无机材料学报

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金刚石薄膜涂层硬质合金刀具的界面表征

匡同春; 刘正义; 代明江+; 周克崧+; 王德政+   

  1. 华南理工大学机电系, 广州 510641; +广州有色金属研究院; 广州 510651
  • 收稿日期:1997-09-01 修回日期:1997-11-05 出版日期:1998-10-20 网络出版日期:1998-10-20

Interfacial Characterization of Diamond Thin Film Coated Cemented Carbide Tool

KUANG Tong-Chun; LIU Zheng-Yi; DAI Ming-Jiang+; ZHOU Ke-Song+; WANG De-Zheng+   

  1. Department of Mechanical and Electric Engineering; South China University of TechnologyGuangzhou 510641 China; +Guangzhou Insititute of Non-Ferrous Metals Guangzhou 510651 China
  • Received:1997-09-01 Revised:1997-11-05 Published:1998-10-20 Online:1998-10-20

摘要: 采用SEM对金刚石薄膜涂层硬质合金刀具的金刚石薄膜表面、背面及金刚石薄膜剥落后的硬质合金刀片表面的典型形貌进行了观察,并采用TEM对金刚石薄膜/硬质合金刀片横截面的微观组织进行了研究,还采用FT—Raman光谱法对金刚石薄膜表面及金刚石薄膜剥落后的硬质合金刀片表面的微观结构进行了表征.结果表明:经适当的化学侵蚀脱钻和等离子体刻蚀脱碳预处理后,金刚石薄膜涂层硬质合金刀具的界面通常存在薄的(数十nm)石墨碳层;局部区域见到金刚石粒子直接生长在WC颗粒上,金刚石膜/基横截面的典型组织层次为:金刚石薄膜/薄的石墨碳层/细小的WC层/残留的脱碳层(η相+W相)/原始的硬质合金基体.

关键词: 金刚石薄膜, 硬质合金, 界面, 横截面形貌

Abstract: The surface and backside morpologies of diamond thin film as well as the surface morphology of the cobalt cemented tungsten carbide (YG8) insert after
deposited using D. C. plasma jet CVD method were observed by SEM. The cross-sectional morphology and microstructure of a CVD diamond thin film grown onto the cemented carbide insert were studied by means of TEM. Fourier transformated
laser Raman spectrometry was also used to characterize the structure compositions of the diamond thin film deposited and the cemented carbide insert
surface after diamond thin film delaminated. The results show that there exists a thin layer of graphite carbon (tens of nanometers) at the interface of a diamond thin film
coated cemented carbide insert. It has been seen, However, that diamond particles can be grown directly onto WC crystals at partial zones. Typical cross-sectional
morphology of a diamond thin film coated cemented carbide insert formed on the basis of pertreatment processes such as chemically cobalt-removed and plasmaetching
decarbonized treatments is as follows: diamond thin film; graphite carbon thin layer; small WC grains layer, retained decarbonized layer (W and η phases); YG8
cemented carbide substrate.

Key words: diamond thin film, cemented carbide, interface, cross-sectional morphology

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