P-V-L键理论在微波介质陶瓷性能调控中的应用

doi:10.15541/jim20240450

无机材料学报 ›› 2025, Vol. 40 ›› Issue (6): 609-626.DOI: 10.15541/jim20240450

P-V-L键理论在微波介质陶瓷性能调控中的应用

胡智超¹(), 杨鸿宇²(), 杨鸿程³, 孙成礼¹, 杨俊⁴, 李恩竹¹()

1.电子科技大学电子薄膜与集成器件国家重点实验室, 成都 610054
2.西安电子科技大学先进材料与纳米科技学院, 西安 710071
3.西南石油大学新能源与材料学院, 成都 610500
4.中国振华集团云科电子有限公司, 贵阳 550018

收稿日期:2024-10-29 修回日期:2025-01-02 出版日期:2025-06-20 网络出版日期:2025-01-09
通讯作者: 杨鸿宇, 讲师. E-mail: yanghongyu@xidian.edu.cn;
李恩竹, 教授. E-mail: lienzhu@uestc.edu.cn
作者简介:胡智超(2000-), 男, 博士研究生. E-mail: 3256341968@qq.com
基金资助:
国家重点研发计划(2022YFB2807405);国家自然科学基金(U2341263);黔科合支撑([2022]一般056);黔科合支撑([2023]一般420)

Usage of the P-V-L Bond Theory in Regulating Properties of Microwave Dielectric Ceramics

HU Zhichao¹(), YANG Hongyu²(), YANG Hongcheng³, SUN Chengli¹, YANG Jun⁴, LI Enzhu¹()

1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
2. School of Advanced Materials and Nanotechnology, Xidian University, Xi’an 710071, China
3. School of New Energy and Materials, Southwest Petroleum University, Chengdu 610500, China
4. China Zhenhua Group Yunke Electronics Co., Ltd., Guiyang 550018, China

Received:2024-10-29 Revised:2025-01-02 Published:2025-06-20 Online:2025-01-09
Contact: YANG Hongyu, lecturer. E-mail: yanghongyu@xidian.edu.cn;
LI Enzhu, professor. E-mail: lienzhu@uestc.edu.cn
About author:HU Zhichao (2000-), male, PhD candidate. E-mail: 3256341968@qq.com
Supported by:
National Key Research and Development Program(2022YFB2807405);National Natural Science Foundation of China(U2341263);Guizhou Science and Technology Support Plan([2022] General 056);Guizhou Science and Technology Support Plan([2023] General 420)

摘要/Abstract

摘要：

目前通信技术的飞速发展对介质陶瓷滤波器提出了越来越严苛的要求, 如何高效设计新的介质材料以推动其发展意义重大。材料结构与性能之间的关系对于微波介质陶瓷的合成与设计至关重要。P-V-L键理论旨在通过计算提供晶体结构参数和基本化学键特征, 例如化学键的键离子性、键共价性、键敏感性、晶格能、键能等, 这些参数为微波介质陶瓷的改性设计提供了理论基础和指导。近年来, 研究人员致力于将P-V-L键理论运用到众多陶瓷体系中, 解释微波介质陶瓷结构与性能之间的关系, 并以此理论为基础提出新的改性策略, 从而获得优异的微波介电性能。本文详细介绍了P-V-L键理论的基本概念和复杂多晶的二元键合公式, 概述了该理论在微波介质陶瓷领域中针对化学键参数和化学键特征的计算方法, 同时分析了近年来P-V-L键理论在几类常见微波介质陶瓷体系中的应用。通过P-V-L键理论分析可以提供离子掺杂改性体系中的键特征、结构演变和介电性能, 这对于微波介质陶瓷的发展和应用具有重要意义。

关键词: 微波介质陶瓷, 晶体结构, P-V-L键理论, 应用, 综述

Abstract:

The rapid development of communication technology has put forward increasingly stringent requirements on dielectric ceramic filters. Efficient design of novel dielectric materials to facilitate their progression is of great significance. The relationship between structure and performance of materials is crucial for the synthesis and design of microwave dielectric ceramics. The P-V-L bond theory aims to provide crystal structure parameters and basic chemical bond characteristics through calculations, such as the bond ionicity, bond covalency, bond sensitivity, lattice energy, and bond energy. These parameters provide a theoretical basis and guidance for modification design of microwave dielectric ceramics. In recent years, researchers have been committed to applying the P-V-L bond theory to a large number of ceramic systems to explain the relationship between structure and performance of microwave dielectric ceramics. Based on this theory, new modification strategies have been proposed to obtain excellent microwave dielectric properties. This review provides a comprehensive overview of the fundamental concepts of the P-V-L bond theory and the binary bonding formula of complex polycrystals, and outlines the methods of calculating chemical bond parameters and chemical bond characteristics in the field of microwave dielectric ceramics. Meanwhile, the application of the P-V-L bond theory in several common microwave dielectric ceramic systems in recent years is analyzed. Data from literatures show that the P-V-L bond theory analysis can provide the bond characteristics in ion-doped modified systems, as well as the structural evolution and dielectric properties. This understanding is highly significant for guiding development and application direction of microwave dielectric ceramics.

Key words: microwave dielectric ceramic, crystal structure, P-V-L bond theory, application, review

中图分类号:

TQ174

胡智超, 杨鸿宇, 杨鸿程, 孙成礼, 杨俊, 李恩竹. P-V-L键理论在微波介质陶瓷性能调控中的应用[J]. 无机材料学报, 2025, 40(6): 609-626.

HU Zhichao, YANG Hongyu, YANG Hongcheng, SUN Chengli, YANG Jun, LI Enzhu. Usage of the P-V-L Bond Theory in Regulating Properties of Microwave Dielectric Ceramics[J]. Journal of Inorganic Materials, 2025, 40(6): 609-626.

图/表 14

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Formula	ε_r	Q×f/GHz	τ_f/(×10⁻⁶, ℃⁻¹)	ST^*/℃	Ref.
CaMgSi₂O₆	7.46	59638	-46	1290	[27]
CaCoSi₂O₆	6.04	12457	-18.91	1175	[26]
CaMgSi_1.95Ti_0.05O₆	7.94	80774	-58.56	1275	[36]
Sr₂MgSi₂O₇	8.3	55000	-47.5	1550	[4]
Sr₂MnSi₂O₇	8.8	32000	-58.5	1375
Ca₂ZnSi₂O₇	11.0	13500	-64.3	1300
Mg₂SiO₄	6.8	270000	-70	1500	[30]
(Mg_0.2Ni_0.2Zn_0.2Co_0.2Mn_0.2)₂SiO₄	8.02	28431	-38.2	1250	[31]
SrCu_0.95B_0.05(B²⁺: Cu, Co, Mn, Ni, Mg, Zn)Si₄O₁₀	5.8	65589	-50	1050	[35]

Formula	ε_r	Q×f/GHz	τ_f/(×10⁻⁶, ℃⁻¹)	ST^*/℃	Ref.
CaMgSi₂O₆	7.46	59638	-46	1290	[27]
CaCoSi₂O₆	6.04	12457	-18.91	1175	[26]
CaMgSi_1.95Ti_0.05O₆	7.94	80774	-58.56	1275	[36]
Sr₂MgSi₂O₇	8.3	55000	-47.5	1550	[4]
Sr₂MnSi₂O₇	8.8	32000	-58.5	1375
Ca₂ZnSi₂O₇	11.0	13500	-64.3	1300
Mg₂SiO₄	6.8	270000	-70	1500	[30]
(Mg_0.2Ni_0.2Zn_0.2Co_0.2Mn_0.2)₂SiO₄	8.02	28431	-38.2	1250	[31]
SrCu_0.95B_0.05(B²⁺: Cu, Co, Mn, Ni, Mg, Zn)Si₄O₁₀	5.8	65589	-50	1050	[35]

Formula	ε_r	Q×f/GHz	τ_f/(×10⁻⁶, ℃⁻¹)	ST/℃	Ref.
LiNiPO₄	11.49	10792	-2.8	900	[40]
LiLnPO₄(Ln=La, Sm, Eu)	5.04-5.26	41607-75968	-19.64--47.49	910-925	[41]
KSrPO₄	7.85	34527	-14.82	950	[44]
Ni₃(PO₄)₂	6.23	83430	-24.63	1200	[43]
BaZnP₂O₇	8.21	84760	-21.9	900	[45]

Formula	ε_r	Q×f/GHz	τ_f/(×10⁻⁶, ℃⁻¹)	ST/℃	Ref.
LiNiPO₄	11.49	10792	-2.8	900	[40]
LiLnPO₄(Ln=La, Sm, Eu)	5.04-5.26	41607-75968	-19.64--47.49	910-925	[41]
KSrPO₄	7.85	34527	-14.82	950	[44]
Ni₃(PO₄)₂	6.23	83430	-24.63	1200	[43]
BaZnP₂O₇	8.21	84760	-21.9	900	[45]

Formula	ε_r	Q×f/GHz	τ_f/(×10⁻⁶, ℃⁻¹)	ST/℃	Ref.
Li₃Mg₂NbO₆	15.3	109600	-17.3	1100	[70]
MgNb₂O₆	20.82	121580	-48.89	1460	[72]
ZnCu₂Nb₂O₈	18.56	47776	-16.3	920	[71]
ZnZrNb₂O₈−Cu	27.9	73200	-40	1175	[73]
Zn_0.5Ti_0.5NbO₄−Co	38.11	39720	-70	1150	[74]
Zn_0.5Ti_0.5NbO₄−Ta	37.86	43642	-72.69	1150	[6]
ZnTiNb₂O₈	41.52	50827	-2.59	1150	[6]
SmNbO₄	16.89-18.01	75200-97800	5.6-2.3	1150	[75]

P-V-L键理论在微波介质陶瓷性能调控中的应用

Usage of the P-V-L Bond Theory in Regulating Properties of Microwave Dielectric Ceramics

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Formula	ε_r	Q×f/GHz	τ_f/(×10⁻⁶, ℃⁻¹)	ST/℃	Ref.
NdTaO₄	18	13136	-21	1500	[83]
YbTaO₄	18.52	21928	1.25	1675	[79]
MgTa₂O₆	27.27	109203	53.38	1300	[81]
NiTa₂O₆	24.58	27610	33.94	1250	[81]
MgTa₂O₆−Mn	28	105000	19.5	1325	[84]
Mg₍₁₋_x₎Ni_xTa₂O₆	27	173000	35	1325	[85]
Ni_0.5Ti_0.5TaO₄	33.06	14600	95	1200−1300	[86]
Co_0.5Ti_0.5TaO₄	40.69	17291	114.54	1075	[87]
ZnZrTa₂O₈	23.14	140915	-26.42	1375	[88]

Formula	ε_r	Q×f/GHz	τ_f/ (×10⁻⁶, ℃⁻¹)	ST/℃	Ref.
SrTiO₄	39.41	93120	110.54	1475	[95]
Mg₂TiO₄	14.51	161570	-49.3	1480	[96]
ZnMgTiO₄	16.8	202021	-38	1400	[98]
Na₂Ti₆O₁₃	34.3	33660	10.03	1025	[110]
Li₂ZnTi₃O₈	25.92	109534	-8.21	1100	[101]
Li₅Mg₃Ti₂O₉F	14.8	98500	-15.6	925	[104]
Ca_0.61Nd_0.26TiO₃−Cr	99.3	16078	244.5	1400	[107]
Zn_0.15Nb_0.3Ti_0.55O₂	94.35	11889	353.43	1075	[109]

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