Journal of Inorganic Materials ›› 2017, Vol. 32 ›› Issue (1): 69-74.DOI: 10.15541/jim20160170
• Orginal Article • Previous Articles Next Articles
FU Chao-Li1, 2, YANG Yong1, MA Yun-Feng1, WEI Yu-Quan1, JIAO Zheng2, HUANG Zheng-Ren1
Received:
2016-03-23
Revised:
2016-05-31
Published:
2017-01-20
Online:
2016-12-15
About author:
FU Chao-Li. E-mail: cheerfulfcl@163.com
CLC Number:
FU Chao-Li, YANG Yong, MA Yun-Feng, WEI Yu-Quan, JIAO Zheng, HUANG Zheng-Ren. APS Bias Voltage on Properties of HfO2 Laser Films Deposited by Reactive Plasma Ion Assisted Electron Evaporation[J]. Journal of Inorganic Materials, 2017, 32(1): 69-74.
Samples | APS bias voltage/V | APS discharge current/A | Rate/(nm·s-1) | Temperature/℃ | EBG-O2/sccm | APS-O2/sccm |
---|---|---|---|---|---|---|
1# | 120 | 55 | 0.1 | 200 | 30 | 45 |
2# | 110 | 55 | 0.1 | 200 | 30 | 45 |
3# | 100 | 55 | 0.1 | 200 | 30 | 45 |
4# | 90 | 55 | 0.1 | 200 | 30 | 45 |
5# | 70 | 55 | 0.1 | 200 | 30 | 45 |
Table 1 Deposition conditions of HfO2 films
Samples | APS bias voltage/V | APS discharge current/A | Rate/(nm·s-1) | Temperature/℃ | EBG-O2/sccm | APS-O2/sccm |
---|---|---|---|---|---|---|
1# | 120 | 55 | 0.1 | 200 | 30 | 45 |
2# | 110 | 55 | 0.1 | 200 | 30 | 45 |
3# | 100 | 55 | 0.1 | 200 | 30 | 45 |
4# | 90 | 55 | 0.1 | 200 | 30 | 45 |
5# | 70 | 55 | 0.1 | 200 | 30 | 45 |
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