2D MXenes Based Flexible Photodetectors: Progress and Prospects

doi:10.15541/jim20230327

Abstract

Abstract:

Two-dimensional (2D) transition metal carbides/nitrides (MXenes), since their discovery in 2011, have attracted great attention in the fields of energy storage, catalysis, sensors, electromagnetic interference shielding and microwave absorption and so on, owing to their special 2D layered structure, excellent electrical conductivity and electrochemical properties. In recent years, with the deep understanding of MXenes, the research on the realm related to optoelectronic properties has been widely concerned. Unlike other application fields, optoelectronic devices based on MXenes focus on extending semiconductor properties, including tunable band gap of the MXenes via design of the surface functional groups and layer control, etc., so as to achieve their transformation from metal to semiconductor properties. This paper revolves around the photoelectric properties of MXenes, mainly introduce its application in flexible optoelectronic devices, and systematically describe their current status and trend in transparent electronic devices, photodetectors, image sensors, transistors, and artificial neural vision network systems. The challenges and future development prospects of MXenes-based flexible optoelectronic devices are also proposed.

Key words: MXene, flexible electronics, transparent electronics, photodetector, tunable band gap, perspective

CLC Number:

TB383

LI La, SHEN Guozhen. 2D MXenes Based Flexible Photodetectors: Progress and Prospects[J]. Journal of Inorganic Materials, 2024, 39(2): 186-194.

Figures/Tables 7

Fig. 1 Application of MXenes in flexible optical electronic devices[32⇓⇓-35] Including transparent device, photodetector, image sensor array, transistor, and artificial neural network

Fig. 2 MXene based heterojunction materials for photodetector devices[32] (a-c) Inorganic-inorganic (MXene-Si) heterostructure; (d-f) Inorganic-organic (MXene-RNA) heterojunction

Fig. 3 Pure MXene based photodetector devices[44] (a) Synthesis process of Ti3C2Tx-C12H26; (b) Schematic diagram of the Ti3C2Tx-C12H26 based photodetector; (c) I-V curves of the fabricated devices; (d) Responsivity and specific detectivity of the photodetector

Fig. 4 MXene based 1024-pixel image sensor[34] (a) Optical photograph of Ti3C2Tx-RAN image sensor array; (b) Schematic diagram of multipixel image sensor imaging; (c) Deer pattern composed of 1024-pixel output by Ti3C2Tx-RAN photodetectors

Fig. 5 MXene based photoelectric transistors[51] (a) Schematic process for MXene based photoelectric transistors; (b) Transfer curves of the MXene based photoelectric transistors under dark and different wavelength incident light; (c) UV response cycle test

Fig. 6 MXene based transparent photodetector[35] (a) Schematic of synthesis process of leaf-based MXene electrodes; (b) Optical photograph of the leaf-based MXene electrodes under deformations; (c) Transmittance of the leaf-based MXene photodetector; (d) I-V curves and (e) responsivity of the MXene photodetector

Fig. 7 Pure MXene based flexible artificial neural network[33] (a) Schematic diagram of human visual recognition system; (b) Schematic diagram of artificial neural network using image sensor array for image recognition; (c) Comparison of recognition rates of two kinds of artificial neural vision network; (d) Recognition probability maps of three letters; (e) The resulted recognition probability diagram

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