444.
[12]	WANG Yuhe, LUO Yixiu, GUO Huiming, ZHANG Guangheng, ZHANG Siyan, SUN Luchao, WANG Jiemin, WANG Jingyang. First-principles Investigation of Elastic and Thermophysical Properties of High-entropy Rare-earth Oxide Thermal Barrier Coating Materials [J]. Journal of Inorganic Materials, 2026, 41(4): 445-454.
[13]	LI Zexi, LU Wenjie, WANG Chao, ZHANG Lu, LI Shuti, GAO Fangliang. Two-dimensional GaN: Preparation Based on Liquid Metal Gallium and Photoelectric Properties [J]. Journal of Inorganic Materials, 2026, 41(3): 377-384.
[14]	TIAN Hongwang, LUO Longfei, HU Chenglong, YAN Meng, PANG Shengyang, LI Jian, TANG Sufang. Facile Fabrication of Ceramic-resin Coatings on C/CA Composites for Oxidation Protection at Medium Temperatures [J]. Journal of Inorganic Materials, 2026, 41(3): 401-408.
[15]	DENG Hengyang, QIN Cuijie, HAO Shenglan, FENG Guangdi, ZHU Qiuxiang, TIAN Bobo, CHU Junhao, DUAN Chungang. A Rectifier Bridge Circuit Based on Metal-semiconductor-metal Fin Tunneling Diode for High-frequency Application [J]. Journal of Inorganic Materials, 2026, 41(2): 253-261.

Fabrication of 8-inch N-type 4H-SiC Single Crystal Substrate with Low Dislocation Density

RichHTML

PDF (PC)

Knowledge

Abstract

Cite this article

share this article

Figures/Tables 2

References 10

Related Articles 15

Recommended Articles

Metrics

Comments