C/SiOC Composites by a Modified PIP Using Solid Polysiloxane: Fabrication, Microstructure and Mechanical Properties

doi:10.15541/jim20190080

Abstract

Abstract:

A modified polymer infiltration and pyrolysis method (PIP) was developed to enhance the densification of C/SiOC composites, using molten MK resin (polymethylsilsesquioxane) as precursor. Organic sulfonic acid was added as cross-linking agent to lower the curing temperature. The cross-linking mechanism and ceramization behavior of MK resin was studied. A high ceramic yield of about 85wt% and low free carbon content below 3wt% are achieved, with excellent high-temperature stability of the derived SiOC. The modified PIP approach presents a high densification efficiency. After only 8 PIP cycles, the final C/SiOC composites possess a density of about 1.81 g/cm ³. Compared with those composites fabricated by conventional PIP process, the C/SiOC composites prepared by modified PIP process show a much denser microstructure with much more improved densification efficiency. Bending strength of the as-fabricated C/SiOC composites is of (312±25) MPa, showing obvious non-brittle fracture behavior.

Key words: C/SiOC composite, high-efficient PIP, microstructure, cross-linking mechanism

CLC Number:

TQ174

WU Qing-Qing, WANG Zhen, DING Qi, NI De-Wei, KAN Yan-Mei, DONG Shao-Ming. C/SiOC Composites by a Modified PIP Using Solid Polysiloxane: Fabrication, Microstructure and Mechanical Properties[J]. Journal of Inorganic Materials, 2019, 34(12): 1349-1356.

Figures/Tables 13

References 30

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CLA content/wt%	Ceramic yield/wt%	Si/wt%	O/wt%	C/wt%	Empirical formula	Free C/wt%
0	83.7	53.17	33.96	12.87	0.56SiO₂·0.44SiC+0.12C_free	2.82
0.01	85.1	53.13	33.89	12.98	0.56SiO₂·0.44SiC+0.13C_free	2.92
0.05	85.7	53.89	33.05	13.06	0.54SiO₂·0.46SiC+0.10C_free	2.36
0.1	84.7	54.46	33.15	13.39	0.54SiO₂·0.46SiC+0.13C_free	2.91
0.5	84.1	54.74	31.54	13.72	0.50SiO₂·0.50SiC+0.09C_free	2.09
1	82.9	53.86	32.57	13.57	0.53SiO₂·0.47SiC+0.12C_free	2.70

CLA content/wt%	Ceramic yield/wt%	Si/wt%	O/wt%	C/wt%	Empirical formula	Free C/wt%
0	83.7	53.17	33.96	12.87	0.56SiO₂·0.44SiC+0.12C_free	2.82
0.01	85.1	53.13	33.89	12.98	0.56SiO₂·0.44SiC+0.13C_free	2.92
0.05	85.7	53.89	33.05	13.06	0.54SiO₂·0.46SiC+0.10C_free	2.36
0.1	84.7	54.46	33.15	13.39	0.54SiO₂·0.46SiC+0.13C_free	2.91
0.5	84.1	54.74	31.54	13.72	0.50SiO₂·0.50SiC+0.09C_free	2.09
1	82.9	53.86	32.57	13.57	0.53SiO₂·0.47SiC+0.12C_free	2.70