Photovoltaic Performance of Sb2(S,Se)3 Film Enhanced by Addition of Formamidinesulfinic Acid

doi:10.15541/jim20240319

Abstract

Abstract:

In recent years, Sb₂(S,Se)₃ has been considered a promising photovoltaic material due to its excellent photovoltaic properties. However, the highest reported photoelectric conversion efficiency (PCE) of Sb₂(S,Se)₃ solar cells still lags far behind its theoretical PCE limit, partly due to severe carrier recombination in Sb₂(S,Se)₃ films. In this study, a process additive, formamidinesulfinic acid (FSA), was introduced into the precursor solution of Sb₂(S,Se)₃ by hydrothermal deposition method. The additive FSA not only optimizes (211) and (221) orientations as well as Se/S atomic ratio of Sb₂(S,Se)₃ films, but also reduces Sb₂O₃ content of carrier recombination center in the films. The dark saturation current density (J₀) and recombination resistance (R_rec) values of the solar cell with FSA are 1.10×10⁻⁵ mA·cm⁻² and 3147 Ω·cm⁻², respectively, which are significantly better than those of reference device (5.17×10⁻⁵ mA·cm⁻² and 974.3 Ω·cm⁻²), indicating that the carrier recombination loss of Sb₂(S,Se)₃ solar cell is restricted. Under AM 1.5G, the mean values of open circuit voltage (V_OC), short circuit current density (J_SC), fill factor (FF), and PCE for the solar cell with FSA are 0.69 V, 18.46 mA·cm⁻², 63.60%, and 8.04%, respectively, showing significant improvement compared to reference device (0.67 V, 17.82 mA cm⁻², 62.27%, and 7.70%). The best device contributes the highest PCE of 8.21%, and this unpackaged device maintains 82.1% of its initial efficiency after a 120 d aging test in air.

Key words: Sb₂(S,Se)₃, additive, formamidinesulfinic acid, carrier recombination, solar cell

CLC Number:

TQ174

NI Xiaomeng, XU Fangxian, LIU Jingjing, ZHANG Shuai, GUO Huafei, YUAN Ningyi. Photovoltaic Performance of Sb₂(S,Se)₃ Film Enhanced by Addition of Formamidinesulfinic Acid[J]. Journal of Inorganic Materials, 2025, 40(4): 372-378.

Figures/Tables 12

Fig. 1 Crystal structure and chemical states of Sb2(S,Se)3 films (a) XRD spectra; (b) Texture coefficients; (c) Raman spectra; (d-f) XPS spectra. Colorful figures are available on website

Fig. 2 FESEM images of Sb2(S,Se)3 films (a-d) Surface; (e, f) Cross-section

Fig. 3 Energy-level characterizations of Sb2(S,Se)3 films (a) UPS spectra; (b) Schematic diagram of energy levels. Colorful figures are available on website

Fig. 4 Photovoltaic properties of FSA-0 and FSA-0.1 solar cells (a-d) Statistical distributions of photovoltaic parameters; (e) Schematic diagram of the device structure; (f) Normalized PCE. Colorful figures are available on website

Fig. 5 Photovoltaic properties and defect analysis for the best devices of FSA-0 and FSA-0.1 (a) J-V curves; (b) EQE spectra; (c) Dark J-V curves; (d) EIS plots; (e) C-V curves; (f) NCV curves

Table 1 Fitting data of EIS plots for Sb2(S,Se)3 solar cells (Ω·cm−2)

Sample	R_s	R_rec	CPE
FSA-0	50.77	974.3	1.08×10⁻⁸
FSA-0.1	49.08	3147	1.44×10⁻⁹

Fig. S1 Fourier transform infrared spectra of Sb2(S,Se)3 thin films (FSA-0 and FSA-0.1) and FSA powder Partial enlargements of (b) N-H and (c) S=O characteristic peaks

Fig. S2 Crystal size distributions of Sb2(S,Se)3 films

Fig. S3 AFM images of Sb2(S,Se)3 films

Fig. S4 Optical properties of Sb2(S,Se)3 films (a) Absorption spectra; (b) Optical band gaps

Fig. S5 Photovoltaic properties of devices prepared with different concentrations of FSA (a) J-V curves; (b-e) Photovoltaic parameter statistical distribution

Fig. S6 Transient photovoltage decay of FSA-0 and FSA-0.1 solar cells measured at a bias voltage of 0 V

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Photovoltaic Performance of Sb₂(S,Se)₃ Film Enhanced by Addition of Formamidinesulfinic Acid

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