Thermoelectric Property of In2O3/InNbO4 Composites

doi:10.15541/jim20210631

Abstract

Abstract:

As being a good photoelectric and gas sensitive material, In₂O₃ is of great interest to the thermoelectric community due to its excellent thermoelectric properties at high temperature. In this study, the second phase InNbO₄ was successfully induced into the In₂O₃ matrix in situ by solid-state reaction combined with spark plasma sintering (SPS) to optimize the preparation process of bulk samples. It is found that introducing InNbO₄ distinctly affects the electrical transport properties of the In₂O₃/InNbO₄ composite samples, and its carrier concentration is dramatically increased. The highest electrical conductivity is 1548 S·cm^-1 at 1023 K, which is higher than those of most element-doped samples. The power factor of 0.67 mW·m^-1·K^-2 and the highest ZT value of 0.187 are achieved for the 0.998In₂O₃/0.002InNbO₄ sample at 1023 K. In conclusion, the electrical properties of In₂O₃ ceramics can be effectively improved by introducing in-situ InNbO₄ second phase, and thus the thermoelectric property at high temperatures is further regulated.

Key words: thermoelectric materials, In₂O₃, InNbO₄, thermoelectric property at high temperature

CLC Number:

O472

CHENG Cheng, LI Jianbo, TIAN Zhen, WANG Pengjiang, KANG Huijun, WANG Tongmin. Thermoelectric Property of In₂O₃/InNbO₄ Composites[J]. Journal of Inorganic Materials, 2022, 37(7): 724-730.

Figures/Tables 9

Fig. 1 XRD patterns for (1-x)In2O3/xInNbO4 samples

Fig. 2 Matrix structure and composition of 0.998In2O3/ 0.002InNbO4

Fig. 3 SEM images of (a) pure In2O3 powder, fracture surface for (1-x)In2O3/xInNbO4 (x=(b) 0, (c) 0.04), surface SEM images for (1-x)In2O3/xInNbO4 (x=0.002 (d), x=0.02 (e), x=0.04 (f)); (g-h) elemental distributions of Nb at high magnification for 0.96In2O3/0.04InNbO4

Table 1 Measured densities(ρm), theoretical densities(ρth), relative densities (ρr), carrier concentrations (n) and carrier mobilities (μ) of (1-x)In2O3/xInNbO4 samples at room temperature

(1-x)In₂O₃/xInNbO₄	ρ_m/(g·cm^-3)	ρ_th/(g·cm^-3)	ρ_r/%	n/(×10¹⁹, cm^-3)	μ/(cm²·V^-1·s^-1)
x=0	6.969	7.120	97.9	0.46	94.26
x=0.002	7.016	7.119	98.6	0.78	76.22
x=0.006	6.811	7.117	95.7	5.90	38.21
x=0.01	6.658	7.116	93.6	9.80	38.43
x=0.02	6.598	7.112	92.8	20.88	40.22
x=0.04	6.547	7.100	92.2	45.24	39.86

Fig. 4 (a) XPS total survey and high-resolution XPS spectra of (b) Nb3d, (c) In3d and (d) O1s core-level regions for 0.96In2O3/0.04InNbO4 sample

Fig. 5 Temperature dependence of electrical carrier concentrations and mobilities of (1-x)In2O3/xInNbO4(x=0, 0.002)

Fig. 6 Temperature dependence of (a) electrical conductivities, (b) Seebeck coefficients and (c) power factors of (1-x)In2O3/xInNbO4, In1.76(Zn0.12Ge0.12)O3[33] and In1.88V0.12O3[34]

Fig. 7 Temperature dependence of (a) total thermal conductivity, (b) electronic thermal conductivity and (c) lattice thermal conductivity of (1-x)In2O3/xInNbO4, In1.76(Zn0.12Ge0.12)O3[33] and In1.88V0.12O3[34]

Fig. 8 Temperature dependence of ZT for (1-x)In2O3/xInNbO4, In1.76(Zn0.12Ge0.12)O3[33] and In1.88V0.12O3[34]

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Thermoelectric Property of In₂O₃/InNbO₄ Composites

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