Fabrication of 8-inch N-type 4H-SiC Single Crystal Substrate with Low Dislocation Density

doi:10.15541/jim20230325

Journal of Inorganic Materials ›› 2023, Vol. 38 ›› Issue (11): 1371-1372.DOI: 10.15541/jim20230325

• SCI-TECH DEVELOPMENT • Previous Articles

Fabrication of 8-inch N-type 4H-SiC Single Crystal Substrate with Low Dislocation Density

XIONG Xixi¹(), YANG Xianglong¹(), CHEN Xiufang¹(), LI Xiaomeng¹, XIE Xuejian¹, HU Guojie¹, PENG Yan¹, YU Guojian², HU Xiaobo¹, WANG Yaohao², XU Xiangang¹

1. Institute of Novel Semiconductors, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
2. Guangzhou Summit Crystal Semiconductor Co., Ltd., Guangzhou 511458, China

Received:2023-07-18 Revised:2023-08-04 Published:2023-08-21 Online:2023-08-21
Contact: YANG Xianglong, associate professor. E-mail: yangxl2016@sdu.edu.cn;
CHEN Xiufang, professor. E-mail: cxf@sdu.edu.cn
About author:XIONG Xixi (1994-), male, PhD candidate. E-mail: xiongxixi@summitcrystal.com
Supported by:
National Natural Science Foundation of China(52022052);National Natural Science Foundation of China(62004118);Shandong Province Key R&D Program(2022ZLGX02)

Abstract

Abstract:

Silicon carbide (SiC) has wide application in electric vehicles, rail transit, high voltage power transmission and transformation, photovoltaic, and 5G communication owing to its excellent physical and chemical properties. 8-inch SiC substrate has great potential in reducing unit cost of devices and increasing capacity supply, and has become an important technology development direction of the industry. Recently, Shandong University and Guangzhou Summit Crystal Semiconductor Co., Ltd. have made a major breakthrough in the control of dislocation defects in 8-inch SiC substrates. The 8-inch n-type 4H-SiC single crystal substrate with low dislocation density has been fabricated by physical vapor transport (PVT) method, of which the threading screw dislocation (TSD) density is 0.55 cm^-2, and the basal plane dislocation (BPD) density is 202 cm^-2.

Key words: 4H-SiC, 8-inch, low dislocation density, single crystal substrate

CLC Number:

TQ174

XIONG Xixi, YANG Xianglong, CHEN Xiufang, LI Xiaomeng, XIE Xuejian, HU Guojie, PENG Yan, YU Guojian, HU Xiaobo, WANG Yaohao, XU Xiangang. Fabrication of 8-inch N-type 4H-SiC Single Crystal Substrate with Low Dislocation Density[J]. Journal of Inorganic Materials, 2023, 38(11): 1371-1372.

Figures/Tables 2

References 10

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Fabrication of 8-inch N-type 4H-SiC Single Crystal Substrate with Low Dislocation Density

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