石墨烯/Bi2O2Se/石墨烯双异质结器件的光探测和仿生突触研究

doi:10.15541/jim20250459

摘要/Abstract

摘要： 随着电子器件朝着微型化、集成化与多功能智能化发展,二维材料凭借其丰富的结构及独特的物理化学性质为该领域开辟了全新的发展路径。其中,Bi₂O₂Se因其适宜的带隙,高载流子迁移率及良好的环境稳定性而受到广泛关注。然而,目前Bi₂O₂Se基器件仍存在暗电流大、响应度低等问题,制约了其在高性能光电器件领域的进一步发展。本研究采用化学气相沉积工艺在云母衬底上可控地生长了高质量二维Bi₂O₂Se纳米片,并首次采用对称的石墨烯(Gr)作为接触电极构建了Gr/Bi₂O₂Se/Gr对称双异质结器件。该结构利用Gr与Bi₂O₂Se之间形成的双界面内建电场,优化了载流子的注入与分离过程。系统表征了该器件在黑暗及不同波长光照下的电流-电压特性、时间响应特性及光谱响应范围,并深入探究了器件在脉冲光刺激下的动态电学行为,模拟了生物突触的短期与长期可塑性功能。研究表明,在532 nm光照下,器件展现出良好的响应度(2.52 A/W)和探测率(3.39×10⁹ Jones),且在宽波长范围(365~1050 nm)内具有稳定的光响应,证明了其作为宽带光探测器的潜力。在365 nm脉冲刺激下,该器件展现出从短时程可塑性到长时程可塑性的转变,通过调节光脉冲的强度、频率和数量,精确模拟了兴奋性突触后电流、尖峰时序依赖可塑性在内的核心生物突触行为。此外,器件还成功复现了“经验学习”这一特征,充分证明了其在神经形态计算领域的潜力。

关键词: 二维材料, Bi₂O₂Se, 石墨烯, 光探测, 突触

Abstract: In the process of modern electronic devices developing towards miniaturization, integration, and multi-functional intelligence, two-dimensional (2D) materials offer a promising development path for this field with their diverse structures and unique physicochemical properties. Among numerous 2D materials, Bi₂O₂Se has attracted extensive attention due to its suitable bandgap, high carrier mobility, and excellent environmental stability. However, current Bi₂O₂Se-based devices still suffer from issues such as large dark current and low responsivity, which hinder their further development in the field of high-performance optoelectronic devices. In this study, high-quality 2D Bi₂O₂Se nanosheets were grown on mica substrates via chemical vapor deposition (CVD). Innovatively, symmetric graphene (Gr) electrodes were used to construct a Gr/Bi₂O₂Se/Gr bi-heterojunction device. This structure utilizes the built-in electric field formed at the dual interfaces between Gr and Bi₂O₂Se to optimize carrier injection and separation processes. Subsequently, the current-voltage characteristics, transient current responses, and spectral responsivity of the device under dark and illumination were systematically characterized at different wavelengths. Especially, the dynamic electrical behavior of the device under pulsed light stimulation was thoroughly investigated to mimic short-term and long-term synaptic plasticity functions. Under 532 nm light illumination, the device exhibits a favorable responsivity of 2.52 A/W and a detectivity of 3.39×10⁹ Jones, and maintains stable photoresponse across a wide wavelength range (365-1050 nm), confirming its potential as a broadband photodetector. Especially under 365 nm pulsed stimulation, the device demonstrates the transition from short-term plasticity to long-term plasticity. By adjusting the intensity, frequency, and number of light pulses, key biological synaptic behaviors, including excitatory postsynaptic currents and spike-timing-dependent plasticity, were accurately simulated. Furthermore, the device successfully reproduces the feature of “empirical learning”, fully demonstrating its potential in the field of neuromorphic computing.

Key words: two-dimensional materials, Bi₂O₂Se, graphene, photonic-detection, bionic-synapse

中图分类号:

TB383

孙丽, 徐永善, 高义华. 石墨烯/Bi₂O₂Se/石墨烯双异质结器件的光探测和仿生突触研究[J]. 无机材料学报, DOI: 10.15541/jim20250459.

SUN Li, XU Yongshan, GAO Yihua. Study on Photonic-Detection and Bionic-synapse of Gr/Bi₂O₂Se/Gr Bi-heterojunction Device[J]. Journal of Inorganic Materials, DOI: 10.15541/jim20250459.

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石墨烯/Bi₂O₂Se/石墨烯双异质结器件的光探测和仿生突触研究

Study on Photonic-Detection and Bionic-synapse of Gr/Bi₂O₂Se/Gr Bi-heterojunction Device

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