浮区法生长Lu2Si2O7:Ce晶体的缺陷、光学和闪烁性能研究

doi:10.3724/SP.J.1077.2013.12599

无机材料学报 ›› 2013, Vol. 28 ›› Issue (8): 891-895.DOI: 10.3724/SP.J.1077.2013.12599 CSTR: 32189.14.SP.J.1077.2013.12599

浮区法生长Lu₂Si₂O₇:Ce晶体的缺陷、光学和闪烁性能研究

冯鹤¹, 任国浩², 丁栋舟², 李焕英², 徐军², 杨秋红¹, 徐家跃³

1. 上海大学材料科学与工程学院, 上海 200072;
2. 中国科学院上海硅酸盐研究所, 上海 201800;
3. 上海应用技术学院材料科学与工程学院, 上海 201418

收稿日期:2012-10-08 修回日期:2012-11-25 出版日期:2013-08-20 网络出版日期:2013-07-15
基金资助:
国家自然科学基金(51171239); 973项目(2011CB612310); 上海市重点基金(11JC1412400)

Defect Optical and Scintillation Properties of Lu₂Si₂O₇:Ce Single Crystal Grown by Floating Zone Method

FENG He¹, REN Guo-Hao², DING Dong-Zhou², LI Huan-Ying², XU Jun², YANG Qiu-Hong¹, XU Jia-Yue³

1. School of Materials Science and Engineering, Shanghai University, Shanghai 200072,China;
2. Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, China;
3. School of Material Science and Engineering, Shanghai Institute of Technology, Shanghai 201418, China

Received:2012-10-08 Revised:2012-11-25 Published:2013-08-20 Online:2013-07-15
Supported by:
National Natural Science Foundation of China (51171239); 973 Program(2011CB612310); Shanghai Science Key Fund (11JC1412400)

摘要/Abstract

摘要： 通过浮区法制备得到LPS:0.5%Ce单晶样品, 并对其包裹体、开裂、闪烁和光学性能进行了研究,获得了晶体的电子探针谱、透过谱、77~500 K下的紫外激发发射谱、X射线激发发射谱和77~500 K下的衰减时间谱。研究发现晶体中存在解理开裂和热应力开裂, 同时存在两种类型的包裹体, 分别包含[Si₃O₉]^6-、阴离子团和过量的SiO₂。由于采用空气为生长气氛, 样品中部分Ce³⁺被氧化为Ce⁴⁺。浮区法LPS:0.5%Ce表现出较高的发光效率, 约为32000 ph/MeV。随着温度的升高, 样品的紫外激发发射谱逐渐向长波方向移动, 发射谱谱线随着温度的升高展宽, 导致自吸收的增加。衰减时间的温度转变点位于450 K, 表明LPS:Ce闪烁晶体适用于高温环境, 是一种性能优异的闪烁晶体。

关键词: Lu₂Si₂O₇：Ce, 浮区法, 单晶, 缺陷, 闪烁性能

Abstract: Floating zone (Fz) method was employed to grow the Lu₂Si₂O₇ (LPS):0.5%Ce single crystal. The crack, defect, optical and scintillation properties of LPS:Ce were studied. The electron probe microanalysis (EPMA), transmittance spectrum, X-ray excited luminescence (XEL) spectra, photoluminescence spectra and decay curves (from 77 K to 500 K) were recorded. The cleavage and thermal stress cracks are detected in the as-grown crystal. Two kinds of inclusions are found through the EPMA: one is [Si₃O₉]^6- and anion radicals and the other is the excess SiO₂. Part of Ce³⁺ in the LPS:Ce sample was oxidized into Ce⁴⁺ in the air growth atmosphere. Fz grown LPS:0.5%Ce sample presents high luminescence efficiency, which is 32000 ph/MeV. As the temperature increases, the photoluminescence curves move towards the longer wavelength direction and broaden, leading to the increasing self-absorption. The rollover point of the decay time locates at 450 K, indicating that the LPS:Ce scintillator is a kind of high performance scintillator which can be applied in the high temperature environment.

Key words: Lu₂Si₂O₇：Ce, floating zone method, single crystal, defects, scintillation properties

中图分类号:

O734

冯鹤, 任国浩, 丁栋舟, 李焕英, 徐军, 杨秋红, 徐家跃. 浮区法生长Lu₂Si₂O₇:Ce晶体的缺陷、光学和闪烁性能研究[J]. 无机材料学报, 2013, 28(8): 891-895.

FENG He, REN Guo-Hao, DING Dong-Zhou, LI Huan-Ying, XU Jun, YANG Qiu-Hong, XU Jia-Yue. Defect Optical and Scintillation Properties of Lu₂Si₂O₇:Ce Single Crystal Grown by Floating Zone Method[J]. Journal of Inorganic Materials, 2013, 28(8): 891-895.

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浮区法生长Lu₂Si₂O₇:Ce晶体的缺陷、光学和闪烁性能研究

Defect Optical and Scintillation Properties of Lu₂Si₂O₇:Ce Single Crystal Grown by Floating Zone Method

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