采用定向SiC纳米线烧结制备高强多孔SiC陶瓷

doi:10.15541/jim20200265

无机材料学报 ›› 2021, Vol. 36 ›› Issue (5): 547-551.DOI: 10.15541/jim20200265 CSTR: 32189.14.10.15541/jim20200265

采用定向SiC纳米线烧结制备高强多孔SiC陶瓷

祝泉¹^,²^,³(), 胡建宝¹^,²(), 杨金山¹^,², 周海军¹^,², 董绍明¹^,²

1.中国科学院高性能陶瓷和超微结构国家重点实验室, 上海 200050
2.中国科学院上海硅酸盐研究所, 结构陶瓷与复合材料工程研究中心, 上海 200050
3.中国科学院大学, 北京 100049

收稿日期:2020-05-15 修回日期:2020-06-09 出版日期:2021-05-20 网络出版日期:2021-04-19
通讯作者: 胡建宝, 副研究员. E-mail: hujianbao@mail.sic.ac.cn
作者简介:祝泉(1986-), 女, 博士研究生. E-mail:zhuquan03@126.com

Strong SiC Porous Ceramic Obtained by Sintering of Reticulated Aligned SiC Nanowires

ZHU Quan¹^,²^,³(), HU Jianbao¹^,²(), YANG Jinshan¹^,², ZHOU Haijun¹^,², DONG Shaoming¹^,²

1. State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
2. Structural Ceramics and Composites Engineering Research Center, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
3. University of Chinese Academy of Sciences, Beijing 100049, China

Received:2020-05-15 Revised:2020-06-09 Published:2021-05-20 Online:2021-04-19
Contact: HU Jianbao, associate professor. E-mail: hujianbao@mail.sic.ac.cn
About author:ZHU Quan(1986-), female, PhD candidate. E-mail:zhuquan03@126.com
Supported by:
Key Research Program of Frontier Science, Chinese Academy of Sciences(QYZDY-SSW-JSC031);Key Program of the Chinese Academy of Sciences(ZDRW-CN-2017-1);Key Program of the Chinese Academy of Sciences(ZDRW-CN-2019-01)

摘要/Abstract

摘要：

利用直接墨水打印方法制备了由定向SiC纳米线交错叠层组成的具备网络状孔隙结构的高强SiC多孔陶瓷。制备的碳化硅多孔陶瓷具有高的通孔结构和完全由定向SiC纳米线组装而成的结构特征。研究了烧结温度对定向SiC纳米线多孔陶瓷的微观结构、相组成演变及力学性能的影响。研究结果表明: 烧结温度低于1900 ℃时, SiC纳米线能保持高长径比; 1850 ℃烧结制备的定向SiCNWs多孔陶瓷的密度、气孔率和中位孔径分别为1.49 g/cm³、54.6%和~1 μm。得益于SiC纳米线的高强度以及取向排布, SiC纳米线多孔陶瓷的压缩强度高达(245.5±0.7) MPa。

关键词: 多孔陶瓷, SiC, 纳米线, 增材制造, 取向

Abstract:

High strength SiC porous ceramic with reticular pore structure is assembled by cross-lamination of layers comprised by aligned SiC nanowire (SiCNWs) struts printed through direct ink writing. SiCNWs networks exhibit a structure with highly interconnected porosity and an architecture formed by aligned SiCNWs struts. The effects of sintering temperature on the structures, phase evolutions and mechanical properties were studied. The high aspect ratio of SiCNWs was kept well at sintering temperature lower than 1900 ℃. The bulk density, porosity and median pore diameter of aligned SiCNWs porous ceramics sintered at 1850 ℃ were 1.49 g/cm³, 54.6% and ~1 μm, respectively. Due to the effect of orientation and high strength of SiC nanowire struts, compressive strength of (245.5±0.7) MPa is achieved.

Key words: porous ceramic, SiC, nanowire, additive manufacturing, orientation

中图分类号:

TQ174

祝泉, 胡建宝, 杨金山, 周海军, 董绍明. 采用定向SiC纳米线烧结制备高强多孔SiC陶瓷[J]. 无机材料学报, 2021, 36(5): 547-551.

ZHU Quan, HU Jianbao, YANG Jinshan, ZHOU Haijun, DONG Shaoming. Strong SiC Porous Ceramic Obtained by Sintering of Reticulated Aligned SiC Nanowires[J]. Journal of Inorganic Materials, 2021, 36(5): 547-551.

图/表 5

Fig. 1 Morphologies of samples with different magnifications (a, b) Before sintering, and sintered at (c, d) 1800 , (e, f) 1850 and (g, h) 1900 ℃. The insert in (a) is the appearance of printed SiCNWs scaffold

Fig. 2 Pore size distributions of SiC porous ceramics sintered at 1800 and 1850 ℃

Fig. 3 XRD patterns of SiC porous ceramics sintered at different temperatures (a) and SiCNWs treated at different temperatures (b)

Fig. 4 Compressive strength-strain curves of SiC porous ceramic sintered at different temperatures (a) and fracture modes of SiC porous ceramics sintered at 1800 (b), 1850 (c) and 1900 ℃ (d)

Fig. 5 Comparison of the compressive strength of SiCNW networks with other porous SiC ceramics Numbers in square brackets represent the serial number of refered documents

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采用定向SiC纳米线烧结制备高强多孔SiC陶瓷

Strong SiC Porous Ceramic Obtained by Sintering of Reticulated Aligned SiC Nanowires

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