Microstructure and Electrical Properties of PMN-PT Thin Films Prepared by Oxygen Plasma Assisted Pulsed Laser Deposition

doi:10.3724/SP.J.1077.2011.11299

Abstract

Abstract: Lead magnesium niobate-lead titanate (PMN-PT) ferroelectric thin films with composition near the morphotropic phase boundary (MPB) were deposited on Si substrate by oxygen plasma assisted pulsed laser deposition (PLD). Highly (001)-oriented PMN-PT thin films with lower oxygen defect and higher crystalline property were obtained. The results show that the microstructure and electrical properties of PMN-PT thin films strongly depend on the partial pressure and the activity of oxygen in the deposition process. With the use of oxygen plasma, the dielectric constant of the PMN-PT thin film is increased from 1484 to 3012, the remnant polarization (2P_r) changes from 18 μC/cm2 to 38 μC/cm².

Key words: pulse laser deposition, PMN-PT thin films, microstructure, electrical properties

CLC Number:

TQ174

HE Yong, LI Xiao-Min, GAO Xiang-Dong, LENG Xue, WANG Wei. Microstructure and Electrical Properties of PMN-PT Thin Films Prepared by Oxygen Plasma Assisted Pulsed Laser Deposition[J]. Journal of Inorganic Materials, 2011, 26(11): 1227-1232.

References

[1] Zhao X Y, Fang B J, Cao H, et al. Dielectric and piezoelectric performance of PMN-PT single crystals with compositions around the MPB: influence of composition, poling field and crystal orientation. Mat. Sci. Eng. B-Solid, 2002, 96(3): 254-262.

[2] Park S E, Shrout T R. Ultrahigh strain and piezoelectric behavior in relaxor based ferroelectric single crystals. J. Appl. Phys., 1997, 82(4): 1804-1811.

[3] Dawber M, Rabe K M, Scott J F. Physics of thin-film ferroelectric oxides. Rev. Mod. Phys., 2005, 77(4): 1083-1130.

[4] Lin T, Meng X J, Sun J T, et al. Effect of LaNiO3 buffer layers on the structure and electrical properties of Sol-Gel-derived Pb(Mg1/3Nb2/3)O3PbTiO3 thin films. Appl. Phys. A-Matter, 2005, 81(5): 1025-1028.

[5] Herdier R, Detalle M, Jenkins D, et al. The properties of epitaxial PMNT thin films grown on SrTiO3 substrates. J. Cryst. Growth, 2008, 311(1): 123-127.

[6] Tantigate C, Lee J, Safari A. Processing and properties of Pb(Mg1/3Nb2/3)O3-PbTiO3 thin-films by pulsed-laser deposition. Appl. Phys. Lett., 1995, 66(13): 1611-1613.

[7] Wu F, Li X M, Yu W D, et al. Preparation, microstructure and electrical properties of 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 films on different epitaxial bottom electrodes buffered Si substrates. J. Crystal Growth, 2008, 310(3): 575-578.

[8] Laha A, Bhattacharyya S, Krupanidhi S B. Impact of microstructure on dielectric properties of Pb(Mg1/3Nb2/3)O3-PbTiO3 thin films. Mat. Sci. Eng. B-Solid, 2004, 106(2): 111-119.

[9] Bu S B, Lee M K, Eom C B, et al. Perovskite phase stabilization in epitaxial Pb(Mg1/3Nb2/3)O3-PbTiO3 films by deposition onto vicinal (001) SrTiO3 substrates. App. Phys. Lett., 2001, 79(21): 3482-3484.

[10] Tantigate C, Safari A. Preparation of Pb(Mg1/3Nb2/3)O3-PbTiO3 thin films on silicon substrates by pulsed laser deposition. Microelectron Eng., 1995, 29(1-4): 115-118.

[11] Nakamura T, Masuda A, Morimoto A, et al. Influence of buffer layers on lead magnesium niobate titanate thin films prepared by pulsed laser ablation. Jpn. J. Appl. Phys., 1996, 35(9A): 4750-4754.

[12] Chen T L, Li X M, Zhang X. Epitaxial growth of atomic-scale smooth Ir electrode films on MgO buffered Si(100) substrates by PLD. J. Crystal Growth, 2004, 267(1/2): 80-84.

[13] Chen T L, Li X M, Zhang X, et al. Preparation of single- crystal-like MgO films on Si and orientation control of platinum films on MgO/Si. Appl. Phys. A-Matter, 2004, 79(8): 1857-1860.

[14] Donnelly N J, Catalan G, Morros C, et al. Dielectric and electromechanical properties of Pb(Mg1/3,Nb2/3)O3-PbTiO3 thin films grown by pulsed laser deposition. J. Appl. Phys., 2003, 93(12): 9924-9929.

[15] Maria J P, Hackenberger W, Trolier-McKinstry S. Phase development and electrical property analysis of pulsed laser deposited Pb(Mg1/3Nb2/3)O3-PbTiO3 (70/30) epitaxial thin films. J. Appl. Phys., 1998, 84(9): 5147-5154.

[16] Idink H, White W B. Raman-spectroscopic study of order-disorder in lead magnesium niobate. J. Appl. Phys., 1994, 76(3): 1789-1793.

[17] Qu W, Zhao X, Tan X. Evolution of nanodomains during the electric-field-induced relaxor to normal ferroelectric phase transition in a Sc-doped Pb(Mg1/3Nb2/3)O3 ceramic. J. Appl. Phys., 2007, 102(8): 084101-1-8.

[18] Jiang F, Kojima S. Study of three different relaxor ferroelectrics by high resolution micro-Brillouin scattering. Jpn. J. Appl. Phys., 2000, 39(9B): 5704-5710.

[19] Samara G A. The relaxational properties of compositionally disordered ABO3 perovskites. J. Phys.: Condens. Matter, 2003, 15(9): R367-R411.

[20] Vakhrushev S B, Naberezhnov A A, Dkhil B, et al. Structure of nanodomains in relaxors. Fundamental Physics of Ferroelectrics, 2003, 677: 74-83.

[21] Es-Souni M, Abed M, Piorra A, et al. Microstructure and properties of Sol-Gel processed Pb1-xLax(Zr0.52, Ti0.48)1-x/4O3 thin films. The effects of lanthanum content and bottom electrodes. Thin Solid Films, 2001, 389(1/2): 99-107.

[22] Park C H, Chadi D J. Microscopic study of oxygen-vacancy defects in ferroelectric perovskites. Phys. Rev. B, 1998, 57(22): R13961-R13964.

[23] Pintilie L, Boerasu I, Gomes M, et al. Metal-ferroelectric-metal structures with Schottky contacts. II. Analysis of the experimental current-voltage and capacitance-voltage characteristics of Pb(Zr,Ti)O3 thin films. J. Appl. Phys., 2005, 98(12): 124104-1-8.