Journal of Inorganic Materials ›› 2020, Vol. 35 ›› Issue (8): 916-922.DOI: 10.15541/jim20190641

Special Issue: 能源材料论文精选(三):热电与燃料电池

• RESEARCH PAPER • Previous Articles     Next Articles

Influence of Ge1-xInxTe Microstructure on Thermoelectric Properties

QIU Xiaoxiao1(),ZHOU Xiying1(),FU Yuntian2,SUN Xiaomeng2,WANG Lianjun3(),JIANG Wan2   

  1. 1. School of Materials Engineering, Shanghai University of Engineering and Science, Shanghai 201620, China
    2. State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai 201620, China
    3. Engineering Research Center of Advanced Glasses Manufacturing Technology, Ministry of Education, Donghua University, Shanghai 201620, China
  • Received:2019-12-18 Revised:2020-01-10 Published:2020-08-20 Online:2020-03-06
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  • Supported by:
    National Natural Science Foundation of China(51774096);National Natural Science Foundation of China(51871053);Basic Research Project of Science and Technology Innovation Action Plan of Shanghai Science and Technology Commission(18JC1411200)


The resonant levels can be introduced into GeTe by In element, however, the effect of its microstructure on thermoelectric properties still remained unclear. In this study, a series of Ge1-xInxTe samples were prepared by smelting-quenching-annealing combined with spark plasma sintering (SPS). The XRD, SEM, laser thermal conductivity instrument and thermoelectric performance analysis system (ZEM-3) were applied to study the microstructure and thermoelectric properties. Results show that, with the incorporation of In content, the unit cell volume decreases, and Herringbone structure has become smaller and grain boundaries increase, which result in a decrease in the lattice thermal conductivity. Thereby, a minimum thermal conductivity of 2.16 W·m -1·K -1 is obtained. Meanwhile, In doping introduces the resonant levels and decreases the carrier concentration, so the Seebeck coefficient and the power factor increase. Consequently, the maximum ZT value of 1.15 is obtained in the 0.03 sample at 600 K, which is 26.4% higher than that of GeTe. This indicates that the thermoelectric properties of Ge1-xInxTe can be effectively improved by the microstructure regulation.

Key words: In doping, thermal conductivity, GeTe, thermoelectric materials

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