Sintering Behavior, Microstructure and Transport Properties of Bi2V0.9Cu0.1-x SnxO 5.5-δ Oxygen-ion Conductor

doi:10.3724/SP.J.1077.2006.01423

Abstract

Abstract: The samples of Bi ₂ V _0.9 Cu_0.1-x Sn _xO_5.5-δ (0≤ x ≤0.75) were prepared by solid-state reaction. Room temperature powder X-ray diffraction (XRD) indicates that the synthesized compounds present the tetragonal γ-phase structure. The measurement results show that doped-Sn benefits to the control of microstructure of the sample and favor its mechanic property though it doesn’t further improve the electrical conductivity of the system. The oxygen permeation measurement result indicates oxygen transport in Bi ₂V _0.9 Cu _0.1-x Sn _xO_5.5-δ system is controlled mainly by the process of surface oxygen exchange.

Key words: Bi2V0.9Cu0.1-xSnxO5.5-δ, electrical conductivity, microstructure, oxygen permeation

CLC Number:

TQ174

WU Xiu-Sheng,FANG Shu-Min,JIANG Guo-Shun,CHEN Chu-Sheng,LIU Wei. Sintering Behavior, Microstructure and Transport Properties of Bi₂V_0.9Cu_0.1-x Sn_xO _5.5-δ Oxygen-ion Conductor[J]. Journal of Inorganic Materials, DOI: 10.3724/SP.J.1077.2006.01423.

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Sintering Behavior, Microstructure and Transport Properties of Bi₂V_0.9Cu_0.1-x Sn_xO _5.5-δ Oxygen-ion Conductor

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