无机材料学报

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安赛蜜修饰SnO2电子传输层对钙钛矿太阳能电池性能的影响

胡清豪1, 刘兴翀1, 彭永珊1, 侯孟君1, 何堂贵2, 汤安民2   

  1. 1.西南石油大学 新能源与材料学院,成都 610500;
    2.眉山琏升光伏科技有限公司,眉山 620200
  • 收稿日期:2025-01-13 修回日期:2025-05-05
  • 通讯作者: 刘兴翀, 副教授. E-mail: liuxingchong@126.com
  • 作者简介:胡清豪(1998-), 女, 硕士研究生. E-mail: 2073147278@qq.com
  • 基金资助:
    四川省科技项目(2024ZDZX0030); 成都市科技项目(2024-JB00-00010-GX); 四川省产教融合示范项目(川财教[2022]106号)

Effect of Acesulfame Potassium Modified SnO2 Electron Transport Layer on Performance of Perovskite Solar Cells

HU Qinghao1, LIU Xingchong1, PENG Yongshan1, HOU Mengjun1, HE Tanggui2, TANG Anmin2   

  1. 1. Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China;
    2. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
  • Received:2025-01-13 Revised:2025-05-05
  • Contact: LIU Xingchong, associate professor. E-mail: liuxingchong@126.com
  • About author:HU Qinghao(1998-), female, Master candidate. E-mail: 2073147278@qq.com
  • Supported by:
    Science and Technology Program (2024ZDZX0030); Chengdu Science and Technology Program (2024-JB00-00010-GX); Sichuan Demonstration Project for the Integration of Industry and Education (Chuan Cai Jiao [2022] No. 106)

摘要: 作为钙钛矿太阳能电池(PSCs)的电子传输层(ETL)材料,二氧化锡表面及晶界处的氧空位缺陷会引发非辐射复合,从而限制器件效率的进一步提升。本研究提出了一种低成本、高效的安赛蜜(ACE-K)修饰ETL策略。研究结果表明,ACE-K分子中的C=O和S=O与SnO2表面未配位Sn4+相互作用,显著钝化了二氧化锡的氧空位缺陷,薄膜电导率由4.60×10⁻6 S cm⁻1提升至6.23×10⁻6 S cm⁻1。同时安赛蜜修饰改善了二氧化锡薄膜的粗糙度(20.6 nm降低至14.0 nm)和润湿性,为钙钛矿薄膜生长提供了更优质的基底。基于此ETL生长的钙钛矿薄膜晶粒尺寸从970.90 nm增大到1071.20 nm,且薄膜吸光能力得到增强。空间限制电流(SCLC)测试发现优化后薄膜缺陷密度从4.84×1016 cm-3降低至3.83×1016 cm-3,电化学阻抗(EIS)测试也证实载流子输运过程中的非辐射复合得到了明显抑制。最终PSCs光电转换效率(PCE)从19.27%提升至21.60%。此外,未封装的ACE-K修饰器件在氮气氛围下储存2160 h后,仍能保持初始效率的91.67%,展现出优异的长期稳定性。

关键词: 二氧化锡, 钙钛矿太阳能电池, 修饰改性, 缺陷钝化, 安赛蜜

Abstract: The oxygen vacancy defects at the surface and grain boundaries of tin dioxide (SnO2), an electron transport layer (ETL) material for perovskite solar cells (PSCs), can induce non-radiative recombination, thereby limiting further improvements in device efficiency. This study proposes a low-cost and efficient strategy for modifying the ETL using acesulfame potassium (ACE-K). The results demonstrate that the C=O and S=O groups in ACE-K molecules interact with the undercoordinated Sn4+ on the SnO2 surface, significantly passivating the oxygen vacancy defects in SnO₂. The electrical conductivity of the film increased from 4.60×10⁻6 S cm-1 to 6.23×10⁻6 S cm-1. Moreover, ACE-K modification improved the roughness (reduced from 20.6 nm to 14.0 nm) and wettability of the SnO2 film, providing a better substrate for perovskite film growth. Consequently, the perovskite films grown on this optimized ETL enlarged grain sizes from 970.90 nm to 1071.20 nm and enhanced light absorption capability. Space-charge-limited current (SCLC) measurements revealed that the defect density decreased from 4.84×1016 cm-3 to 3.83×1016 cm-3, while electrochemical impedance spectroscopy (EIS) confirmed a significant suppression of non-radiative recombination during charge carrier transport. Ultimately, the power conversion efficiency (PCE) of the PSCs improved from 19.27% to 21.60%. In addition, unpackaged ACE-K modified PSCs maintain 91.67% of initial PCE after 2160 h stored in N2, showing excellent long term stablility.

Key words: Tin dioxide, perovskite solar cells, modification, defect passivation, acesulfame potassium

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