Influence of Si4+ Ion on Scintillation Properties and Radiation Hardness of Y3+ Doping PbWO4 Crystals

Abstract

Abstract: Based on the fact that the exceptional irradiation behaviors are prominent at the top part of Y³⁺ doping PWO crystals while exposed to low dose rate γa-ray,
previous studies concluded that this phenomenon was caused by enrichment of impurities such as Na⁺, K⁺ and Si⁴⁺ whose segregation coefficient are smaller
than 1. In this paper, the relationships among annealing, optical transmission and radiation hardness of Si⁴⁺ ion contained Y³⁺: PWO crystals were
investigated. The experimental results show that the Si⁴⁺ ions do not influence optical transmission and radiation hardness of Y³⁺: PWO crystals at the concentration
involved in the study. It can be concluded that the exceptional irradiation behaviors of Y³⁺: PWO crystals do not relate to the contamination of Si⁴⁺ ion.

Key words: lead tungstate, doping, radiation hardness, scintillation

CLC Number:

ZHANG Xin,LIAO Jing-Ying,XIE Jian-Jun,SHEN Bing-Fu,SHAO Pei-Fa,LI Chang-Quan,YUAN Hui,YIN Zhi-Wen. Influence of Si⁴⁺ Ion on Scintillation Properties and Radiation Hardness of Y³⁺ Doping PbWO₄ Crystals[J]. Journal of Inorganic Materials.

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Influence of Si⁴⁺ Ion on Scintillation Properties and Radiation Hardness of Y³⁺ Doping PbWO₄ Crystals

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