无机材料学报

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Ti-DLC薄膜压阻性能及载流子输运行为研究

赵志翰1,2, 郭鹏2, 魏菁2, 崔丽2, 刘山泽1,2, 张文龙2, 陈仁德2, 汪爱英2,3   

  1. 1.宁波大学 材料科学与化学工程学院, 宁波 315211;
    2.中国科学院 宁波材料技术与工程研究所, 中国科学院海洋新材料与应用技术重点实验室, 浙江省海洋材料与防护技术重点实验室, 宁波 315201;
    3.中国科学院大学 材料与光电研究中心, 北京 100049
  • 收稿日期:2024-01-03 修回日期:2024-04-07 出版日期:2024-04-19 网络出版日期:2024-04-19
  • 作者简介:赵志翰(1998-), 男, 硕士研究生. E-mail: zhaozhihan@nimte.ac.cn.
  • 基金资助:
    宁波市科技创新2025重大专项(2020Z023); 国家自然科学基金(U20A20296, 52205237)

Research on Piezoresistive Properties and Carrier Transport Behavior of Ti Doped Amorphous Carbon Films

ZHAO Zhihan1,2, GUO Peng2, WEI Jing2, CUI Li2, LIU Shanze1,2, ZHANG Wenlong2, CHEN Rende2, WANG Aiying2,3   

  1. 1. School of Materials Science and Chemical Engineering, Ningbo University, Zhejiang Ningbo 315211, China;
    2. Zhejiang Key Laboratory of Marine Materials of Protective Technologies, Key Laboratory of Marine Materials and Related Technologies, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China;
    3. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
  • Received:2024-01-03 Revised:2024-04-07 Published:2024-04-19 Online:2024-04-19
  • About author:ZHAO Zhihan (1998-), male, Master candidate. E-mail: zhaozhihan@nimte.ac.cn
  • Supported by:
    Science and Technology 2025 Innovation Project of Ningbo (2020Z023); National Nature Science Foundation of China (U20A20296, 52205237)

摘要: 本工作围绕压阻传感器领域对高性能类金刚石(Diamind Like Carbon, DLC)薄膜压阻敏感材料的需求,针对金属掺杂DLC存在的载流子输运行为和实际多工况(如温度、湿度等)下压阻性能不明的问题,以Ti-C复合拼接靶为靶材,采用高功率脉冲磁控溅射技术,高通量制备出4种金属含量(原子分数)为0.43%~4.11%的Ti掺杂类金刚石(Ti-DLC)薄膜,研究了Ti含量对薄膜组分结构、电学性能、变湿度环境下压阻性能的影响规律。结果表明:在Ti含量为0.43%~4.11%范围内,掺杂Ti原子均以固溶形式均匀镶嵌于非晶碳网络中,Ti-DLC电学行为表现为典型半导体特性,在200~350 K温度范围内,薄膜电阻率均随温度升高而降低。具体载流子传导机制,在200~270 K为Mott型三维变程跳跃传导,在270~350 K则为热激活主导。Ti-DLC薄膜压阻系数(Gauge Factor, GF)最大值为95.1,在20%~80%湿度范围,所有样品GF均随湿度增加而增大,这可能是固溶Ti原子引入降低了导电相之间的平均距离,同时吸附表面水分子导致电阻变化。

关键词: Ti掺杂类金刚石薄膜, 电学性能, 变湿度, 压阻行为

Abstract: Diamond Like Carbon (DLC) thin film was a promising candidate for microelectromechanical system (MEMS) piezoresistive sensors owing to its excellent mechanical properties and sensitivity. The carrier transport behavior and the role of operating conditions (such as temperature, humidity, etc.) on piezoresistive performance of metal-containing DLC were not yet clear. In this work, Ti doped amorphous carbon (Ti-DLC) films with Ti content ranging from 0.43% to 4.11% were prepared using high-power pulse magnetron sputtering, where the high-throughput conception was introduced for film deposition. The effects of the doped Ti content on the microstructure, electrical behavior and piezoresistive properties of films were studied under various humidity environments. The results indicated that the doped Ti atoms were uniformly dissolved in the amorphous carbon matrix, accompanying the typical amorphous characteristics for the Ti-DLC films regardless of Ti content change from 0.43% to 4.11%. Furthermore, all the Ti-DLC films demonstrated the distinctly semiconductor feature, where the electrical resistivity was reduced with the increase of temperature range in 200-350 K. Particularly, the carrier transport was dominated by Mott type conduction with three-dimensional range hopping conduction from 200 K to 270 K, while the thermal activation transport acted as the conductive mechanism in temperature of 270-350 K. For the deposited Ti-DLC films, the highest piezoresistive coefficients (Gauge Factor, GF) was about 95.1, and the GF value increased with increasing humidity from 20% to 80%. This can be explained from the reduction of the average distance between the conductive cluster by the introduction of Ti atoms and a change in electrical resistance caused by the adsorption of water molecules.

Key words: Ti doped amorphous carbon, electrical properties, variable humidity, piezoresistive behavior

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