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无机材料学报

无机材料学报 ›› 2013, Vol. 28 ›› Issue (8): 891-895.DOI: 10.3724/SP.J.1077.2013.12599 CSTR: 32189.14.SP.J.1077.2013.12599

• 研究论文 • 上一篇    下一篇

浮区法生长Lu2Si2O7:Ce晶体的缺陷、光学和闪烁性能研究

冯鹤1, 任国浩2, 丁栋舟2, 李焕英2, 徐军2, 杨秋红1, 徐家跃3   

  1. 1. 上海大学 材料科学与工程学院, 上海 200072; 
    2. 中国科学院 上海硅酸盐研究所, 上海 201800; 
    3. 上海应用技术学院材料科学与工程学院, 上海 201418
  • 收稿日期:2012-10-08 修回日期:2012-11-25 出版日期:2013-08-20 网络出版日期:2013-07-15
  • 基金资助:

    国家自然科学基金(51171239); 973项目(2011CB612310); 上海市重点基金(11JC1412400)

Defect Optical and Scintillation Properties of Lu2Si2O7:Ce Single Crystal Grown by Floating Zone Method

FENG He1, REN Guo-Hao2, DING Dong-Zhou2, LI Huan-Ying2, XU Jun2, YANG Qiu-Hong1, XU Jia-Yue3   

  1. 1. School of Materials Science and Engineering, Shanghai University, Shanghai 200072,China; 
    2. Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, China; 
    3. School of Material Science and Engineering, Shanghai Institute of Technology, Shanghai 201418, China
  • Received:2012-10-08 Revised:2012-11-25 Published:2013-08-20 Online:2013-07-15
  • Supported by:

    National Natural Science Foundation of China (51171239); 973 Program(2011CB612310); Shanghai Science Key Fund (11JC1412400)

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摘要： 通过浮区法制备得到LPS:0.5%Ce单晶样品, 并对其包裹体、开裂、闪烁和光学性能进行了研究,获得了晶体的电子探针谱、透过谱、77~500 K下的紫外激发发射谱、X射线激发发射谱和77~500 K下的衰减时间谱。研究发现晶体中存在解理开裂和热应力开裂, 同时存在两种类型的包裹体, 分别包含[Si3O9]6-、阴离子团和过量的SiO2。由于采用空气为生长气氛, 样品中部分Ce3+被氧化为Ce4+。浮区法LPS:0.5%Ce表现出较高的发光效率, 约为32000 ph/MeV。随着温度的升高, 样品的紫外激发发射谱逐渐向长波方向移动, 发射谱谱线随着温度的升高展宽, 导致自吸收的增加。衰减时间的温度转变点位于450 K, 表明LPS:Ce闪烁晶体适用于高温环境, 是一种性能优异的闪烁晶体。

关键词: Lu2Si2O7：Ce, 浮区法, 单晶, 缺陷, 闪烁性能

Abstract: Floating zone (Fz) method was employed to grow the Lu2Si2O7 (LPS):0.5%Ce single crystal. The crack, defect, optical and scintillation properties of LPS:Ce were studied. The electron probe microanalysis (EPMA), transmittance spectrum, X-ray excited luminescence (XEL) spectra, photoluminescence spectra and decay curves (from 77 K to 500 K) were recorded. The cleavage and thermal stress cracks are detected in the as-grown crystal. Two kinds of inclusions are found through the EPMA: one is [Si3O9]6- and  anion radicals and the other is the excess SiO2. Part of Ce3+ in the LPS:Ce sample was oxidized into Ce4+ in the air growth atmosphere. Fz grown LPS:0.5%Ce sample presents high luminescence efficiency, which is 32000 ph/MeV. As the temperature increases, the photoluminescence curves move towards the longer wavelength direction and broaden, leading to the increasing self-absorption. The rollover point of the decay time locates at 450 K, indicating that the LPS:Ce scintillator is a kind of high performance scintillator which can be applied in the high temperature environment.

Key words: Lu2Si2O7：Ce, floating zone method, single crystal, defects, scintillation properties

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