Defect-induced Analogue Resistive Switching Behavior in FeOx-based Memristor and Synaptic Paired-pulse Facilitation Feature

doi:10.15541/jim20220721

Abstract

Abstract:

A memristor with analogue resistive switching (RS) memory behaviors could provide enough conductance states for high-efficiency neuromorphic computing because this type RS memory feature can avoid conductance clamping, steeply change, and computing invalidation. Simulating the behavior of biological synapses under stimulus pulse can better reveal the bionic characteristic mechanism of electronic devices and provide support for high performance neuromorphic computation. Synaptic paired-pulse facilitation (PPF) is an important characteristic of biological synapses, reflecting the facilitation and adaptation process under external stimuli, which is crucial to reveal the working mechanism of neurons. A memristor with the structure of the Ag/FeO_x/ITO was prepared by RF magnetron sputtering, which was designed by energy band engineering for the PPF demonstration. Experimental measurement of the electric properties illustrates that the developed memristor displays an excellent asymptotic nonlinear resistance switching behaviors, which is so called analogue RS memory behavior. Importantly, this developed memristor presents this analogue RS memory behavior during 3000 I-V sweepings, provides dissociable 16 conductance states that could be well maintained for 10⁴s, illustrating that these available conductance states are nonvolatile. Based on the energy band structure and oxygen vacancy (V_O) defects, a physical mechanism, which involved trap sites softly filled by the injection electron, electron tunneling between the potential barrier built by the contact of Ag/FeO_x and FeO_x/ITO, and the V_O migration that accompanied a volatile feature to some extent, is proposed to comprehend the observed analogue RS memory behaviors. According to this mechanism, a typical PPF feature is obtained after modulating the voltage pulse width and amplitude. The observed analogue RS memory behaviors and PPF behaviors show a promising potential and advantage in neuromorphic computing.

Key words: memristor, iron oxide, defect state, synaptic double pulse facilitation

CLC Number:

TQ714

WANG Tongyu, RAN Haofeng, ZHOU Guangdong. Defect-induced Analogue Resistive Switching Behavior in FeO_x-based Memristor and Synaptic Paired-pulse Facilitation Feature[J]. Journal of Inorganic Materials, 2023, 38(4): 437-444.

Figures/Tables 5

Fig. 1 Structure and characterization of Ag/FeOx/ITO memristors (a) Schematic diagram of structure of Ag/FeOx/ITO memristors and corresponding SEM section; (b) XRD patterns of FeOx resistance functional layer; (c) XPS spectra of the core-level of the Fe2p; (d) XPS spectra of the core-level of the O1s

Fig. 2 Results of memristor characteristics of Ag/FeOx/ITO memristors FeOx memristors with different thicknesses of functional layerobtained by changing FeOx growth parameters; (a) Memristor characteristic curves of Ag/FeOx/ITO memristor grown at 100 W/1 h and 80 W/35 min; (b) I-V curve of Ag/FeOx/ITO memristor grown at 100 W/2 h; (c, d) Analog resistance characteristic curve phenomena of memristor in the negative voltage region (c) and positive voltage region (d); (e) I-V curves of 100 different devices under the same conditions; (f) Regulation of voltage sweep rate on analog resistive characteristics; (g) Regulation of analog resistance characteristics by different sweep voltage amplitudes; (h) Current-to-time (I-t) curves of the device in different conductive states at the read voltage of 0.2 V; Colorful figures are available on website

Fig. 3 Multiconductivity testing and biological synaptic simulation (a) Multi-current levels after operating the Ag/FeOx/ITO memristor to different conductance states under a reading voltage of 0.2 V with precision exceeding 4 bits for the FeOx-based memristor; (b) PPF pulse test schematic; (c) PPF pulse test results; (d) PPF versus interval of Ag/FeOx/ITO memristor

Fig. 4 Results of fitting the physical mechanism of Ag/FeOx/ITO memristors (a) Using the Fowler-Nordheim tunneling mechanism; (b) Using the Schottky emission tunneling mechanism; (c) Using the Ohmic current mechanism; (d) Using the Frenkel-Poole tunneling mechanism

Fig. 5 Physical model constructed based on trap energy level tunneling (a) Electrons are injected from Ag electrode and filled with defect energy levels in FeOx; (b) Defect energy level in FeOx is filled and the device is converted to LRS; (c) Reverse voltage, electrons are injected from the ITO electrode and filled with defect energy levels; (d) Defect energy level is filled and the device transitions to LRS again

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