石墨烯/Bi2O2Se/石墨烯双异质结器件的光探测和仿生突触研究

doi:10.15541/jim20250459

无机材料学报 ›› 2026, Vol. 41 ›› Issue (6): 795-804.DOI: 10.15541/jim20250459

石墨烯/Bi₂O₂Se/石墨烯双异质结器件的光探测和仿生突触研究

孙丽¹(), 徐永善², 高义华¹()

¹ 华中科技大学物理学院 & 武汉光电国家研究中心, 武汉 430074
² 华中科技大学材料科学与工程学院, 材料成形与模具技术全国重点实验室, 武汉 430074

收稿日期:2025-11-18 修回日期:2025-12-31 出版日期:2026-06-20 网络出版日期:2026-01-22
通讯作者: 高义华, 教授. E-mail: gaoyihua@hust.edu.cn
作者简介:孙丽(1994-), 女, 博士. E-mail: Sunl_qdu@163.com
基金资助:
国家自然科学基金(11874025);国家自然科学基金(12274151)

Photonic-detection and Bionic-synapse of Graphene/Bi₂O₂Se/Graphene Bi-heterojunction Device

SUN Li¹(), XU Yongshan², GAO Yihua¹()

¹ School of Physics & Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China
² State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China

Received:2025-11-18 Revised:2025-12-31 Published:2026-06-20 Online:2026-01-22
Contact: GAO Yihua, professor. E-mail: gaoyihua@hust.edu.cn
About author:SUN Li (1994-), female, PhD. E-mail: Sunl_qdu@163.com
Supported by:
National Natural Science Foundation of China(11874025);National Natural Science Foundation of China(12274151)

摘要/Abstract

摘要：

随着电子器件朝着微型化、集成化与多功能智能化方向发展, 二维材料凭借其丰富的结构及独特的物理化学性质为该领域开辟了全新的发展路径。其中, Bi₂O₂Se因其适宜的带隙、高载流子迁移率及良好的环境稳定性而受到广泛关注。然而, 目前Bi₂O₂Se基器件仍存在暗电流大、响应度低等问题, 制约了其在高性能光电器件领域的进一步发展。本研究采用化学气相沉积工艺在云母衬底上可控生长了高质量二维Bi₂O₂Se纳米片, 并首次采用对称石墨烯(Gr)作为接触电极构建了Gr/Bi₂O₂Se/Gr对称双异质结器件。该结构利用Gr与Bi₂O₂Se之间形成的双界面内建电场, 优化了载流子的注入与分离过程。系统表征了该器件在黑暗及不同波长光照下的电流-电压特性、时间响应特性及光谱响应范围, 并深入探究了器件在脉冲光刺激下的动态电学行为, 模拟了生物突触的短期与长期可塑性功能。研究表明, 在532 nm光照下, 器件展现出良好的响应度(2.52 A/W)和探测率(3.39×10⁹ Jones), 且在宽波长范围(365~1050 nm)内具有稳定的光响应, 证明了其作为宽带光探测器的潜力。在365 nm脉冲刺激下, 该器件展现出从短时程可塑性到长时程可塑性的转变, 通过调节光脉冲的强度、频率和数量, 精确模拟了包括兴奋性突触后电流、尖峰时序依赖可塑性在内的核心生物突触行为。此外, 该器件还成功复现了“经验学习”这一特征, 充分证明了其在神经形态计算领域的潜力。

关键词: 二维材料, Bi₂O₂Se, 石墨烯, 光探测, 仿生突触

Abstract:

In the process of modern electronic devices developing towards miniaturization, integration, and multi-functional intelligence, two-dimensional (2D) materials offer a promising development path for this field with their diverse structures and unique physicochemical properties. Among numerous 2D materials, Bi₂O₂Se has attracted extensive attention due to its suitable bandgap, high carrier mobility, and excellent environmental stability. However, current Bi₂O₂Se-based devices still suffer from issues such as large dark current and low responsivity, which hinder their further development in the field of high-performance optoelectronic devices. In this study, high-quality 2D Bi₂O₂Se nanosheets were grown on mica substrates via chemical vapor deposition. Innovatively, symmetric graphene (Gr) electrodes were used to construct a Gr/Bi₂O₂Se/Gr bi-heterojunction device. This structure utilizes the built-in electric field formed at the dual interfaces between Gr and Bi₂O₂Se to optimize carrier injection and separation processes. Subsequently, the current-voltage characteristics, transient current responses, and spectral responsivity of the device under dark and illumination were systematically characterized at different wavelengths. Especially, the dynamic electrical behavior of the device under pulsed light stimulation was thoroughly investigated to mimic short-term and long-term synaptic plasticity functions. Under 532 nm light illumination, the device exhibits a favorable responsivity of 2.52 A/W and a detectivity of 3.39×10⁹ Jones, and maintains stable photoresponse across a wide wavelength range (365-1050 nm), confirming its potential as a broadband photodetector. Especially under 365 nm pulsed stimulation, the device demonstrates the transition from short-term plasticity to long-term plasticity. By adjusting the intensity, frequency, and number of light pulses, key biological synaptic behaviors, including excitatory postsynaptic currents and spike-timing-dependent plasticity, were accurately simulated. Furthermore, the device successfully reproduces the feature of “empirical learning”, fully demonstrating its potential in the field of neuromorphic computing.

Key words: two-dimensional material, Bi₂O₂Se, graphene, photonic detection, bionic synapse

中图分类号:

TB383

孙丽, 徐永善, 高义华. 石墨烯/Bi₂O₂Se/石墨烯双异质结器件的光探测和仿生突触研究[J]. 无机材料学报, 2026, 41(6): 795-804.

SUN Li, XU Yongshan, GAO Yihua. Photonic-detection and Bionic-synapse of Graphene/Bi₂O₂Se/Graphene Bi-heterojunction Device[J]. Journal of Inorganic Materials, 2026, 41(6): 795-804.

图/表 8

图1 Gr/Bi2O2Se/Gr双异质结器件的结构与表征

Fig. 1 Characterization of Gr/Bi2O2Se/Gr bi-heterostructure device (a) Schematic diagram of device fabrication; (b) Schematic diagram of the structure; (c) Optical microscope image; (d) AFM image and edge height profile; (e) Raman spectra; (f, g) Raman mapping images of (f) Bi2O2Se and (g) graphene

图2 Gr/Bi2O2Se/Gr双异质结器件的性能

Fig. 2 Performance of Gr/Bi2O2Se/Gr bi-heterojunction device (a) Output characteristic curves; (b) Transfer characteristic curves; (c) Photocurrent versus light power density curves; (d) Relationship curve between photocurrent and power density; (e) Responsivity and detectivity; (f) Transient current responses under different illumination wavelengths; (g) Schematic diagrams of the energy bands. Colorful figures are available on website

图3 不同光功率密度下的光电流瞬态响应曲线及拟合曲线

Fig. 3 Light current transient response curves and fitting curves under different light power densities Colorful figures are available on website

图4 Gr/Bi2O2Se/Gr双异质结器件的光调控突触特性

Fig. 4 Light-regulated synaptic performance of Gr/Bi2O2Se/Gr bi-heterojunction device (a) Schematic diagram of a biological synapse; (b) Schematic diagram of the device working principle; (c) EPSC response of the device under one light pulse; (d) Light intensity dependent EPSC response; (e) EPSC responses under different light pulse durations

图5 Gr/Bi2O2Se/Gr双异质结器件的突触可塑性

Fig. 5 Synaptic plasticity of Gr/Bi2O2Se/Gr bi-heterojunction device (a) EPSC responses of the device under different light pulse frequencies; (b) Transition from short-term plasticity to long-term plasticity with the increase of light pulse number; (c) Photocurrent decay characteristics; (d) Relationship between paired-pulse facilitation (PPF) index and inter-pulse interval (Δt), with inset showing the excitatory postsynaptic current triggered by a pair of light pulses with a duration of 0.5 s and an interval of 0.2 s; (e) “Learning-forgetting-relearning” behavior of the device

图6 Gr/Bi2O2Se/Gr器件在(a) 25次光脉冲和(b) 128次光脉冲后的保持性能

Fig. 6 Retention behavior of Gr/Bi2O2Se/Gr device after (a) 25 and (b) 128 light pulses

图7 Gr/Bi2O2Se/Gr双异质结器件的PPF行为模拟

Fig. 7 Stimulated PPF behavior of Gr/Bi2O2Se/Gr bi-heterojunction device A pair of light stimuli with a duration of 0.50 s and inter-pulse intervals of (a) 0.05, (b) 0.10, (c) 0.50, (d) 0.80, (e) 1.00, (f) 2.00, (g) 5.00, (h) 8.00 and (i) 10.00 s

表1 Gr/Bi2O2Se/Gr器件与已报道光突触的性能参数对比

Table 1 Properties comparison between the Gr/Bi2O2Se/Gr device and other reported synapse

Device	Voltage/V	Wavelength/nm	EPSC/nA	PPF/%	Ref.
MoS₂/h-BN/α-In₂Se₃	1	405	0.3	240	[42]
MoS₂/SnSe₂	1	400	0.3	1.25	[43]
Bi₂O₂Se-V_se	0	532	0.3	133	[44]
c-PtTe₂/PtSe₂	1	625	15	1.25	[45]
Te/SnS₂	2	532	0.1	187	[46]
p-WSe₂/n-Ta₂NiS₅	-1	1064	0.01	23	[47]
Ph-BTBT-10 2DMC	-1	365	0.15	248	[48]
Gr/Bi₂O₂Se/Gr	0.01	365	6.91	142.1	This work

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石墨烯/Bi₂O₂Se/石墨烯双异质结器件的光探测和仿生突触研究

Photonic-detection and Bionic-synapse of Graphene/Bi₂O₂Se/Graphene Bi-heterojunction Device

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