SnS掺杂对P3HT/PCBM体系太阳能电池光电特性的影响研究

doi:10.15541/jim20150342

摘要/Abstract

摘要：

采用连续离子层吸附反应法(SILAR)在TiO₂/FTO电极上沉积SnS, 组装结构为FTO/TiO₂/SnS/ P3HT:PCBM/Ag的多层异质结太阳能电池, 结果显示: SnS掺杂能显著提高P3HT/PCBM体系太阳能电池的光电转化性能。通过SEM观察、UV-Vis光谱、J-V曲线、Raman光谱以及射频辉光放电光谱仪(GD-OES)等手段, 系统研究了不同前驱体液浓度制备的SnS对电池的影响, 发现当n(Sn²⁺):n(S^2-)为1:1.5时, 电池的光电转化效率最高, 达到0.369%, 其开路电压、短路电流和填充因子分别达到0.373 V、1.92 mA/cm²和51.2%。另外, GD-OES谱图显示前驱体溶液中Sn²⁺/S^2-比例对于SnS_x层的化学组成及沉淀量具有重要影响, 从而导致复合太阳能电池光电性能的显著变化。

关键词: 太阳能电池, 连续离子层吸附反应, 硫化亚锡, 多层异质结

Abstract:

SnS was deposited on the surface of FTO/TiO₂ electrodes with different molar concentration ratio of Sn²⁺ and S^2- using successive ionic layer absorption and reaction (SILAR) method. Afterwards, the as-prepared TiO₂/SnS composite electrode was assembled into a multilayer heterojunction solar cell with an architecture of FTO/TiO₂/SnS/ P3HT:PCBM/Ag. The TiO₂/SnS composite films were characterized by scanning electron microscopy (SEM), Raman spectra analysis and Glow discharge optical emission spectrometer (GD-OES). The photovoltaic performance of solar cells were determined using UV-Vis spectra and I-V curves. Results showed that incorporation of SnS significantly improved the short-circuit current of the multilayer heterojunction solar cells. Meanwhile, the dependence of the photovoltaic performance of solar cells on the molar concentration ratio of Sn²⁺/S^2- was investigated systematically. During the SILAR processes, a series of electrodes were prepared in the precusor solutions with different Sn²⁺/S^2- molar concentration ratios (n(Sn²⁺):n(S^2-)= 1:1, 1:1.25, 1:1.5, 1:1.75 and 1:2). Moreover, GD-OES method distinguished the effects of Sn²⁺/S^2- ratio on the SnS_x layer deposition. It was found that the Sn²⁺/S^2- ratio of SILAR precursors, dominated by thickness and chemical composition of SnS_x, affected photovoltaic performance of the solar cells significantly. I-V test results testified that the ratio of Sn²⁺/S^2- molar concentration was optimized at 1:1.5, which resulted in the highest photoelectric conversion efficiency. The open-circuit voltage (V_oc), short-circuit current density (J_sc), fill factor (FF), and power conversion efficiency (PCE) reached 0.373 V, 1.92 mA/cm², 51.2%, and 0.369%, respectively.

Key words: solar cells, SILAR, SnS, multilayer heterojunction

中图分类号:

TQ174

陆冠宏, 赵新洛, 王焱, 朱书影, 孙静, 谢晓峰. SnS掺杂对P3HT/PCBM体系太阳能电池光电特性的影响研究[J]. 无机材料学报, 2016, 31(3): 263-268.

LU Guan-Hong, ZHAO Xin-Luo, WANG Yan, ZHU Shu-Ying, SUN Jing, XIE Xiao-Feng. Effects of SnS Doping on Photovoltaic Performance of P3HT:PCBM Multilayer Heterojunction Solar Cells[J]. Journal of Inorganic Materials, 2016, 31(3): 263-268.

图/表 7

图1 多层异质结太阳能电池结构及能级示意图

Fig. 1 Structure and energy-level alignment of the multilayer heterojunction solar cell

图2 TiO2/SnS/P3HT:PCBM复合电极的SEM照片

Fig. 2 SEM images of TiO2/SnS/P3HT:PCBM multilayer electrodes(a) Surface of TiO2 electrode; (b) Side view of TiO2 electrode; (c) Surface of TiO2/SnS composite electrode; (d) Side view of TiO2/SnS composite electrode; (e) Surface of TiO2/SnS/P3HT:PCBM composite electrode; (f) Side view of the multilayer heterojunction solar cell

图3 不同Sn2+/S2-比例前驱体溶液沉积TiO2/SnS复合薄膜的紫外-可见吸收光谱

Fig. 3 UV-Vis adsorption spectra of as-prepared TiO2/SnS films deposited in precusor solutions with different Sn2+/S2- concentration ratios

图4 不同Sn2+/S2-比例前驱体溶液制备多层异质结太阳能电池的I-V曲线

Fig. 4 I-V curves of the multilayer solar cells deposited in precusor solutions with different Sn2+/S2- concentration ratios

表1 S0~S5多层异质结太阳能电池光电性能参数

Table1 Photovoltaic parameters including Voc, Jsc, FF and PCE of the multilayer heterojunction solar cells (S0~S5)

Sample	V_oc/V	J_sc/(mA·cm^-2)	FF/%	PCE/%
S0	0.440	0.81	41.5	0.148
S1	0.286	1.03	47.0	0.139
S2	0.296	1.15	51.9	0.177
S3	0.373	1.92	51.2	0.369
S4	0.269	1.00	48.1	0.129
S5	0.264	1.09	45.7	0.132

图5 不同Sn2+/S2-比例前驱体溶液沉积TiO2/SnS复合电极的拉曼光谱

Fig. 5 Raman spectra of as-prepared TiO2/SnS deposited in precusor solutions with different Sn2+/S2- concentration ratios

图6 S0~S5太阳能电池样品中Sn和S元素分布曲线

Fig. 6 Sn and S elements distribution curves of solar cells (a) S elements distribution curve; (b) Sn elements distribution curve (Ⅰ/Ⅱ/Ⅲ/Ⅳ corresponding to Ag, TiO2/SnS/P3HT:PCBM, FTO, Glass)

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