New Development of Long Afterglow Phosphorescent Materials

Abstract

Abstract: The most recent progress of long afterglow phosphorescent materials on new material design, new application and luminescence mechanism were reviewed.
The development of red and blue materials, the key factor to obtain long afterglow-structure defects and the effect of doped rare earth ions were
introduced. For promoting new material research, the progress of mechanism research was emphasized. Besides carrier transport and tunneling
effect models, two new models-two photons absorption and V_K center were introduced. Long afterglow materials are widely used to illuminate and
display in weak light environment and their application is being expanded to optoelectronic material area, especially as two dimensions of image storage and
detector of high energy ray.

Key words: long afterglow, defect, luminescence

CLC Number:

O482

SHI Chao-Shu,QI Ze-Ming. New Development of Long Afterglow Phosphorescent Materials[J]. Journal of Inorganic Materials.

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