Oxidation Behavior at 1000-1300 ℃ in air of Ti2AlC-20TiB2 Synthesized by in-situ Reaction/Hot Pressing

doi:10.15541/jim20240352

Abstract

Abstract:

Ti₂AlC is considered to be one of the compounds with the best antioxidant properties in MAX phase materials, with potential application prospects in the field of high-temperature structural materials and high-temperature antioxidant protective coatings. However, the low hardness and strength of single phase Ti₂AlC limit its wide application in the field of high-temperature material. In order to improve the properties of Ti₂AlC, Ti₂AlC-20%TiB₂(in volume) composites (referred to as Ti₂AlC-20TiB₂) were synthesized by the in-situ solid-liquid phase reaction/hot pressing method. Besides, the high temperature oxidation behavior in the temperature range of 1000-1300 ℃ was studied, and the oxidation resistance mechanism at high temperature was analyzed. The results show that the oxidation kinetics of Ti₂AlC-20TiB₂ composites is logarithmic, exhibiting superior oxidation resistance compared to single phase Ti₂AlC. Below 1200 ℃, the oxide scale is mainly composed of an inner layer of Al₂O₃ and an outer layer of TiO₂, while the outer layer of oxide scale is a mixture of TiO₂ and Al₂TiO₅ at 1300 ℃. The Al₂O₃ protective layer formed in the composite is denser than that in single-phase Ti₂AlC, which is the key to its excellent antioxidant performance. The addition of TiB₂ reduces the grain size of the material and increases the number of grain boundaries for short-circuit diffusion, which facilitates the selective oxidation of Al and accelerates the formation of Al₂O₃ protective layer. Additionally, B₂O₃ produced during the oxidation of TiB₂ can effectively fill the micropores and repair microcracks, thereby preventing the internal diffusion of O and further enhancing the antioxidant properties of the composites.

Key words: Ti₂AlC-TiB₂ composite, high-temperature oxidation behavior, oxidation protective layer, high-temperature oxidation resistance mechanism

CLC Number:

TB332

WANG Wenting, XU Jingjun, MA Ke, LI Meishuan, LI Xingchao, LI Tongqi. Oxidation Behavior at 1000-1300 ℃ in air of Ti₂AlC-20TiB₂ Synthesized by in-situ Reaction/Hot Pressing[J]. Journal of Inorganic Materials, 2025, 40(1): 31-38.

Figures/Tables 9

Fig. 1 Surface morphology of Ti2AlC-20TiB2 composite and EDS element mappings of Al, C, and B

Fig. 2 Morphologies of the etched surface with inserts showing the statistical distribution of particle size (a) Ti2AlC; (b) Ti2AlC-20TiB2

Fig. 3 Oxidation kinetics of Ti2AlC-20TiB2 composite at 1000-1300 ℃ in air (a) Δm/A vs. t; (b) Δm/A vs. ln(t/t0+1)

Table 1 k, t0, R2 by fitting the oxidation kinetics curves in Fig. 3(a) and kc of Ti2AlC[8]

Temperature		1000 ℃	1100 ℃	1200 ℃	1300 ℃
Ti₂AlC- 20TiB₂	k	0.0656	0.1355	0.0920	0.2849
	t₀	0.0918	0.0488	0.1313	0.6860
	R²	99.50	99.47	99.72	99.77
Ti₂AlC	k_c	2.38×10^-12	1.54×10^-11	1.12×10^-10	2.13×10^-10

Fig. 4 XRD patterns of Ti2AlC-20TiB2 composite before and after oxidation at 1000-1300 ℃ in air for 10 h (a) Before oxidation; (b) 1000 ℃; (c) 1100 ℃; (d) 1200 ℃; (e) 1300 ℃

Fig. 5 Surface morphologies of Ti2AlC-20TiB2 composite oxidized at 1000-1300 ℃ in air for 10 h and EDS element mappings of O, Al, and Ti (a) 1000 ℃; (b) 1100 ℃; (c) 1200 ℃; (d) 1300 ℃

Fig. 6 Surface morphologies of Ti2AlC oxidized at 1000-1300 ℃ in air for 10 h and EDS element mappings of O, Al, and Ti (a) 1000 ℃; (b) 1100 ℃; (c) 1200 ℃; (d) 1300 ℃

Fig. 7 Cross-sectional morphologies of Ti2AlC-20TiB2 composite oxidized at 1000-1300 ℃ in air for 10 h and EDS element mappings of O, Al, and Ti (a) 1000 ℃; (b) 1100 ℃; (c) 1200 ℃; (d) 1300 ℃

Fig. 8 Cross-sectional morphologies of Ti2AlC oxidized at 1000-1300 ℃ in air for 10 h and EDS element mappings of O, Al, and Ti (a) 1000 ℃; (b) 1100 ℃; (c) 1200 ℃; (d) 1300 ℃

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Oxidation Behavior at 1000-1300 ℃ in air of Ti₂AlC-20TiB₂ Synthesized by in-situ Reaction/Hot Pressing

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