Journal of Inorganic Materials ›› 2010, Vol. 25 ›› Issue (12): 1281-1285.DOI: 10.3724/SP.J.1077.2010.01281

• Research Paper • Previous Articles     Next Articles

Microstructure of SiC Fiber Fabricated by Three-stage Chemical Vapor Deposition

ZHANG Rong-Jun, YANG Yan-Qing, WANG Chen, SHEN Wen-Tao, LUO Xian   

  1. (State Key Lab of Solidification Processing, Northwestern Polytechnical University, Xi’an 710072, China)
  • Received:2010-03-14 Revised:2010-04-22 Published:2010-12-20 Online:2010-11-24
  • Supported by:

    National Nature Science Foundation of China (50871086); Research Project of State Key Laboratory of Solidification Processing (KP200906)

Abstract: Continuous silicon carbide (SiC) fiber with carbon coating was fabricated by three-stage chemical vapor deposition (CVD) on tungsten filament heated by direct current (DC), using CH3SiCl3 +H2 as gaseous reactant for SiC sheath and C2H2 for the outmost carbon coating, respectively. Microstructure of the SiC fiber was examined by X-ray diffraction (XRD), scanning electron microscope (SEM), Raman spectroscope and transmission electron microscope (TEM). The results show that the SiC fiber consists of tungsten core, a W/SiC interfacial reaction zone, two layers of SiC with total thickness of 41μm and an outermost carbon coating of about 2 μm in thick. The deposited SiC is mainly composed of beta-SiC, and exhibits strong <111> fiber texture with abundant growth defects, such as co-deposit of free silicon and stacking faults, leading to the lattice imperfection of the SiC sheath. Raman spectrum indicates that the outmost carbon coating decomposed from C2H2 involves a mixture of amorphous carbon and graphite crystallite.

Key words: SiC fiber, chemical vapor deposition, microstructure, defects, Raman spectra

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